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Title: Silicon nanocrystal inks, films, and methods

Silicon nanocrystal inks and films, and methods of making and using silicon nanocrystal inks and films, are disclosed herein. In certain embodiments the nanocrystal inks and films include halide-terminated (e.g., chloride-terminated) and/or halide and hydrogen-terminated nanocrystals of silicon or alloys thereof. Silicon nanocrystal inks and films can be used, for example, to prepare semiconductor devices.
Inventors:
;
Issue Date:
OSTI Identifier:
1213437
Assignee:
Regents of the University of Minnesota (Minneapolis, MN) LANL
Patent Number(s):
9,123,538
Application Number:
13/870,554
Contract Number:
AC52-06NA25396
Resource Relation:
Patent File Date: 2013 Apr 25
Research Org:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY

Works referenced in this record:

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