Method of forming emitters for a back-contact solar cell

Title: Method of forming emitters for a back-contact solar cell

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Abstract

Methods of forming emitters for back-contact solar cells are described. In one embodiment, a method includes forming a first solid-state dopant source above a substrate. The first solid-state dopant source includes a plurality of regions separated by gaps. Regions of a second solid-state dopant source are formed above the substrate by printing.

Inventors:: Li, Bo; Cousins, Peter J.; Smith, David D.

Issue Date:: 2015-09-29

Research Org.:: SunPower Corporation, San Jose, CA (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1221873

Patent Number(s):: 9147795

Application Number:: 14/555,383

Assignee:: SunPower Corporation (San Jose, CA)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/022441 - {Electrode arrangements specially adapted for back-contact solar cells}
H01L31/1804 - {comprising only elements of Group IV of the Periodic System}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/547 - Monocrystalline silicon PV cells

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/1864 - {Annealing}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02P - CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
Y02P70/50 - Manufacturing or production processes characterised by the final manufactured product

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/0682 - {back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells}
H01L31/18 - Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof

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DOE Contract Number:: FC36-07GO17043

Resource Type:: Patent

Resource Relation:: Patent File Date: 2014 Nov 26

Country of Publication:: United States

Language:: English

Subject:: 14 SOLAR ENERGY

Citation Formats


                    Li, Bo, Cousins, Peter J., and Smith, David D. Method of forming emitters for a back-contact solar cell.  United States: N. p., 2015. 
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                    Li, Bo, Cousins, Peter J., & Smith, David D. Method of forming emitters for a back-contact solar cell.  United States.

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                    Li, Bo, Cousins, Peter J., and Smith, David D. Tue .  
        "Method of forming emitters for a back-contact solar cell".  United States.  https://www.osti.gov/servlets/purl/1221873.

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@article{osti_1221873,

  title        = {Method of forming emitters for a back-contact solar cell},

  author       = {Li, Bo and Cousins, Peter J. and Smith, David D.},

  abstractNote = {Methods of forming emitters for back-contact solar cells are described. In one embodiment, a method includes forming a first solid-state dopant source above a substrate. The first solid-state dopant source includes a plurality of regions separated by gaps. Regions of a second solid-state dopant source are formed above the substrate by printing.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2015},

  month        = {9}

}

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Method or forming emitters for a back-contact solar cell

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Methods of forming emitters for back-contact solar cells are described. In one embodiment, a method includes forming a first solid-state dopant source above a substrate. The first solid-state dopant source includes a plurality of regions separated by gaps. Regions of a second solid-state dopant source are formed above the substrate by printing.
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