Asymmetrical field emitter
A method is disclosed for providing a field emitter with an asymmetrical emitter structure having a very sharp tip in close proximity to its gate. One preferred embodiment of the present invention includes an asymmetrical emitter and a gate. The emitter having a tip and a side is coupled to a substrate. The gate is connected to a step in the substrate. The step has a top surface and a side wall that is substantially parallel to the side of the emitter. The tip of the emitter is in close proximity to the gate. The emitter is at an emitter potential, and the gate is at a gate potential such that with the two potentials at appropriate values, electrons are emitted from the emitter. In one embodiment, the gate is separated from the emitter by an oxide layer, and the emitter is etched anisotropically to form its tip and its asymmetrical structure. 17 figs.
- Issue Date:
- OSTI Identifier:
- 119058
- Assignee:
- Sandia Corp., Albuquerque, NM (United States) SNL; SCA: 426000; PA: EDB-95:150261; SN: 95001477082
- Patent Number(s):
- US 5,457,355/A/
- Application Number:
- PAN: 8-160,705
- Contract Number:
- AC04-76DP00789
- Resource Relation:
- Other Information: PBD: 10 Oct 1995
- Research Org:
- AT&T Corporation
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; ELECTRONIC CIRCUITS; DESIGN; FIELD EMISSION; ANISOTROPY; ELECTRON SOURCES; GATING CIRCUITS