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Title: Wet-chemical systems and methods for producing black silicon substrates

A wet-chemical method of producing a black silicon substrate. The method comprising soaking single crystalline silicon wafers in a predetermined volume of a diluted inorganic compound solution. The substrate is combined with an etchant solution that forms a uniform noble metal nanoparticle induced Black Etch of the silicon wafer, resulting in a nanoparticle that is kinetically stabilized. The method comprising combining with an etchant solution having equal volumes acetonitrile/acetic acid:hydrofluoric acid:hydrogen peroxide.
Inventors:
; ;
Issue Date:
OSTI Identifier:
1179804
Assignee:
Alliance for Sustainable Energy, LLC (Golden, CO) GFO
Patent Number(s):
9,034,216
Application Number:
13/825,541
Contract Number:
AC36-08GO28308
Research Org:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; 36 MATERIALS SCIENCE; 14 SOLAR ENERGY

Works referenced in this record:

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