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Title: Boron, bismuth co-doping of gallium arsenide and other compounds for photonic and heterojunction bipolar transistor devices

Isoelectronic co-doping of semiconductor compounds and alloys with acceptors and deep donors is sued to decrease bandgap, to increase concentration of the dopant constituents in the resulting alloys, and to increase carrier mobilities lifetimes. For example, Group III-V compounds and alloys, such as GaAs and GaP, are isoelectronically co-doped with, for example, B and Bi, to customize solar cells, and other semiconductor devices. Isoelectronically co-doped Group II-VI compounds and alloys are also included.
Inventors:
Issue Date:
OSTI Identifier:
1190904
Assignee:
Alliance for Sustainable Energy, LLC (Golden, CO) NREL
Patent Number(s):
9,076,915
Application Number:
13/877,092
Contract Number:
AC36-08GO28308
Resource Relation:
Patent File Date: 2011 Mar 08
Research Org:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 14 SOLAR ENERGY

Works referenced in this record:

High p‐type conductivity in cubic GaN/GaAs(113) A by using Be as the acceptor and O as the codopant
journal, October 1996
  • Brandt, Oliver; Yang, Hui; Kostial, Helmar
  • Applied Physics Letters, Vol. 69, Issue 18, p. 2707-2709
  • DOI: 10.1063/1.117685

Effect of Bi alloying on the hole transport in the dilute bismide alloy GaAs 1 x Bi x
journal, February 2011

Extremely large N content (up to 10%) in GaNAs grown by gas-source molecular beam epitaxy
journal, July 1996

Molecular doping of gallium nitride
journal, January 1999
  • Pankove, J. I.; Torvik, J. T.; Qiu, C.-H.
  • Applied Physics Letters, Vol. 74, Issue 3, p. 416-418
  • DOI: 10.1063/1.123046

Doping of group III nitrides
journal, May 1998
  • Ploog, Klaus H.; Brandt, Oliver
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 16, Issue 3, p. 1609-1614
  • DOI: 10.1116/1.581128

Isoelectronic Traps Due to Nitrogen in Gallium Phosphide
journal, October 1966

Ion‐beam synthesis and stability of GaAs nanocrystals in silicon
journal, April 1996
  • White, C. W.; Budai, J. D.; Zhu, J. G.
  • Applied Physics Letters, Vol. 68, Issue 17, p. 2389-2391
  • DOI: 10.1063/1.116143