Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof
Abstract
In various embodiments, electronic devices containing switchably conductive silicon oxide as a switching element are described herein. The electronic devices are two-terminal devices containing a first electrical contact and a second electrical contact in which at least one of the first electrical contact or the second electrical contact is deposed on a substrate to define a gap region therebetween. A switching layer containing a switchably conductive silicon oxide resides in the gap region between the first electrical contact and the second electrical contact. The electronic devices exhibit hysteretic current versus voltage properties, enabling their use in switching and memory applications. Methods for configuring, operating and constructing the electronic devices are also presented herein.
- Inventors:
- Issue Date:
- Research Org.:
- Rice Univ., Houston, TX (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1214120
- Patent Number(s):
- 9129676
- Application Number:
- 14/050,589
- Assignee:
- William Marsh Rice University (Houston, TX)
- Patent Classifications (CPCs):
-
G - PHYSICS G11 - INFORMATION STORAGE G11C - STATIC STORES
- DOE Contract Number:
- FC36-05GO15073
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2013 Oct 10
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Citation Formats
Tour, James M., Yao, Jun, Natelson, Douglas, Zhong, Lin, and He, Tao. Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof. United States: N. p., 2015.
Web.
Tour, James M., Yao, Jun, Natelson, Douglas, Zhong, Lin, & He, Tao. Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof. United States.
Tour, James M., Yao, Jun, Natelson, Douglas, Zhong, Lin, and He, Tao. Tue .
"Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof". United States. https://www.osti.gov/servlets/purl/1214120.
@article{osti_1214120,
title = {Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof},
author = {Tour, James M. and Yao, Jun and Natelson, Douglas and Zhong, Lin and He, Tao},
abstractNote = {In various embodiments, electronic devices containing switchably conductive silicon oxide as a switching element are described herein. The electronic devices are two-terminal devices containing a first electrical contact and a second electrical contact in which at least one of the first electrical contact or the second electrical contact is deposed on a substrate to define a gap region therebetween. A switching layer containing a switchably conductive silicon oxide resides in the gap region between the first electrical contact and the second electrical contact. The electronic devices exhibit hysteretic current versus voltage properties, enabling their use in switching and memory applications. Methods for configuring, operating and constructing the electronic devices are also presented herein.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Sep 08 00:00:00 EDT 2015},
month = {Tue Sep 08 00:00:00 EDT 2015}
}
Works referenced in this record:
Quantum well structures useful for semiconductor devices
patent, June 1993
- Tsu, Raphael
- US Patent Document 5,216,262