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Title: Growth of graphene films from non-gaseous carbon sources

Abstract

In various embodiments, the present disclosure provides methods of forming graphene films by: (1) depositing a non-gaseous carbon source onto a catalyst surface; (2) exposing the non-gaseous carbon source to at least one gas with a flow rate; and (3) initiating the conversion of the non-gaseous carbon source to the graphene film, where the thickness of the graphene film is controllable by the gas flow rate. Additional embodiments of the present disclosure pertain to graphene films made in accordance with the methods of the present disclosure.

Inventors:
; ; ; ;
Issue Date:
Research Org.:
Rice Univ., Houston, TX (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1207317
Patent Number(s):
9096437
Application Number:
13/561,889
Assignee:
William Marsh Rice University (Houston, TX)
Patent Classifications (CPCs):
C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01B - NON-METALLIC ELEMENTS
Resource Type:
Patent
Resource Relation:
Patent File Date: 2012 Jul 30
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Tour, James, Sun, Zhengzong, Yan, Zheng, Ruan, Gedeng, and Peng, Zhiwei. Growth of graphene films from non-gaseous carbon sources. United States: N. p., 2015. Web.
Tour, James, Sun, Zhengzong, Yan, Zheng, Ruan, Gedeng, & Peng, Zhiwei. Growth of graphene films from non-gaseous carbon sources. United States.
Tour, James, Sun, Zhengzong, Yan, Zheng, Ruan, Gedeng, and Peng, Zhiwei. Tue . "Growth of graphene films from non-gaseous carbon sources". United States. https://www.osti.gov/servlets/purl/1207317.
@article{osti_1207317,
title = {Growth of graphene films from non-gaseous carbon sources},
author = {Tour, James and Sun, Zhengzong and Yan, Zheng and Ruan, Gedeng and Peng, Zhiwei},
abstractNote = {In various embodiments, the present disclosure provides methods of forming graphene films by: (1) depositing a non-gaseous carbon source onto a catalyst surface; (2) exposing the non-gaseous carbon source to at least one gas with a flow rate; and (3) initiating the conversion of the non-gaseous carbon source to the graphene film, where the thickness of the graphene film is controllable by the gas flow rate. Additional embodiments of the present disclosure pertain to graphene films made in accordance with the methods of the present disclosure.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2015},
month = {8}
}

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