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Title: Power module packaging with double sided planar interconnection and heat exchangers

Abstract

A double sided cooled power module package having a single phase leg topology includes two IGBT and two diode semiconductor dies. Each IGBT die is spaced apart from a diode semiconductor die, forming a switch unit. Two switch units are placed in a planar face-up and face-down configuration. A pair of DBC or other insulated metallic substrates is affixed to each side of the planar phase leg semiconductor dies to form a sandwich structure. Attachment layers are disposed on outer surfaces of the substrates and two heat exchangers are affixed to the substrates by rigid bond layers. The heat exchangers, made of copper or aluminum, have passages for carrying coolant. The power package is manufactured in a two-step assembly and heating process where direct bonds are formed for all bond layers by soldering, sintering, solid diffusion bonding or transient liquid diffusion bonding, with a specially designed jig and fixture.

Inventors:
; ; ;
Issue Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1182569
Patent Number(s):
9,041,183
Application Number:
13/547,937
Assignee:
UT-Battelle, LLC (Oak Ridge, TN)
DOE Contract Number:  
AC05-00OR22725
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING; 33 ADVANCED PROPULSION SYSTEMS

Citation Formats

Liang, Zhenxian, Marlino, Laura D., Ning, Puqi, and Wang, Fei. Power module packaging with double sided planar interconnection and heat exchangers. United States: N. p., 2015. Web.
Liang, Zhenxian, Marlino, Laura D., Ning, Puqi, & Wang, Fei. Power module packaging with double sided planar interconnection and heat exchangers. United States.
Liang, Zhenxian, Marlino, Laura D., Ning, Puqi, and Wang, Fei. Tue . "Power module packaging with double sided planar interconnection and heat exchangers". United States. https://www.osti.gov/servlets/purl/1182569.
@article{osti_1182569,
title = {Power module packaging with double sided planar interconnection and heat exchangers},
author = {Liang, Zhenxian and Marlino, Laura D. and Ning, Puqi and Wang, Fei},
abstractNote = {A double sided cooled power module package having a single phase leg topology includes two IGBT and two diode semiconductor dies. Each IGBT die is spaced apart from a diode semiconductor die, forming a switch unit. Two switch units are placed in a planar face-up and face-down configuration. A pair of DBC or other insulated metallic substrates is affixed to each side of the planar phase leg semiconductor dies to form a sandwich structure. Attachment layers are disposed on outer surfaces of the substrates and two heat exchangers are affixed to the substrates by rigid bond layers. The heat exchangers, made of copper or aluminum, have passages for carrying coolant. The power package is manufactured in a two-step assembly and heating process where direct bonds are formed for all bond layers by soldering, sintering, solid diffusion bonding or transient liquid diffusion bonding, with a specially designed jig and fixture.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2015},
month = {5}
}

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Works referenced in this record:

300A 650V 70 um thin IGBTs with double-sided cooling
conference, May 2011

  • Chang, Hsueh-Rong; Bu, Jiankang; Kong, George
  • IC's (ISPSD), 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs
  • DOI: 10.1109/ISPSD.2011.5890855

SKiN: Double side sintering technology for new packages
conference, May 2011

  • Stockmeier, Thomas; Beckedahl, Peter; Gobl, Christian
  • IC's (ISPSD), 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs
  • DOI: 10.1109/ISPSD.2011.5890856