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Title: Method for passively compensating for temperature coefficient of gain in silicon photomultipliers and similar devices

Abstract

A method for designing a completely passive bias compensation circuit to stabilize the gain of multiple pixel avalanche photo detector devices. The method includes determining circuitry design and component values to achieve a desired precision of gain stability. The method can be used with any temperature sensitive device with a nominally linear coefficient of voltage dependent parameter that must be stabilized. The circuitry design includes a negative temperature coefficient resistor in thermal contact with the photomultiplier device to provide a varying resistance and a second fixed resistor to form a voltage divider that can be chosen to set the desired slope and intercept for the characteristic with a specific voltage source value. The addition of a third resistor to the divider network provides a solution set for a set of SiPM devices that requires only a single stabilized voltage source value.

Inventors:
;
Issue Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1213435
Patent Number(s):
9,123,611
Application Number:
14/063,627
Assignee:
Jefferson Science Associates, LLC (Newport News, VA)
DOE Contract Number:  
AC05-06OR23177
Resource Type:
Patent
Resource Relation:
Patent File Date: 2013 Oct 25
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION

Citation Formats

McKisson, John E., and Barbosa, Fernando. Method for passively compensating for temperature coefficient of gain in silicon photomultipliers and similar devices. United States: N. p., 2015. Web.
McKisson, John E., & Barbosa, Fernando. Method for passively compensating for temperature coefficient of gain in silicon photomultipliers and similar devices. United States.
McKisson, John E., and Barbosa, Fernando. Tue . "Method for passively compensating for temperature coefficient of gain in silicon photomultipliers and similar devices". United States. https://www.osti.gov/servlets/purl/1213435.
@article{osti_1213435,
title = {Method for passively compensating for temperature coefficient of gain in silicon photomultipliers and similar devices},
author = {McKisson, John E. and Barbosa, Fernando},
abstractNote = {A method for designing a completely passive bias compensation circuit to stabilize the gain of multiple pixel avalanche photo detector devices. The method includes determining circuitry design and component values to achieve a desired precision of gain stability. The method can be used with any temperature sensitive device with a nominally linear coefficient of voltage dependent parameter that must be stabilized. The circuitry design includes a negative temperature coefficient resistor in thermal contact with the photomultiplier device to provide a varying resistance and a second fixed resistor to form a voltage divider that can be chosen to set the desired slope and intercept for the characteristic with a specific voltage source value. The addition of a third resistor to the divider network provides a solution set for a set of SiPM devices that requires only a single stabilized voltage source value.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2015},
month = {9}
}

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