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Title: Photovoltaic structures having a light scattering interface layer and methods of making the same

Abstract

Photovoltaic (PV) cell structures having an integral light scattering interface layer configured to diffuse or scatter light prior to entering a semiconductor material and methods of making the same are described.

Inventors:
; ;
Issue Date:
Research Org.:
The University of Toledo,Toledo, OH (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1223098
Patent Number(s):
9159851
Application Number:
13/699,231
Assignee:
The University of Toledo (Toledo, OH)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
DOE Contract Number:  
FG08-GO18067
Resource Type:
Patent
Resource Relation:
Patent File Date: 2011 May 26
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY

Citation Formats

Liu, Xiangxin, Compaan, Alvin D., and Paudel, Naba Raj. Photovoltaic structures having a light scattering interface layer and methods of making the same. United States: N. p., 2015. Web.
Liu, Xiangxin, Compaan, Alvin D., & Paudel, Naba Raj. Photovoltaic structures having a light scattering interface layer and methods of making the same. United States.
Liu, Xiangxin, Compaan, Alvin D., and Paudel, Naba Raj. Tue . "Photovoltaic structures having a light scattering interface layer and methods of making the same". United States. https://www.osti.gov/servlets/purl/1223098.
@article{osti_1223098,
title = {Photovoltaic structures having a light scattering interface layer and methods of making the same},
author = {Liu, Xiangxin and Compaan, Alvin D. and Paudel, Naba Raj},
abstractNote = {Photovoltaic (PV) cell structures having an integral light scattering interface layer configured to diffuse or scatter light prior to entering a semiconductor material and methods of making the same are described.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2015},
month = {10}
}

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Works referenced in this record:

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