Growth of graphene films from non-gaseous carbon sources
Abstract
In various embodiments, the present disclosure provides methods of forming graphene films by: (1) depositing a non-gaseous carbon source onto a catalyst surface; (2) exposing the non-gaseous carbon source to at least one gas with a flow rate; and (3) initiating the conversion of the non-gaseous carbon source to the graphene film, where the thickness of the graphene film is controllable by the gas flow rate. Additional embodiments of the present disclosure pertain to graphene films made in accordance with the methods of the present disclosure.
- Inventors:
- Issue Date:
- Research Org.:
- Rice Univ., Houston, TX (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1207317
- Patent Number(s):
- 9,096,437
- Application Number:
- 13/561,889
- Assignee:
- William Marsh Rice University (Houston, TX)
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2012 Jul 30
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Citation Formats
Tour, James, Sun, Zhengzong, Yan, Zheng, Ruan, Gedeng, and Peng, Zhiwei. Growth of graphene films from non-gaseous carbon sources. United States: N. p., 2015.
Web.
Tour, James, Sun, Zhengzong, Yan, Zheng, Ruan, Gedeng, & Peng, Zhiwei. Growth of graphene films from non-gaseous carbon sources. United States.
Tour, James, Sun, Zhengzong, Yan, Zheng, Ruan, Gedeng, and Peng, Zhiwei. Tue .
"Growth of graphene films from non-gaseous carbon sources". United States. https://www.osti.gov/servlets/purl/1207317.
@article{osti_1207317,
title = {Growth of graphene films from non-gaseous carbon sources},
author = {Tour, James and Sun, Zhengzong and Yan, Zheng and Ruan, Gedeng and Peng, Zhiwei},
abstractNote = {In various embodiments, the present disclosure provides methods of forming graphene films by: (1) depositing a non-gaseous carbon source onto a catalyst surface; (2) exposing the non-gaseous carbon source to at least one gas with a flow rate; and (3) initiating the conversion of the non-gaseous carbon source to the graphene film, where the thickness of the graphene film is controllable by the gas flow rate. Additional embodiments of the present disclosure pertain to graphene films made in accordance with the methods of the present disclosure.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2015},
month = {8}
}
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