Transistor-based particle detection systems and methods
Abstract
Transistor-based particle detection systems and methods may be configured to detect charged and non-charged particles. Such systems may include a supporting structure contacting a gate of a transistor and separating the gate from a dielectric of the transistor, and the transistor may have a near pull-in bias and a sub-threshold region bias to facilitate particle detection. The transistor may be configured to change current flow through the transistor in response to a change in stiffness of the gate caused by securing of a particle to the gate, and the transistor-based particle detection system may configured to detect the non-charged particle at least from the change in current flow.
- Inventors:
- Issue Date:
- Research Org.:
- Purdue Univ., West Lafayette, IN (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1183932
- Patent Number(s):
- 9052281
- Application Number:
- 13/748,171
- Assignee:
- Purdue Research Foundation (West Lafayette, IN)
- Patent Classifications (CPCs):
-
G - PHYSICS G01 - MEASURING G01N - INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- DOE Contract Number:
- FC52-08NA28617
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; 54 ENVIRONMENTAL SCIENCES
Citation Formats
Jain, Ankit, Nair, Pradeep R., and Alam, Muhammad Ashraful. Transistor-based particle detection systems and methods. United States: N. p., 2015.
Web.
Jain, Ankit, Nair, Pradeep R., & Alam, Muhammad Ashraful. Transistor-based particle detection systems and methods. United States.
Jain, Ankit, Nair, Pradeep R., and Alam, Muhammad Ashraful. Tue .
"Transistor-based particle detection systems and methods". United States. https://www.osti.gov/servlets/purl/1183932.
@article{osti_1183932,
title = {Transistor-based particle detection systems and methods},
author = {Jain, Ankit and Nair, Pradeep R. and Alam, Muhammad Ashraful},
abstractNote = {Transistor-based particle detection systems and methods may be configured to detect charged and non-charged particles. Such systems may include a supporting structure contacting a gate of a transistor and separating the gate from a dielectric of the transistor, and the transistor may have a near pull-in bias and a sub-threshold region bias to facilitate particle detection. The transistor may be configured to change current flow through the transistor in response to a change in stiffness of the gate caused by securing of a particle to the gate, and the transistor-based particle detection system may configured to detect the non-charged particle at least from the change in current flow.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2015},
month = {6}
}
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