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Title: Precise annealing of focal plane arrays for optical detection

Abstract

Precise annealing of identified defective regions of a Focal Plane Array ("FPA") (e.g., exclusive of non-defective regions of the FPA) facilitates removal of defects from an FPA that has been hybridized and/or packaged with readout electronics. Radiation is optionally applied under operating conditions, such as under cryogenic temperatures, such that performance of an FPA can be evaluated before, during, and after annealing without requiring thermal cycling.

Inventors:
Issue Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1215622
Patent Number(s):
9,142,465
Application Number:
13/956,868
Assignee:
Sandia Corporation (Albuquerque, NM) SNL-A
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Patent File Date: 2013 Aug 01
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Bender, Daniel A. Precise annealing of focal plane arrays for optical detection. United States: N. p., 2015. Web.
Bender, Daniel A. Precise annealing of focal plane arrays for optical detection. United States.
Bender, Daniel A. Tue . "Precise annealing of focal plane arrays for optical detection". United States. https://www.osti.gov/servlets/purl/1215622.
@article{osti_1215622,
title = {Precise annealing of focal plane arrays for optical detection},
author = {Bender, Daniel A.},
abstractNote = {Precise annealing of identified defective regions of a Focal Plane Array ("FPA") (e.g., exclusive of non-defective regions of the FPA) facilitates removal of defects from an FPA that has been hybridized and/or packaged with readout electronics. Radiation is optionally applied under operating conditions, such as under cryogenic temperatures, such that performance of an FPA can be evaluated before, during, and after annealing without requiring thermal cycling.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2015},
month = {9}
}

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Works referenced in this record:

Response of machining-damaged single-crystalline silicon wafers to nanosecond pulsed laser irradiation
journal, March 2007

  • Yan, Jiwang; Asami, Tooru; Kuriyagawa, Tsunemoto
  • Semiconductor Science and Technology, Vol. 22, Issue 4, p. 392-395
  • DOI: 10.1088/0268-1242/22/4/016