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Title: Technique for etching monolayer and multilayer materials

A process is disclosed for sectioning by etching of monolayers and multilayers using an RIE technique with fluorine-based chemistry. In one embodiment, the process uses Reactive Ion Etching (RIE) alone or in combination with Inductively Coupled Plasma (ICP) using fluorine-based chemistry alone and using sufficient power to provide high ion energy to increase the etching rate and to obtain deeper anisotropic etching. In a second embodiment, a process is provided for sectioning of WSi.sub.2/Si multilayers using RIE in combination with ICP using a combination of fluorine-based and chlorine-based chemistries and using RF power and ICP power. According to the second embodiment, a high level of vertical anisotropy is achieved by a ratio of three gases; namely, CHF.sub.3, Cl.sub.2, and O.sub.2 with RF and ICP. Additionally, in conjunction with the second embodiment, a passivation layer can be formed on the surface of the multilayer which aids in anisotropic profile generation.
Inventors:
; ; ;
Issue Date:
OSTI Identifier:
1222600
Assignee:
Brookhaven Science Associates, LLC (Upton, NY) BNL
Patent Number(s):
9,153,453
Application Number:
13/371,124
Contract Number:
AC02-98CH10886
Resource Relation:
Patent File Date: 2012 Feb 10
Research Org:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; 36 MATERIALS SCIENCE

Other works cited in this record:

Photoluminescence characterization of SF6-O2 plasma etching of silicon
journal, January 1996
  • Buyanova, I. A.; Henry, A.; Monemar, B.
  • Materials Science and Engineering: B, Vol. 36, Issue 1-3, p. 100-103
  • DOI: 10.1016/0921-5107(95)01286-9

Reactive etching mechanism of tungsten silicide in CF4-O2 plasma
journal, August 1984

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