Boron, bismuth co-doping of gallium arsenide and other compounds for photonic and heterojunction bipolar transistor devices
Abstract
Isoelectronic co-doping of semiconductor compounds and alloys with acceptors and deep donors is sued to decrease bandgap, to increase concentration of the dopant constituents in the resulting alloys, and to increase carrier mobilities lifetimes. For example, Group III-V compounds and alloys, such as GaAs and GaP, are isoelectronically co-doped with, for example, B and Bi, to customize solar cells, and other semiconductor devices. Isoelectronically co-doped Group II-VI compounds and alloys are also included.
- Inventors:
- Issue Date:
- Research Org.:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1190904
- Patent Number(s):
- 9076915
- Application Number:
- 13/877,092
- Assignee:
- Alliance for Sustainable Energy, LLC (Golden, CO)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- AC36-08GO28308
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2011 Mar 08
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 14 SOLAR ENERGY
Citation Formats
Mascarenhas, Angelo. Boron, bismuth co-doping of gallium arsenide and other compounds for photonic and heterojunction bipolar transistor devices. United States: N. p., 2015.
Web.
Mascarenhas, Angelo. Boron, bismuth co-doping of gallium arsenide and other compounds for photonic and heterojunction bipolar transistor devices. United States.
Mascarenhas, Angelo. Tue .
"Boron, bismuth co-doping of gallium arsenide and other compounds for photonic and heterojunction bipolar transistor devices". United States. https://www.osti.gov/servlets/purl/1190904.
@article{osti_1190904,
title = {Boron, bismuth co-doping of gallium arsenide and other compounds for photonic and heterojunction bipolar transistor devices},
author = {Mascarenhas, Angelo},
abstractNote = {Isoelectronic co-doping of semiconductor compounds and alloys with acceptors and deep donors is sued to decrease bandgap, to increase concentration of the dopant constituents in the resulting alloys, and to increase carrier mobilities lifetimes. For example, Group III-V compounds and alloys, such as GaAs and GaP, are isoelectronically co-doped with, for example, B and Bi, to customize solar cells, and other semiconductor devices. Isoelectronically co-doped Group II-VI compounds and alloys are also included.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2015},
month = {7}
}
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.
Works referenced in this record:
Excimer-pumped four level blue-green solid state laser
patent, August 1981
- Esterowitz, Leon; Allen, Roger E.; Kruer, Melvin R.
- US Patent Document 4,284,962
Fabrication of gallium arsenide-germanium heteroface junction device
patent, August 1983
- Rahilly, W. Patrick
- US Patent Document 4,400,221
Solar cells based on indium phosphide
patent, May 1986
- Yamaguchi, Masafumi; Yamamoto, Akio; Uemura, Chikao
- US Patent Document 4,591,654
Method of diffusing plurality of dopants simultaneously from vapor phase into semiconductor substrate
patent, July 1990
- Szolgyemy, Laszlo
- US Patent Document 4,939,103
Method of growing p-type group II-VI material
patent, July 1991
- Kamath, G. Sanjiv; Wu, Owen K.
- US Patent Document 5,028,561
Process of making strain-free, carbon-doped epitaxial layers and products so made
patent, May 1992
- Daly, James T.
- US Patent Document 5,116,455
Method for fabricating group III-V heterostructure devices having self-aligned graded contact diffusion regions
patent, October 1992
- Burroughes, Jeremy; Milshtein, Mark S.; Tischler, Michael A.
- US Patent Document 5,158,896
GaAs device having a strain-free c-doped layer
patent, July 1993
- Daly, James T.
- US Patent Document 5,231,298
Diffusion control of p-n junction location in multilayer heterostructure light emitting devices
patent, September 1994
- Huang, Kuo-Hsin
- US Patent Document 5,344,791
Method of making a semiconductor device including carbon as a dopant
patent, February 1995
- Hayafuji, Norio
- US Patent Document 5,387,544
Semiconductor arrangement made of compound semiconductor material
patent, June 1995
- Beneking, Heinz
- US Patent Document 5,422,731
Method for making an interconnection structure for integrated circuits
patent, September 1995
- Leedy, Glenn J.
- US Patent Document 5,453,404
Precursor for semiconductor thin films and method for producing semiconductor thin films
patent, March 1998
- Negami, Takayuki; Terauchi, Masaharu; Nishitani, Mikihiko
- US Patent Document 5,728,231
Method of fabricating opto-electronic device
patent, July 1998
- Lee, Ming-Kwei; Yeh, Min-Yen
- US Patent Document 5,776,793
Semiconductor light-emitting device and production method thereof
patent, April 1999
- Kidoguchi, Isao; Adachi, Hideto; Ishibashi, Akihiko
- US Patent Document 5,895,225
High-efficiency solar cell and method for fabrication
patent, August 1999
- Hou, Hong Q.; Reinhardt, Kitt
- US Patent Document 5,944,913
Epitaxial wafer for a light-emitting diode and a light-emitting diode
patent, November 1999
- Hasegawa, Koichi
- US Patent Document 5,986,288
Rigid thin windows for vacuum applications
patent, December 1999
- Meyer, Glenn A.; Ciarlo, Dino R.; Myers, Booth R.
- US Patent Document 6,002,202
Doped semiconductor material, a method of manufacturing the doped semiconductor material, and a semiconductor device
patent, July 2002
- Kean, Alistair; Takiguchi, Haruhisa
- US Patent Document 6,426,522
Doped semiconductor material, a method of manufacturing the doped semiconductor material, and a semiconductor device
patent, November 2003
- Kean, Alistair; Takiguchi, Haruhisa
- US Patent Document 6,653,248
Heterojunction bipolar transistor with a base layer that contains bismuth
patent, August 2005
- Hase, Ichiro
- US Patent Document 6,936,871
Heterojunction bipolar transistor with a base layer that contains bismuth
patent, March 2006
- Hase, Ichiro
- US Patent Document 7,009,225
Heterojunction bipolar transistor with a base layer that contains bismuth
patent, June 2006
- Hase, Ichiro
- US Patent Document 7,067,858
GaP/silicon tandem solar cell with extended temperature range
patent, December 2006
- Landis, Geoffrey A.
- US Patent Document 7,148,417
Bipolar transistors with low parasitic losses
patent, May 2008
- Rajavel, Rajesh D.; Chow, David H.; Hussain, Tahir
- US Patent Document 7,368,765
Isoelectronic co-doping
patent-application, August 2002
- Mascarenhas, Angelo
- US Patent Application 09/841691; 20020117675
Semiconductor device and manufacturing method of the same
patent-application, March 2004
- Yamauchi, Jun; Aoki, Nobutoshi
- US Patent Application 10/609392; 20040056283
Semiconductor device
patent-application, December 2005
- Hase, Ichiro
- US Patent Application 11/194600; 20050263792
High p‐type conductivity in cubic GaN/GaAs(113) A by using Be as the acceptor and O as the codopant
journal, October 1996
- Brandt, Oliver; Yang, Hui; Kostial, Helmar
- Applied Physics Letters, Vol. 69, Issue 18, p. 2707-2709
Effect of Bi alloying on the hole transport in the dilute bismide alloy GaAsBi
journal, February 2011
- Kini, R. N.; Ptak, A. J.; Fluegel, B.
- Physical Review B, Vol. 83, Issue 7, Article No. 075307
Extremely large N content (up to 10%) in GaNAs grown by gas-source molecular beam epitaxy
journal, July 1996
- Kondow, M.; Uomi, K.; Kitatani, T.
- Journal of Crystal Growth, Vol. 164, Issue 1-4, p. 175-179
Electronic structure and phase stability of alloys
journal, April 1995
- Neugebauer, Jörg; Van de Walle, Chris G.
- Physical Review B, Vol. 51, Issue 16
Carbon and Indium Codoping in GaAs for Reliable AlGaAs/GaAs Heterojunction Bipolar Transistors
journal, November 1994
- Nittono, Takumi; Watanabe, Noriyuki; Ito, Hiroshi
- Japanese Journal of Applied Physics, Vol. 33, Issue Part 1, No. 11
New Semiconductor Alloy GaAs1-xBix Grown by Metal Organic Vapor Phase Epitaxy
journal, November 1998
- Oe, Kunishige; Okamoto, Hiroshi
- Japanese Journal of Applied Physics, Vol. 37, Issue Part 2, No. 11A
Molecular doping of gallium nitride
journal, January 1999
- Pankove, J. I.; Torvik, J. T.; Qiu, C.-H.
- Applied Physics Letters, Vol. 74, Issue 3, p. 416-418
Doping of group III nitrides
journal, May 1998
- Ploog, Klaus H.; Brandt, Oliver
- Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 16, Issue 3, p. 1609-1614
Luminescence due to the Isoelectronic Substitution of Bismuth for Phosphorus in Gallium Phosphide
journal, July 1966
- Trumbore, F. A.; Gershenzon, M.; Thomas, D. G.
- Applied Physics Letters, Vol. 9, Issue 1
Ion‐beam synthesis and stability of GaAs nanocrystals in silicon
journal, April 1996
- White, C. W.; Budai, J. D.; Zhu, J. G.
- Applied Physics Letters, Vol. 68, Issue 17, p. 2389-2391
Role of Cl or I Codoping in Li-Doping Enhancement in ZnSe
journal, August 1998
- Yamamoto, Tetsuya; Katayama, Hiroshi
- Japanese Journal of Applied Physics, Vol. 37, Issue Part 2, No. 8A
Solution Using a Codoping Method to Unipolarity for the Fabrication of p-Type ZnO
journal, February 1999
- Yamamoto, Tetsuya; Katayama, Hiroshi
- Japanese Journal of Applied Physics, Vol. 38, Issue Part 2, No. 2B