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Title: High-resolution parallel-detection sensor array using piezo-phototronics effect

Abstract

A pressure sensor element includes a substrate, a first type of semiconductor material layer and an array of elongated light-emitting piezoelectric nanostructures extending upwardly from the first type of semiconductor material layer. A p-n junction is formed between each nanostructure and the first type semiconductor layer. An insulative resilient medium layer is infused around each of the elongated light-emitting piezoelectric nanostructures. A transparent planar electrode, disposed on the resilient medium layer, is electrically coupled to the top of each nanostructure. A voltage source is coupled to the first type of semiconductor material layer and the transparent planar electrode and applies a biasing voltage across each of the nanostructures. Each nanostructure emits light in an intensity that is proportional to an amount of compressive strain applied thereto.

Inventors:
;
Issue Date:
Research Org.:
Georgia Tech Research Corporation, Atlanta, GA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1202316
Patent Number(s):
9,093,355
Application Number:
13/748,737
Assignee:
Georgia Tech Research Corporation (Atlanta, GA)
DOE Contract Number:  
FG02-07ER46394
Resource Type:
Patent
Resource Relation:
Patent File Date: 2013 Jan 24
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; 77 NANOSCIENCE AND NANOTECHNOLOGY

Citation Formats

Wang, Zhong L., and Pan, Caofeng. High-resolution parallel-detection sensor array using piezo-phototronics effect. United States: N. p., 2015. Web.
Wang, Zhong L., & Pan, Caofeng. High-resolution parallel-detection sensor array using piezo-phototronics effect. United States.
Wang, Zhong L., and Pan, Caofeng. Tue . "High-resolution parallel-detection sensor array using piezo-phototronics effect". United States. https://www.osti.gov/servlets/purl/1202316.
@article{osti_1202316,
title = {High-resolution parallel-detection sensor array using piezo-phototronics effect},
author = {Wang, Zhong L. and Pan, Caofeng},
abstractNote = {A pressure sensor element includes a substrate, a first type of semiconductor material layer and an array of elongated light-emitting piezoelectric nanostructures extending upwardly from the first type of semiconductor material layer. A p-n junction is formed between each nanostructure and the first type semiconductor layer. An insulative resilient medium layer is infused around each of the elongated light-emitting piezoelectric nanostructures. A transparent planar electrode, disposed on the resilient medium layer, is electrically coupled to the top of each nanostructure. A voltage source is coupled to the first type of semiconductor material layer and the transparent planar electrode and applies a biasing voltage across each of the nanostructures. Each nanostructure emits light in an intensity that is proportional to an amount of compressive strain applied thereto.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2015},
month = {7}
}

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