Title: Solid state cloaking for electrical charge carrier mobility control

Abstract

An electrical mobility-controlled material includes a solid state host material having a controllable Fermi energy level and electrical charge carriers with a charge carrier mobility. At least one Fermi level energy at which a peak in charge carrier mobility is to occur is prespecified for the host material. A plurality of particles are distributed in the host material, with at least one particle disposed with an effective mass and a radius that minimize scattering of the electrical charge carriers for the at least one prespecified Fermi level energy of peak charge carrier mobility. The minimized scattering of electrical charge carriers produces the peak charge carrier mobility only at the at least one prespecified Fermi level energy, set by the particle effective mass and radius, the charge carrier mobility being less than the peak charge carrier mobility at Fermi level energies other than the at least one prespecified Fermi level energy.

Inventors:

Zebarjadi, Mona; Liao, Bolin; Esfarjani, Keivan; Chen, Gang

Issue Date:

2015-07-07

Research Org.:

Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1190910

Patent Number(s):

9076712

Application Number:

14/017,421

Assignee:

Massachusetts Institute of Technology (Cambridge, MA)

Patent Classifications (CPCs):

B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

B82Y10/00 - Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L29/1075 - {of field-effect transistors}
H01L29/122 - {Single quantum well structures
H01L29/158 - {Structures without potential periodicity in a direction perpendicular to a major surface of the substrate, i.e. vertical direction, e.g. lateral superlattices, lateral surface superlattices [LSS]}
H01L29/1606 - {Graphene}
H01L29/66977 - {Quantum effect devices, e.g. using quantum reflection, diffraction or interference effects, i.e. Bragg- or Aharonov-Bohm effects}
H01L29/7727 - {Velocity modulation transistors, i.e. VMT}
H01L29/7786 - {with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT}

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DOE Contract Number:  

FG02-09ER46577

Resource Type:

Patent

Resource Relation:

Patent File Date: 2013 Sep 04

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS