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Title: Processing of insulators and semiconductors

Abstract

A method is disclosed for processing an insulator material or a semiconductor material. The method includes pulsing a plasma lamp onto the material to diffuse a doping substance into the material, to activate the doping substance in the material or to metallize a large area region of the material. The method may further include pulsing a laser onto a selected region of the material to diffuse a doping substance into the material, to activate the doping substance in the material or to metallize a selected region of the material.

Inventors:
; ; ; ;
Issue Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1184555
Patent Number(s):
9059079
Application Number:
14/036,925
Assignee:
UT-Battelle, LLC (Oak Ridge, TN)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
DOE Contract Number:  
AC05-00OR22725
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
70 PLASMA PHYSICS AND FUSION TECHNOLOGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 36 MATERIALS SCIENCE

Citation Formats

Quick, Nathaniel R., Joshi, Pooran C., Duty, Chad Edward, Jellison, Jr., Gerald Earle, and Angelini, Joseph Attilio. Processing of insulators and semiconductors. United States: N. p., 2015. Web.
Quick, Nathaniel R., Joshi, Pooran C., Duty, Chad Edward, Jellison, Jr., Gerald Earle, & Angelini, Joseph Attilio. Processing of insulators and semiconductors. United States.
Quick, Nathaniel R., Joshi, Pooran C., Duty, Chad Edward, Jellison, Jr., Gerald Earle, and Angelini, Joseph Attilio. Tue . "Processing of insulators and semiconductors". United States. https://www.osti.gov/servlets/purl/1184555.
@article{osti_1184555,
title = {Processing of insulators and semiconductors},
author = {Quick, Nathaniel R. and Joshi, Pooran C. and Duty, Chad Edward and Jellison, Jr., Gerald Earle and Angelini, Joseph Attilio},
abstractNote = {A method is disclosed for processing an insulator material or a semiconductor material. The method includes pulsing a plasma lamp onto the material to diffuse a doping substance into the material, to activate the doping substance in the material or to metallize a large area region of the material. The method may further include pulsing a laser onto a selected region of the material to diffuse a doping substance into the material, to activate the doping substance in the material or to metallize a selected region of the material.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2015},
month = {6}
}

Works referenced in this record:

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Laser doping of silicon carbide substrates
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Effects of different laser sources and doping methods used to dope silicon carbide
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conference, March 2009

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Laser-enhanced diffusion of nitrogen and aluminum dopants in silicon carbide
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Laser Direct Write Doping and Metallization Fabrication of Silicon Carbide PIN Diodes
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SiC-based optical interferometry at high pressures and temperatures for pressure and chemical sensing
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Modelling of microvia drilling with a Nd : YAG laser
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Laser Endotaxy and PIN Diode Fabrication of Silicon Carbide
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Laser Doping of Chromium and Selenium in p-Type 4H-SiC
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Effect of laser field and thermal stress on diffusion in laser doping of SiC
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Laser-doping of silicon carbide for p-n junction and LED fabrication
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Temperature-dependent optical properties of silicon carbide for wireless temperature sensors
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Determination of Thermophysical Properties for Polymer Films using Conduction Analysis of Laser Heating
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Laser doping of chromium in 6H-SiC for white light emitting diodes
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Laser endotaxy in silicon carbide and PIN diode fabrication
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Laser direct write doping of wide-bandgap semiconductor materials
conference, January 2004


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conference, March 2003

  • Salama, Islam A.; Quick, N. R.; Kar, Aravinda
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Laser direct write doping of wide-bandgap semiconductor materials
conference, January 2004


Laser Doping of Chromium and Selenium in p-Type 4H-SiC
journal, September 2008


Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC
journal, May 2006


Effects of different laser sources and doping methods used to dope silicon carbide
journal, May 2005


Laser-enhanced diffusion of nitrogen and aluminum dopants in silicon carbide
journal, September 2006