Laterally injected light-emitting diode and laser diode
Abstract
A p-type superlattice is used to laterally inject holes into an III-nitride multiple quantum well active layer, enabling efficient light extraction from the active area. Laterally-injected light-emitting diodes and laser diodes can enable brighter, more efficient devices that impact a wide range of wavelengths and applications. For UV wavelengths, applications include fluorescence-based biological sensing, epoxy curing, and water purification. For visible devices, applications include solid state lighting and projection systems.
- Inventors:
- Issue Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1184533
- Patent Number(s):
- 9059356
- Application Number:
- 14/549,233
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Miller, Mary A., Crawford, Mary H., and Allerman, Andrew A. Laterally injected light-emitting diode and laser diode. United States: N. p., 2015.
Web.
Miller, Mary A., Crawford, Mary H., & Allerman, Andrew A. Laterally injected light-emitting diode and laser diode. United States.
Miller, Mary A., Crawford, Mary H., and Allerman, Andrew A. Tue .
"Laterally injected light-emitting diode and laser diode". United States. https://www.osti.gov/servlets/purl/1184533.
@article{osti_1184533,
title = {Laterally injected light-emitting diode and laser diode},
author = {Miller, Mary A. and Crawford, Mary H. and Allerman, Andrew A.},
abstractNote = {A p-type superlattice is used to laterally inject holes into an III-nitride multiple quantum well active layer, enabling efficient light extraction from the active area. Laterally-injected light-emitting diodes and laser diodes can enable brighter, more efficient devices that impact a wide range of wavelengths and applications. For UV wavelengths, applications include fluorescence-based biological sensing, epoxy curing, and water purification. For visible devices, applications include solid state lighting and projection systems.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2015},
month = {6}
}
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.
Works referenced in this record:
Semiconductor laser with mesa stripe waveguide structure
patent, December 1988
- Ohba, Yasuo; Ishikawa, Masayuki; Yamamoto, Motoyuki
- US Patent Document 4,792,958
Deep native oxide confined ridge waveguide semiconductor lasers
patent, March 2000
- Sun, Decai
- US Patent Document 6,044,098
Semiconductor device including a strained superlattice layer above a stress layer
patent, November 2009
- Mears, Robert J.; Kreps, Scott A.
- US Patent Document 7,612,366
Light emitting device
patent-application, February 2012
- Ding, Liang; Yu, Mingbin; Lo, Guo Qiang Patrick
- US Patent Application 12/859587; 20120043527