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Title: Boron, bismuth co-doping of gallium arsenide and other compounds for photonic and heterojunction bipolar transistor devices

Abstract

Isoelectronic co-doping of semiconductor compounds and alloys with acceptors and deep donors is sued to decrease bandgap, to increase concentration of the dopant constituents in the resulting alloys, and to increase carrier mobilities lifetimes. For example, Group III-V compounds and alloys, such as GaAs and GaP, are isoelectronically co-doped with, for example, B and Bi, to customize solar cells, and other semiconductor devices. Isoelectronically co-doped Group II-VI compounds and alloys are also included.

Inventors:
Issue Date:
Research Org.:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1190904
Patent Number(s):
9076915
Application Number:
13/877,092
Assignee:
Alliance for Sustainable Energy, LLC (Golden, CO)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
DOE Contract Number:  
AC36-08GO28308
Resource Type:
Patent
Resource Relation:
Patent File Date: 2011 Mar 08
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 14 SOLAR ENERGY

Citation Formats

Mascarenhas, Angelo. Boron, bismuth co-doping of gallium arsenide and other compounds for photonic and heterojunction bipolar transistor devices. United States: N. p., 2015. Web.
Mascarenhas, Angelo. Boron, bismuth co-doping of gallium arsenide and other compounds for photonic and heterojunction bipolar transistor devices. United States.
Mascarenhas, Angelo. Tue . "Boron, bismuth co-doping of gallium arsenide and other compounds for photonic and heterojunction bipolar transistor devices". United States. https://www.osti.gov/servlets/purl/1190904.
@article{osti_1190904,
title = {Boron, bismuth co-doping of gallium arsenide and other compounds for photonic and heterojunction bipolar transistor devices},
author = {Mascarenhas, Angelo},
abstractNote = {Isoelectronic co-doping of semiconductor compounds and alloys with acceptors and deep donors is sued to decrease bandgap, to increase concentration of the dopant constituents in the resulting alloys, and to increase carrier mobilities lifetimes. For example, Group III-V compounds and alloys, such as GaAs and GaP, are isoelectronically co-doped with, for example, B and Bi, to customize solar cells, and other semiconductor devices. Isoelectronically co-doped Group II-VI compounds and alloys are also included.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2015},
month = {7}
}

Works referenced in this record:

Excimer-pumped four level blue-green solid state laser
patent, August 1981


Solar cells based on indium phosphide
patent, May 1986


Method of growing p-type group II-VI material
patent, July 1991


Precursor for semiconductor thin films and method for producing semiconductor thin films
patent, March 1998


Method of fabricating opto-electronic device
patent, July 1998


Semiconductor light-emitting device and production method thereof
patent, April 1999


High-efficiency solar cell and method for fabrication
patent, August 1999


Quantum-dot cascade laser
patent, October 1999


Rigid thin windows for vacuum applications
patent, December 1999


Isoelectronic co-doping
patent, November 2004


Bipolar transistors with low parasitic losses
patent, May 2008


Isoelectronic co-doping
patent-application, August 2002


Semiconductor device and manufacturing method of the same
patent-application, March 2004


Semiconductor device
patent-application, December 2005


High p‐type conductivity in cubic GaN/GaAs(113) A by using Be as the acceptor and O as the codopant
journal, October 1996


Effect of Bi alloying on the hole transport in the dilute bismide alloy GaAs 1 x Bi x
journal, February 2011


Extremely large N content (up to 10%) in GaNAs grown by gas-source molecular beam epitaxy
journal, July 1996


Electronic structure and phase stability of GaAs 1 x N x alloys
journal, April 1995


Carbon and Indium Codoping in GaAs for Reliable AlGaAs/GaAs Heterojunction Bipolar Transistors
journal, November 1994


New Semiconductor Alloy GaAs1-xBix Grown by Metal Organic Vapor Phase Epitaxy
journal, November 1998


Molecular doping of gallium nitride
journal, January 1999


Doping of group III nitrides
journal, May 1998

  • Ploog, Klaus H.; Brandt, Oliver
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 16, Issue 3, p. 1609-1614
  • https://doi.org/10.1116/1.581128

Luminescence due to the Isoelectronic Substitution of Bismuth for Phosphorus in Gallium Phosphide
journal, July 1966


Ion‐beam synthesis and stability of GaAs nanocrystals in silicon
journal, April 1996


Role of Cl or I Codoping in Li-Doping Enhancement in ZnSe
journal, August 1998


Solution Using a Codoping Method to Unipolarity for the Fabrication of p-Type ZnO
journal, February 1999