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Title: Silicon nanocrystal inks, films, and methods

Abstract

Silicon nanocrystal inks and films, and methods of making and using silicon nanocrystal inks and films, are disclosed herein. In certain embodiments the nanocrystal inks and films include halide-terminated (e.g., chloride-terminated) and/or halide and hydrogen-terminated nanocrystals of silicon or alloys thereof. Silicon nanocrystal inks and films can be used, for example, to prepare semiconductor devices.

Inventors:
;
Issue Date:
Research Org.:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1213437
Patent Number(s):
9,123,538
Application Number:
13/870,554
Assignee:
Regents of the University of Minnesota (Minneapolis, MN)
DOE Contract Number:  
AC52-06NA25396
Resource Type:
Patent
Resource Relation:
Patent File Date: 2013 Apr 25
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY

Citation Formats

Wheeler, Lance Michael, and Kortshagen, Uwe Richard. Silicon nanocrystal inks, films, and methods. United States: N. p., 2015. Web.
Wheeler, Lance Michael, & Kortshagen, Uwe Richard. Silicon nanocrystal inks, films, and methods. United States.
Wheeler, Lance Michael, and Kortshagen, Uwe Richard. Tue . "Silicon nanocrystal inks, films, and methods". United States. https://www.osti.gov/servlets/purl/1213437.
@article{osti_1213437,
title = {Silicon nanocrystal inks, films, and methods},
author = {Wheeler, Lance Michael and Kortshagen, Uwe Richard},
abstractNote = {Silicon nanocrystal inks and films, and methods of making and using silicon nanocrystal inks and films, are disclosed herein. In certain embodiments the nanocrystal inks and films include halide-terminated (e.g., chloride-terminated) and/or halide and hydrogen-terminated nanocrystals of silicon or alloys thereof. Silicon nanocrystal inks and films can be used, for example, to prepare semiconductor devices.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2015},
month = {9}
}

Patent:

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