Integrated avalanche photodiode arrays
Abstract
The present disclosure includes devices for detecting photons, including avalanche photon detectors, arrays of such detectors, and circuits including such arrays. In some aspects, the detectors and arrays include a virtual beveled edge mesa structure surrounded by resistive material damaged by ion implantation and having side wall profiles that taper inwardly towards the top of the mesa structures, or towards the direction from which the ion implantation occurred. Other aspects are directed to masking and multiple implantation and/or annealing steps. Furthermore, methods for fabricating and using such devices, circuits and arrays are disclosed.
- Inventors:
- Issue Date:
- Research Org.:
- LightSpin Technologies, Inc., Endicott, NY (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1190911
- Patent Number(s):
- 9076707
- Application Number:
- 14/257,179
- Assignee:
- LightSpin Technologies, Inc. (Endicott, NY)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- SC0009538
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2014 Apr 21
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 36 MATERIALS SCIENCE
Citation Formats
Harmon, Eric S. Integrated avalanche photodiode arrays. United States: N. p., 2015.
Web.
Harmon, Eric S. Integrated avalanche photodiode arrays. United States.
Harmon, Eric S. Tue .
"Integrated avalanche photodiode arrays". United States. https://www.osti.gov/servlets/purl/1190911.
@article{osti_1190911,
title = {Integrated avalanche photodiode arrays},
author = {Harmon, Eric S.},
abstractNote = {The present disclosure includes devices for detecting photons, including avalanche photon detectors, arrays of such detectors, and circuits including such arrays. In some aspects, the detectors and arrays include a virtual beveled edge mesa structure surrounded by resistive material damaged by ion implantation and having side wall profiles that taper inwardly towards the top of the mesa structures, or towards the direction from which the ion implantation occurred. Other aspects are directed to masking and multiple implantation and/or annealing steps. Furthermore, methods for fabricating and using such devices, circuits and arrays are disclosed.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2015},
month = {7}
}
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Works referenced in this record:
Mesa-structure avalanche photodiode having a buried epitaxial junction
patent, February 1999
- Hasnain, Ghulam; Hollenhorst, James N.; Su, Chung-Yi
- US Patent Document 5,866,936