Processing of insulators and semiconductors
Abstract
A method is disclosed for processing an insulator material or a semiconductor material. The method includes pulsing a plasma lamp onto the material to diffuse a doping substance into the material, to activate the doping substance in the material or to metallize a large area region of the material. The method may further include pulsing a laser onto a selected region of the material to diffuse a doping substance into the material, to activate the doping substance in the material or to metallize a selected region of the material.
- Inventors:
- Issue Date:
- Research Org.:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1184555
- Patent Number(s):
- 9059079
- Application Number:
- 14/036,925
- Assignee:
- UT-Battelle, LLC (Oak Ridge, TN)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- AC05-00OR22725
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 70 PLASMA PHYSICS AND FUSION TECHNOLOGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 36 MATERIALS SCIENCE
Citation Formats
Quick, Nathaniel R., Joshi, Pooran C., Duty, Chad Edward, Jellison, Jr., Gerald Earle, and Angelini, Joseph Attilio. Processing of insulators and semiconductors. United States: N. p., 2015.
Web.
Quick, Nathaniel R., Joshi, Pooran C., Duty, Chad Edward, Jellison, Jr., Gerald Earle, & Angelini, Joseph Attilio. Processing of insulators and semiconductors. United States.
Quick, Nathaniel R., Joshi, Pooran C., Duty, Chad Edward, Jellison, Jr., Gerald Earle, and Angelini, Joseph Attilio. Tue .
"Processing of insulators and semiconductors". United States. https://www.osti.gov/servlets/purl/1184555.
@article{osti_1184555,
title = {Processing of insulators and semiconductors},
author = {Quick, Nathaniel R. and Joshi, Pooran C. and Duty, Chad Edward and Jellison, Jr., Gerald Earle and Angelini, Joseph Attilio},
abstractNote = {A method is disclosed for processing an insulator material or a semiconductor material. The method includes pulsing a plasma lamp onto the material to diffuse a doping substance into the material, to activate the doping substance in the material or to metallize a large area region of the material. The method may further include pulsing a laser onto a selected region of the material to diffuse a doping substance into the material, to activate the doping substance in the material or to metallize a selected region of the material.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2015},
month = {6}
}
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Microstructural and electrical resistance analysis of laser-processed SiC substrates for wide bandgap semiconductor materials
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Laser direct writing and doping of diamond-like carbon, polycrystalline diamond, and single crystal silicon carbide
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Laser Direct Write and Gas Immersion Laser Doping Fabrication of SiC Diodes
journal, January 2004
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Effects of different laser sources and doping methods used to dope silicon carbide
journal, May 2005
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Characteristics of 6H-silicon carbide PIN diodes prototyping by laser doping
journal, April 2005
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- Journal of Electronic Materials, Vol. 34, Issue 4
CO2 Laser Drilling of Microvias Using Diffractive Optics Techniques: I — Mathematical Modeling
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- ASME 2005 Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems collocated with the ASME 2005 Heat Transfer Summer Conference, Advances in Electronic Packaging, Parts A, B, and C
Laser-enhanced diffusion of nitrogen and aluminum dopants in silicon carbide
journal, September 2006
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Laser Direct Write Doping and Metallization Fabrication of Silicon Carbide PIN Diodes
journal, October 2006
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journal, May 2006
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Modelling of microvia drilling with a Nd : YAG laser
journal, August 2006
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Laser Endotaxy and PIN Diode Fabrication of Silicon Carbide
journal, January 2006
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Laser Doping of Chromium and Selenium in p-Type 4H-SiC
journal, September 2008
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Effect of laser field and thermal stress on diffusion in laser doping of SiC
journal, December 2007
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- Acta Materialia, Vol. 55, Issue 20, p. 6816-6824
Laser-doping of silicon carbide for p-n junction and LED fabrication
journal, April 2007
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- physica status solidi (a), Vol. 204, Issue 4
Temperature-dependent optical properties of silicon carbide for wireless temperature sensors
journal, January 2007
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- Journal of Physics D: Applied Physics, Vol. 40, Issue 2
Determination of Thermophysical Properties for Polymer Films using Conduction Analysis of Laser Heating
journal, June 2007
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Laser doping of chromium in 6H-SiC for white light emitting diodes
journal, February 2008
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- Journal of Laser Applications, Vol. 20, Issue 1
Laser endotaxy in silicon carbide and PIN diode fabrication
journal, May 2008
- Tian, Z.; Quick, N. R.; Kar, A.
- Journal of Laser Applications, Vol. 20, Issue 2
Laser direct write doping of wide-bandgap semiconductor materials
conference, January 2004
- Salama, I. A.; Quick, N. R.; Kar, A.
- 2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings (IEEE Cat. No.03TH8767)
Laser microprocessing of wide bandgap materials
conference, March 2003
- Salama, Islam A.; Quick, N. R.; Kar, Aravinda
- LAMP 2002: International Congress on Laser Advanced Materials Processing, SPIE Proceedings
Laser direct write doping of wide-bandgap semiconductor materials
conference, January 2004
- Salama, I. A.; Quick, N. R.; Kar, A.
- 2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings (IEEE Cat. No.03TH8767)
Laser Doping of Chromium and Selenium in p-Type 4H-SiC
journal, September 2008
- Bet, S.; Quick, N. R.; Kar, Aravinda
- Materials Science Forum, Vol. 600-603
Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC
journal, May 2006
- Kamiyama, S.; Maeda, T.; Nakamura, Y.
- Journal of Applied Physics, Vol. 99, Issue 9
Effects of different laser sources and doping methods used to dope silicon carbide
journal, May 2005
- Tian, Z.; Salama, I. A.; Quick, N. R.
- Acta Materialia, Vol. 53, Issue 9, p. 2835-2844
Laser-enhanced diffusion of nitrogen and aluminum dopants in silicon carbide
journal, September 2006
- Tian, Z.; Quick, N. R.; Kar, A.
- Acta Materialia, Vol. 54, Issue 16, p. 4273-4283