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Title: Technique for etching monolayer and multilayer materials

Abstract

A process is disclosed for sectioning by etching of monolayers and multilayers using an RIE technique with fluorine-based chemistry. In one embodiment, the process uses Reactive Ion Etching (RIE) alone or in combination with Inductively Coupled Plasma (ICP) using fluorine-based chemistry alone and using sufficient power to provide high ion energy to increase the etching rate and to obtain deeper anisotropic etching. In a second embodiment, a process is provided for sectioning of WSi.sub.2/Si multilayers using RIE in combination with ICP using a combination of fluorine-based and chlorine-based chemistries and using RF power and ICP power. According to the second embodiment, a high level of vertical anisotropy is achieved by a ratio of three gases; namely, CHF.sub.3, Cl.sub.2, and O.sub.2 with RF and ICP. Additionally, in conjunction with the second embodiment, a passivation layer can be formed on the surface of the multilayer which aids in anisotropic profile generation.

Inventors:
; ; ;
Issue Date:
Research Org.:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1222600
Patent Number(s):
9,153,453
Application Number:
13/371,124
Assignee:
Brookhaven Science Associates, LLC (Upton, NY)
DOE Contract Number:  
AC02-98CH10886
Resource Type:
Patent
Resource Relation:
Patent File Date: 2012 Feb 10
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; 36 MATERIALS SCIENCE

Citation Formats

Bouet, Nathalie C. D., Conley, Raymond P., Divan, Ralu, and Macrander, Albert. Technique for etching monolayer and multilayer materials. United States: N. p., 2015. Web.
Bouet, Nathalie C. D., Conley, Raymond P., Divan, Ralu, & Macrander, Albert. Technique for etching monolayer and multilayer materials. United States.
Bouet, Nathalie C. D., Conley, Raymond P., Divan, Ralu, and Macrander, Albert. Tue . "Technique for etching monolayer and multilayer materials". United States. https://www.osti.gov/servlets/purl/1222600.
@article{osti_1222600,
title = {Technique for etching monolayer and multilayer materials},
author = {Bouet, Nathalie C. D. and Conley, Raymond P. and Divan, Ralu and Macrander, Albert},
abstractNote = {A process is disclosed for sectioning by etching of monolayers and multilayers using an RIE technique with fluorine-based chemistry. In one embodiment, the process uses Reactive Ion Etching (RIE) alone or in combination with Inductively Coupled Plasma (ICP) using fluorine-based chemistry alone and using sufficient power to provide high ion energy to increase the etching rate and to obtain deeper anisotropic etching. In a second embodiment, a process is provided for sectioning of WSi.sub.2/Si multilayers using RIE in combination with ICP using a combination of fluorine-based and chlorine-based chemistries and using RF power and ICP power. According to the second embodiment, a high level of vertical anisotropy is achieved by a ratio of three gases; namely, CHF.sub.3, Cl.sub.2, and O.sub.2 with RF and ICP. Additionally, in conjunction with the second embodiment, a passivation layer can be formed on the surface of the multilayer which aids in anisotropic profile generation.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2015},
month = {10}
}

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