Global to push GA events into
skip to main content

Title: Electrically tunable infrared metamaterial devices

A wavelength-tunable, depletion-type infrared metamaterial optical device is provided. The device includes a thin, highly doped epilayer whose electrical permittivity can become negative at some infrared wavelengths. This highly-doped buried layer optically couples with a metamaterial layer. Changes in the transmission spectrum of the device can be induced via the electrical control of this optical coupling. An embodiment includes a contact layer of semiconductor material that is sufficiently doped for operation as a contact layer and that is effectively transparent to an operating range of infrared wavelengths, a thin, highly doped buried layer of epitaxially grown semiconductor material that overlies the contact layer, and a metallized layer overlying the buried layer and patterned as a resonant metamaterial.
Inventors:
;
Issue Date:
OSTI Identifier:
1195934
Assignee:
Sandia Corporation (Albuquerque, NM) SSO
Patent Number(s):
9,086,510
Application Number:
13/908,826
Contract Number:
AC04-94AL85000
Resource Relation:
Patent File Date: 2013 Jun 03
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS

Other works cited in this record:

Novel high-speed integrated heterostructure transistors, photodetectors, and optoelectronic circuits
patent, February 1990

Berreman mode and epsilon near zero mode
journal, January 2012
  • Vassant, Simon; Hugonin, Jean-Paul; Marquier, Francois
  • Optics Express, Vol. 20, Issue 21, p. 23971-23977
  • DOI: 10.1364/OE.20.023971

Epsilon-Near-Zero Mode for Active Optoelectronic Devices
journal, December 2012

Similar records in DOepatents and OSTI.GOV collections: