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Title: Wet-chemical systems and methods for producing black silicon substrates

Abstract

A wet-chemical method of producing a black silicon substrate. The method comprising soaking single crystalline silicon wafers in a predetermined volume of a diluted inorganic compound solution. The substrate is combined with an etchant solution that forms a uniform noble metal nanoparticle induced Black Etch of the silicon wafer, resulting in a nanoparticle that is kinetically stabilized. The method comprising combining with an etchant solution having equal volumes acetonitrile/acetic acid:hydrofluoric acid:hydrogen peroxide.

Inventors:
; ;
Issue Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1179804
Patent Number(s):
9034216
Application Number:
13/825,541
Assignee:
Alliance for Sustainable Energy, LLC (Golden, CO)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01B - CABLES
DOE Contract Number:  
AC36-08GO28308
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; 36 MATERIALS SCIENCE; 14 SOLAR ENERGY

Citation Formats

Yost, Vernon, Yuan, Hao-Chih, and Page, Matthew. Wet-chemical systems and methods for producing black silicon substrates. United States: N. p., 2015. Web.
Yost, Vernon, Yuan, Hao-Chih, & Page, Matthew. Wet-chemical systems and methods for producing black silicon substrates. United States.
Yost, Vernon, Yuan, Hao-Chih, and Page, Matthew. Tue . "Wet-chemical systems and methods for producing black silicon substrates". United States. https://www.osti.gov/servlets/purl/1179804.
@article{osti_1179804,
title = {Wet-chemical systems and methods for producing black silicon substrates},
author = {Yost, Vernon and Yuan, Hao-Chih and Page, Matthew},
abstractNote = {A wet-chemical method of producing a black silicon substrate. The method comprising soaking single crystalline silicon wafers in a predetermined volume of a diluted inorganic compound solution. The substrate is combined with an etchant solution that forms a uniform noble metal nanoparticle induced Black Etch of the silicon wafer, resulting in a nanoparticle that is kinetically stabilized. The method comprising combining with an etchant solution having equal volumes acetonitrile/acetic acid:hydrofluoric acid:hydrogen peroxide.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2015},
month = {5}
}

Patent:

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