Technique for etching monolayer and multilayer materials
Abstract
A process is disclosed for sectioning by etching of monolayers and multilayers using an RIE technique with fluorine-based chemistry. In one embodiment, the process uses Reactive Ion Etching (RIE) alone or in combination with Inductively Coupled Plasma (ICP) using fluorine-based chemistry alone and using sufficient power to provide high ion energy to increase the etching rate and to obtain deeper anisotropic etching. In a second embodiment, a process is provided for sectioning of WSi.sub.2/Si multilayers using RIE in combination with ICP using a combination of fluorine-based and chlorine-based chemistries and using RF power and ICP power. According to the second embodiment, a high level of vertical anisotropy is achieved by a ratio of three gases; namely, CHF.sub.3, Cl.sub.2, and O.sub.2 with RF and ICP. Additionally, in conjunction with the second embodiment, a passivation layer can be formed on the surface of the multilayer which aids in anisotropic profile generation.
- Inventors:
- Issue Date:
- Research Org.:
- Brookhaven National Laboratory (BNL), Upton, NY (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1222600
- Patent Number(s):
- 9153453
- Application Number:
- 13/371,124
- Assignee:
- Brookhaven Science Associates, LLC (Upton, NY)
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23F - NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE
- DOE Contract Number:
- AC02-98CH10886
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2012 Feb 10
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; 36 MATERIALS SCIENCE
Citation Formats
Bouet, Nathalie C. D., Conley, Raymond P., Divan, Ralu, and Macrander, Albert. Technique for etching monolayer and multilayer materials. United States: N. p., 2015.
Web.
Bouet, Nathalie C. D., Conley, Raymond P., Divan, Ralu, & Macrander, Albert. Technique for etching monolayer and multilayer materials. United States.
Bouet, Nathalie C. D., Conley, Raymond P., Divan, Ralu, and Macrander, Albert. Tue .
"Technique for etching monolayer and multilayer materials". United States. https://www.osti.gov/servlets/purl/1222600.
@article{osti_1222600,
title = {Technique for etching monolayer and multilayer materials},
author = {Bouet, Nathalie C. D. and Conley, Raymond P. and Divan, Ralu and Macrander, Albert},
abstractNote = {A process is disclosed for sectioning by etching of monolayers and multilayers using an RIE technique with fluorine-based chemistry. In one embodiment, the process uses Reactive Ion Etching (RIE) alone or in combination with Inductively Coupled Plasma (ICP) using fluorine-based chemistry alone and using sufficient power to provide high ion energy to increase the etching rate and to obtain deeper anisotropic etching. In a second embodiment, a process is provided for sectioning of WSi.sub.2/Si multilayers using RIE in combination with ICP using a combination of fluorine-based and chlorine-based chemistries and using RF power and ICP power. According to the second embodiment, a high level of vertical anisotropy is achieved by a ratio of three gases; namely, CHF.sub.3, Cl.sub.2, and O.sub.2 with RF and ICP. Additionally, in conjunction with the second embodiment, a passivation layer can be formed on the surface of the multilayer which aids in anisotropic profile generation.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2015},
month = {10}
}
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