Growth of large aluminum nitride single crystals with thermal-gradient control

Title: Growth of large aluminum nitride single crystals with thermal-gradient control

In various embodiments, non-zero thermal gradients are formed within a growth chamber both substantially parallel and substantially perpendicular to the growth direction during formation of semiconductor crystals, where the ratio of the two thermal gradients (parallel to perpendicular) is less than 10, by, e.g., arrangement of thermal shields outside of the growth chamber.

Inventors:: Bondokov, Robert T; Rao, Shailaja P; Gibb, Shawn Robert; Schowalter, Leo J

Issue Date:: 2015-05-12

OSTI Identifier:: 1179234

Assignee:: Crystal IS, Inc. (Green Island, NY) NETL

Patent Number(s):: 9,028,612

Application Number:: 13/173,213

Contract Number:: FC26-08NT01578

Resource Relation:: Patent File Date: 2011 Jun 30

Research Org:: Crystal IS, Inc., Green Island, NY (United States)

Sponsoring Org:: USDOE

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY

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Schowalter, Leo J.; Slack, Glen A.
US Patent Document 6,719,843
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Method and apparatus for producing large, single-crystals of aluminum nitride
patent, August 2004

Schowalter, Leo J.; Slack, Glen A.; Rojo, J. Carlos
US Patent Document 6,770,135
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LED reflector for improved light extraction
patent, August 2004

Karlicek, Robert F.
US Patent Document 6,777,717
URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F6777717

Light emitting diodes including modifications for light extraction
patent, September 2004

Slater, Jr., David B.; Glass, Robert C.; Swoboda, Charles M.
US Patent Document 6,791,119
URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F6791119

Group III nitride LED with undoped cladding layer (5000.137)
patent, October 2004

Edmond, John Adam; Doverspike, Kathleen Marie; Kong, Hua-shuang
US Patent Document 6,800,876
URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F6800876

Light emitting devices with improved extraction efficiency
patent, December 2004

Erchak, Alexei A.; Lidorikis, Eleftrios; Luo, Chiyan
US Patent Document 6,831,302
URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F6831302

Methods of bonding two aluminum-comprising masses to one another
patent, January 2005

Kim, Jaeyeon
US Patent Document 6,840,431
URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F6840431

Nitride semiconductor substrate and method for manufacturing the same, and nitride semiconductor device using nitride semiconductor substrate
patent, March 2005

Kozaki, Tokuya; Kiyoku, Hiroyuki; Chocho, Kazuyuki
US Patent Document 6,861,729
URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F6861729

Nitride semiconductor laser
patent, May 2005

Tomiya, Shigetaka; Hino, Tomonori
US Patent Document 6,891,268
URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F6891268

Light-emitting diode (LED) with amorphous fluoropolymer encapsulant and lens
patent, July 2005

LeBoeuf, Steven Francis; Buckley, Jr., Donald Joseph; Weaver, Stanton Earl
US Patent Document 6,921,929
URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F6921929

Bulk GaN and ALGaN single crystals
patent, August 2005

Melnik, Yuri V.; Soukhoveev, Vitali; Ivantsov, Vladimir
US Patent Document 6,936,357
URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F6936357

Ultraviolet-light-based disinfection reactor
patent, September 2005

Schulz, Christopher R.
US Patent Document 6,940,075
URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F6940075

Integrated reflector cup for a light emitting device mount
patent, February 2006

Ludowise, Michael J.; Bhat, Jerome C.
US Patent Document 6,995,402
URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F6995402

Light emitting diodes including pedestals
patent, April 2006

Slater, Jr., David B.; Glass, Robert C.; Swoboda, Charles M.
US Patent Document 7,026,659
URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F7026659

Method of manufacturing a semiconductor light-emitting element
patent, May 2006

Sugiyama, Hitoshi; Ohashi, Kenichi; Yamashita, Atsuko
US Patent Document 7,037,738
URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F7037738

Method for polishing a substrate surface
patent, May 2006

Schowalter, Leo J.; Lopez, Javier Martinez; Rojo, Juan Carlos
US Patent Document 7,037,838
URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F7037838

Tantalum based crucible
patent, June 2006

Helava, Heikki I.; Ramm, Mark G.
US Patent Document 7,056,383
URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F7056383

High pressure high temperature growth of crystalline group III metal nitrides
patent, June 2006

D'Evelyn, Mark Philip; Webb, Steven William; Vagarali, Suresh Shankarappa
US Patent Document 7,063,741
URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F7063741

Nitride ceramics to mount aluminum nitride seed for sublimation growth
patent, August 2006

Rojo, Juan Carlos; Schowalter, Leo J.; Morgan, Kenneth
US Patent Document 7,087,112
URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F7087112

Semiconductor package having light sensitive chips
patent, August 2006

\tFjelstad, Joseph
US Patent Document 7,095,054
URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F7095054

Increased light extraction from a nitride LED
patent, October 2006

Sackrison, Michael J.; Venugopalan, Hari S.; Gao, Xiang
US Patent Document 7,125,734
URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F7125734

Light emitting diodes (LEDs) with improved light extraction by roughening
patent, March 2007

Tran, Chuong Anh; Doan, Trung Tri
US Patent Document 7,186,580
URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F7186580

Powder metallurgy crucible for aluminum nitride crystal growth
patent, May 2007

Schowalter, Leo J.; Slack, Glen A.
US Patent Document 7,211,146
URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F7211146

Light emitting device with patterned surfaces
patent, May 2007

Erchak, Alexei A.; Lidorikis, Eleftrios; Luo, Chiyan
US Patent Document 7,211,831
URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F7211831

Substrate for nitride semiconductor growth
patent, July 2007

Kumakura, Kazuhide; Hiroki, Masanobu; Makimoto, Toshiki
US Patent Document 7,244,520
URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F7244520

Card type LED illumination source
patent, July 2007

\tShimizu, Masanori; Yano, Tadashi; Setomoto, Tatsumi
US Patent Document 7,250,637
URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F7250637

Light emitting diode systems
patent, September 2007

Erchak, Alexei A.; Lidorikis, Eleftrios; Graff, John W.
US Patent Document 7,274,043
URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F7274043

III-V group nitride system semiconductor substrate
patent, October 2007

Shibata, Masatomo
US Patent Document 7,276,779
URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F7276779

Method of manufacturing GaN crystals and GaN crystal substrate, GaN crystals and GaN crystal substrate obtained by the method, and semiconductor device including the same
patent, October 2007

Kitaoka, Yasuo; Minemoto, Hisashi; Kidoguchi, Isao
US Patent Document 7,288,152
URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F7288152

Nitride based LED with a p-type injection region
patent, September 2008

Nagai, Hideo
US Patent Document 7,420,218
URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F7420218

Light emitting diodes including transparent oxide layers
patent, September 2008

Slater, Jr., David B.; Glass, Robert C.; Swoboda, Charles M.
US Patent Document 7,420,222
URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F7420222

Semiconductor light-emitting device and method for fabricating the same
patent, October 2008

Takigawa, Shinichi; Ueda, Daisuke; Koike, Susumu
US Patent Document 7,439,552
URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F7439552

Semiconductor light emitting device and method for manufacturing the same
patent, January 2009

Fujimoto, Akira; Asakawa, Koji; Ohashi, Kenichi
US Patent Document 7,476,910
URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F7476910

Semiconductor light emitting devices and submounts
patent, April 2009

Keller, Bernd; Ibbetson, James; Andrews, Peter
US Patent Document 7,518,158
URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F7518158

Method and apparatus for aluminum nitride monocrystal boule growth
patent, April 2009

Wang, Shaoping
US Patent Document 7,524,376
URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F7524376

Light-emitting apparatus
patent, June 2009

Okamoto, Satoru; Monoe, Shigeharu; Yokoshima, Takashi
US Patent Document 7,554,128
URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F7554128

Lighting device package
patent, December 2009

Harrah, Shane
US Patent Document 7,631,986
URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F7631986

Nitride semiconductor heterostructures and related methods
patent, December 2009

Schowalter, Leo J.; Smart, Joseph A.; Liu, Shiwen
US Patent Document 7,638,346
URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F7638346

Doped aluminum nitride crystals and methods of making them
patent, January 2010

Slack, Glen A.; Schowalter, Leo J.
US Patent Document 7,641,735
URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F7641735

III group nitride semiconductor substrate, substrate for group III nitride semiconductor device, and fabrication methods thereof
patent, March 2010

Shibata, Masatomo
US Patent Document 7,674,699
URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F7674699

Seeded growth process for preparing aluminum nitride single crystals
patent, March 2010

Schlesser, Raoul; Noveski, Vladimir; Sitar, Zlatko
US Patent Document 7,678,195
URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F7678195

Nitride semiconductor substrate, and method for working nitride semiconductor substrate
patent, May 2010

Nishiura, Takayuki; Mezaki, Yoshio
US Patent Document 7,713,844
URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F7713844

Light emitting element structure using nitride bulk single crystal layer
patent, July 2010

Dwilinski, Robert; Doradzinski, Roman; Garczynski, Jerzy
US Patent Document 7,750,355
URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F7750355

Nitride gallium semiconductor substrate and nitride semiconductor epitaxial substrate
patent, July 2010

Ueno, Masaki
US Patent Document 7,755,103
URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F7755103

Method and apparatus for producing large, single-crystals of aluminum nitride
patent, August 2010

Schowalter, Leo J.; Slack, Glen A.; Rojo, J. Carlos
US Patent Document 7,776,153
URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F7776153

Aluminum nitride sintered body and semiconductor manufacturing apparatus member
patent, September 2010

Teratani, Naomi; Katsuda, Yuji
US Patent Document 7,803,733
URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F7803733

Color control by alteration of wavelength converting element
patent, March 2011

Paolini, Steven; Camras, Michael D.; Chao Pujol, Oscar A.
US Patent Document 7,902,566
URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F7902566

Method of uniform phosphor chip coating and LED package fabricated using method
patent, May 2011

Loh, Ban P.; Medendorp, Jr., Nicholas W.; Andrews, Peter
US Patent Document 7,943,952
URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F7943952

Light emitting device
patent, June 2011

Kamada, Kazuo; Nishioka, Yasushi; Urano, Youji
US Patent Document 7,956,372
URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F7956372

Power surface mount light emitting die package
patent, July 2011

Loh, Ban P.
US Patent Document 7,976,186
URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F7976186

Methods for controllable doping of aluminum nitride bulk crystals
patent, September 2011

Morgan, Kenneth E.; Schowalter, Leo J.; Slack, Glen A.
US Patent Document 8,012,257
URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F8012257

Thick pseudomorphic nitride epitaxial layers
patent, December 2011

Grandusky, James R.; Schowalter, Leo J.; Gibb, Shawn R.
US Patent Document 8,080,833
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Deep-eutectic melt growth of nitride crystals
patent, January 2012

Slack, Glen A.; Schujman, Sandra B.
US Patent Document 8,088,220
URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F8088220

Method and apparatus for producing large, single-crystals of aluminum nitride
patent, February 2012

Schowalter, Leo J.; Slack, Glen A.; Rojo, J. Carlos
US Patent Document 8,123,859
URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F8123859

Nitride semiconductor heterostructures and related methods
patent, July 2012

Schowalter, Leo J.; Smart, Joseph A.; Liu, Shiwen
US Patent Document 8,222,650
URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F8222650

Defect reduction in seeded aluminum nitride crystal growth
patent, December 2012

Bondokov, Robert T.; Morgan, Kenneth E.; Schowalter, Leo J.
US Patent Document 8,323,406
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Large aluminum nitride crystals with reduced defects and methods of making them
patent, January 2013

Bondokov, Robert T.; Morgan, Kenneth; Slack, Glen A.
US Patent Document 8,349,077
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Method and apparatus for producing large, single-crystals of aluminum nitride
patent, October 2013

Schowalter, Leo J.; Slack, Glen A.; Rojo, J. Carlos
US Patent Application 11/431,090; 8,545,629
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Large aluminum nitride crystals with reduced defects and methods of making them
patent, November 2013

Bondokov, Robert; Morgan, Kenneth E.; Slack, Glen A.
US Patent Document 8,580,035
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Doped aluminum nitride crystals and methods of making them
patent-application, June 2014

\tSlack, Glen A.; Schowalter, Leo J.
US Patent Document 8,747,552
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Defect reduction in seeded aluminum nitride crystal growth
patent, September 2014

Bondokov, Robert T.; Morgan, Kenneth E.; Schowalter, Leo
US Patent Document 8,834,630
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Method and apparatus for producing large, single-crystals of aluminum nitride
patent, November 2014

Schowalter, Leo; Slack, Glen A.; Rojo, Juan Carlos
US Patent Document 8,896,020
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Led having angled sides for increased side light extraction
patent-application, April 2001

Krames, Michael R.; Kish Jr., Fred A.; Tan, Tun S.
US Patent Application 09/732326; 20010000209
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Method for growing nitride semiconductor crystals, nitride semiconductor device, and method for fabricating the same
patent-application, June 2001

\tItoh, Kunio; Ishida, Masahiro
US Patent Application 09/758287; 20010005023
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Semiconductor device and method and apparatus for manufacturing semiconductor device
patent-application, September 2001

Yagi, Shigeru
US Patent Application \t09/772863; 20010024871
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Use of CSOH in a Dielectric CMP Slurry
patent-application, December 2001

Francis, Alicia F.; Mueller, Brian L.; Dirksen, James A.
US Patent Application \t09/428965; 20010051433
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Light emitting diodes with improved light extraction efficiency
patent-application, March 2002

Camras, Michael D.; Krames, Michael R.; Snyder, Wayne L.
US Patent Application 09/880204; 20020030194
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Method and apparatus for growing aluminum nitride monocrystals
patent-application, November 2002

Vodakov, Yury Alexandrovich; Karpov, Sergei Yurievich; Makarov, Yury Nikolaevich
US Patent Application 10/067631; 20020170490
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Passivated nanoparticles, method of fabrication thereof, and devices incorporating nanoparticles
patent-application, March 2003

Dutta, Partha
US Patent Application \t10/233587; 20030047816
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FCSEL that frequency doubles its output emissions using sum-frequency generation
patent-application, August 2003

Henrichs, Joseph Reid
US Patent Application 10/350512; 20030160254
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Method and apparatus for producing large, single-crystals of aluminum nitride
patent-application, September 2003

\tSchowalter, Leo J.; Slack, Glen A.; Rojo, J. Carlos
US Patent Application 10/324998; 20030168003
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III-V Nitride homoepitaxial material of improved MOVPE epitaxial quality (surface texture and defect density) formed on free-standing (Al,In,Ga)N substrates, and opto-electronic and electronic devices comprising same
patent-application, November 2003

Flynn, Jeffrey S.; Brandes, George R.; Vaudo, Robert P.
US Patent Application 10/313561; 20030213964
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Light-emitting gallium nitride-based compound semiconductor device
patent-application, November 2003

Nakamura, Shuji; Mukai, Takashi; Iwasa, Naruhito
US Patent Application 10/456475; 20030216011
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Method for polishing a substrate surface
patent-application, February 2004

Schowalter, Leo J.; Lopez, Javier Martinez; Rojo, Juan Carlos
US Patent Application 10/300481; 20040033690
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Drain/source extension structure of a field effect transistor including doped high-k sidewall spacers
patent-application, June 2004

Feudel, Thomas; Horstmann, Manfred; Wieczorek, Karsten
US Patent Application 10/442745; 20040104442
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Gallium nitride material devices and methods of forming the same
patent-application, July 2004

Weeks, T. Warren; Linthicum, Kevin J.
US Patent Application 10/650122; 20040130002
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Method of fabricating monocrystalline crystals
patent-application, September 2004

Letertre, Fabrice
US Patent Application 10/716451; 20040187766
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Strain compensated semiconductor structures
patent-application, October 2004

\tSaxler, Adam William
US Patent Application 10/839593; 20040206978
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Nitride Semiconductor Layer Structure and a Nitride Semiconductor Laser Incorporating a Portion of Same
patent-application, October 2004

Amano, Hiroshi; Akasaki, Isamu; Kaneko, Yawara
US Patent Application 10/040328; 20040213309
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Methods of growing nitride-based film using varying pulses
patent-application, November 2004

Fareed, Ohalid; Gaska, Remigijus; Shur, Michael
US Patent Application 10/713326; 20040224484
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Methods for machining ceramics
patent-application, November 2004

Laconto, Ronald W.; Ward, Douglas E.
US Patent Application 10/423283; 20040226917
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Homoepitaxial gallium-nitride-based light emitting device and method for producing
patent-application, December 2004

D'Evelyn, Mark Philip; Evers, Nicole Andrea; LeBoeuf, Steven Francis
US Patent Application 10/831865; 20040245535
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Light emitting element structure using nitride bulk single crystal layer
patent-application, December 2004

Dwilinski, Robert; Doradzinski, Roman; Garczynski, Jerzy
US Patent Application 10/493594; 20040251471
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Discharge electrode, a discharge lamp and a method for manufacturing the discharge electrode
patent-application, March 2005

Sakai, Tadashi; Ono, Tomio; Sakuma, Naoshi
US Patent Application \t10/899153; 20050062392
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Group-III nitride semiconductor device
patent-application, April 2005

Sasaoka, Chiaki
US Patent Application 10/991544; 20050072986
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Large area, uniformly low dislocation density GaN substrate and process for making the same
patent-application, May 2005

Xu, Xueping; Vaudo, Robert P.
US Patent Application 10/712351; 20050103257
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Method and apparatus for fabricating crack-free Group III nitride semiconductor materials
patent-application, June 2005

Dmitriev, Vladimir A.; Melnik, Yuri V.
US Patent Application \t10/778633; 20050142391
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Al_xIn_yGa_1-x-yN mixture crystal substrate, method of growing same and method of producing same
patent-application, July 2005

Nakahata, Seiji; Hirota, Ryu; Motoki, Kensaku
US Patent Application 11/041202; 20050161697
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Bulk GaN and AlGaN single crystals
patent-application, July 2005

Melnik, Yuri V.; Soukhoveev, Vitali; Ivantsov, Vladimir
US Patent Application 11/083609; 20050164044
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Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition
patent-application, September 2005

\tChakraborty, Arpan; Haskell, Benjamin A.; Keller, Stacia
US Patent Application 11/123805; 20050214992
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Surface treatment method and surface treatment device
patent-application, December 2005

Ueda, Tetsuzo; Ueda, Daisuke
US Patent Application \t11/146036; 20050269577
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Nitride single crystal and producing method thereof
patent-application, December 2005

Uematsu, Koji; Nakahata, Seiji
US Patent Application 10/866007; 20050277214
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Gallium nitride materials and methods associated with the same
patent-application, December 2005

\tPiner, Edwin Lanier; Roberts, John C.; Rajagopal, Pradeep
US Patent Application 10/879703; 20050285141
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Method and apparatus for producing large, single-crystals of aluminum nitride
patent-application, January 2006

Schowalter, Leo J.; Slack, Glen A.; Rojo, J. Carlos
US Patent Application 10/910162; 20060005763
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High surface quality GaN wafer and method of fabricating same
patent-application, February 2006

Xu, Xueping; Vaudo, Robert P.
US Patent Application \t11/213535; 20060029832
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Substrate for epitaxy and method of preparing the same
patent-application, March 2006

Dwilinski, Robert; Doradzinski, Roman; Garczynski, Jerzy
US Patent Application 10/538407; 20060054075
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Compensating liquid delivery system and method
patent-application, August 2006

\tSage Jr., Burton H.
US Patent Application \t11/055643; 20060181695
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Binary group III-nitride based high electron mobility transistors and methods of fabricating same
patent-application, November 2006

Saxler, Adam William
US Patent Application 11/118675; 20060244011
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Bonded intermediate substrate and method of making same
patent-application, November 2006

Pinnington, Thomas Henry; Zahler, James M.; Park, Young-Bae
US Patent Application 11/408239; 20060255341
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Method for manufacturing nitride-based semiconductor device
patent-application, December 2006

Park, Hee Seok
US Patent Application 11/448866; 20060281205
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Polar surface preparation of nitride substrates
patent-application, December 2006

Slack, Glen A.; Schujman, Sandra B.; Meyer, Nicholas R.
US Patent Application \t11/448595; 20060288929
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Light emitting diodes with high light extraction and high reflectivity
patent-application, January 2007

Beeson, Karl W.; Zimmerman, Scott M.; Livesay, William R.
US Patent Application \t11/389201; 20070018184
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Photocrosslinked hydrogel surface coatings
patent-application, April 2007

Huang, Wenxi; Agroskin, Yury; Boschetti, Egisto
US Patent Application \t10/546173; 20070082019
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Method and apparatus for producing large, single-crystals of aluminum nitride
patent-application, May 2007

Schowalter, Leo J.; Slack, Glen A.; Rojo, J. Carlos
US Patent Application 11/431090; 20070101932
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High light extraction efficiency light emitting diode (LED)
patent-application, May 2007

DenBaars, Steven P.; Nakamura, Shuji; Masui, Hisashi
US Patent Application 11/593268; 20070102721
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Doped aluminum nitride crystals and methods of making them
patent-application, June 2007

Slack, Glen A.; Schowalter, Leo J.
US Patent Application 11/633667; 2007013116
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Large aluminum nitride crystals with reduced defects and methods of making them
patent-application, June 2007

Bondokov, Robert T.; Morgan, Kenneth; Slack, Glen A.
US Patent Application 11/605192; 20070134827
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Water purifier
patent-application, July 2007

Wang, Shun-Chung; Lee, Ren-Guey
US Patent Application 11/319457; 20070151905
URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220070151905%22.PGNR.&OS=DN/20070151905&RS=DN/20070151905

Method of Fabricating Light Emitting Device and Thus-Fabricated Light Emitting Device
patent-application, September 2007

Ikeda, Hitoshi; Suzuki, Kingo; Nakamura, Akio
US Patent Application 11/587632; 20070224714
URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220070224714%22.PGNR.&OS=DN/20070224714&RS=DN/20070224714

Methods for controllable doping of aluminum nitride bulk crystals
patent-application, October 2007

Morgan, Kenneth E.; Schowalter, Leo J.; Slack, Glen A.
US Patent Application 11/731790; 20070243653
URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220070243653%22.PGNR.&OS=DN/20070243653&RS=DN/20070243653

Seeded growth process for preparing aluminum nitride single crystals
patent-application, November 2007

\tSchlesser, Raoul; Noveski, Vladimir; Sitar, Zlatko
US Patent Application 11/399713; 20070257333
URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220070257333%22.PGNR.&OS=DN/20070257333&RS=DN/20070257333

Method and apparatus for producing large, single-crystals of aluminum nitride
patent-application, January 2008

Schowalter, Leo J.; Slack, Glen A.; Rojo, J. Carlos
US Patent Application \t11/265909; 20080006200
URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220080006200%22.PGNR.&OS=DN/20080006200&RS=DN/20080006200

LED PACKAGE WITH CONVERGING EXTRACTOR
patent-application, January 2008

Thielen, James A.; Leatherdale, Catherine A.; Ouderkirk, Andrew J.
US Patent Application 11/778385; 20080012034
URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220080012034%22.PGNR.&OS=DN/20080012034&RS=DN/20080012034

Light Emitting Devices with Improved Light Extraction Efficiency
patent-application, January 2008

Camras, Michael D.; Krames, Michael R.; Snyder, Wayne L.
US Patent Application 11/868903; 20080023719
URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220080023719%22.PGNR.&OS=DN/20080023719&RS=DN/20080023719

PULSED GROWTH OF CATALYST-FREE GROWITH OF GaN NANOWIRES AND APPLICATION IN GROUP III NITRIDE SEMICONDUCTOR BULK MATERIAL
patent-application, February 2008

Hersee, Stephen D.; Wang, Xin; Sun, Xinyu
US Patent Application 11/684264; 20080036038
URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220080036038%22.PGNR.&OS=DN/20080036038&RS=DN/20080036038

Light emitting packages and methods of making same
patent-application, March 2008

\tReginelli, James; Aanegola, Srinath K.; Radkov, Emil
US Patent Application \t11/516533; 20080054280
URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220080054280%22.PGNR.&OS=DN/20080054280&RS=DN/20080054280

Compound semiconductor modified surface by use of pulsed electron beam and ion implantation through a deposited metal layer
patent-application, April 2008

Melas, Andreas A.
US Patent Application \t11/998961; 20080087984
URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220080087984%22.PGNR.&OS=DN/20080087984&RS=DN/20080087984

Semiconductor Devices Having Low Threading Dislocations and Improved Light Extraction and Methods of Making the Same
patent-application, May 2008

\tBergmann, Michael John; Hansen, Jason; Emerson, David Todd
US Patent Application 11/563712; 20080121910
URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220080121910%22.PGNR.&OS=DN/20080121910&RS=DN/20080121910

Spatial localization of light-generating portions in LEDs
patent-application, June 2008

Pokrovskiy, Alexander L.; Lim, Michael; Nemchuk, Nikolay I.
US Patent Application \t11/636380; 20080135861
URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220080135861%22.PGNR.&OS=DN/20080135861&RS=DN/20080135861

CHIP-SCALE METHODS FOR PACKAGING LIGHT EMITTING DEVICES AND CHIP-SCALE PACKAGED LIGHT EMITTING DEVICES
patent-application, June 2008

Ibbetson, James; Keller, Bernd; Parikh, Primit
US Patent Application 12/027313; 20080142817
URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220080142817%22.PGNR.&OS=DN/20080142817&RS=DN/20080142817

LIGHT EMITTING DEVICES WITH AN ELECTRICALLY ACTIVE TOP REFLECTOR CONTACT
patent-application, June 2008

Chua, Christopher L.; Teepe, Mark R.; Knollenberg, Clifford
US Patent Application 11/962861; 20080144688
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SEMICONDUCTOR LIGHT EMITTING DEVICE, LIGHT EMITTING MODULE, LIGHTING APPARATUS, DISPLAY ELEMENT AND MANUFACTURING METHOD OF SEMICONDUCTOR LIGHT EMITTING DEVICE
patent-application, June 2008

\tNagai, Hideo
US Patent Application \t11/969102; 20080149945
URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220080149945%22.PGNR.&OS=DN/20080149945&RS=DN/20080149945

LIGHT-EMITTING APPARATUS AND METHOD OF PRODUCING THE SAME
patent-application, June 2008

Amo, Takahiro; Nishijima, Shinji; Okada, Satoshi
US Patent Application \t11/963250; 20080149960
URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220080149960%22.PGNR.&OS=DN/20080149960&RS=DN/20080149960

LIGHT-EMITTING DEVICES
patent-application, July 2008

Erchak, Alexei A.; Lidorikis, Elefterios; Luo, Chiyan
US Patent Application 11/944815; 20080157111
URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220080157111%22.PGNR.&OS=DN/20080157111&RS=DN/20080157111

Self-luminous device
patent-application, July 2008

Baba, Toshihiko; Morito, Kosuke
US Patent Application \t11/906074; 20080173887
URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220080173887%22.PGNR.&OS=DN/20080173887&RS=DN/20080173887

DEFECT REDUCTION IN SEEDED ALUMINUM NITRIDE CRYSTAL GROWTH
patent-application, July 2008

Bondokov, Robert T.; Morgan, Kenneth E.; Schowalter, Leo J.
US Patent Application 12/015957; 20080182092
URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220080182092%22.PGNR.&OS=DN/20080182092&RS=DN/20080182092

Thick Pseudomorphic Nitride Epitaxial Layers
patent-application, August 2008

Schowalter, Leo J.; Smart, Joseph A.; Grandusky, James R.
US Patent Application 12/020006; 20080187016
URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220080187016%22.PGNR.&OS=DN/20080187016&RS=DN/20080187016

Methods of forming packaged semiconductor light emitting devices having front contacts by compression molding
patent-application, August 2008

\tMedendorp, Nicholas W.
US Patent Application 11/705233; 20080191225
URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220080191225%22.PGNR.&OS=DN/20080191225&RS=DN/20080191225

SEMICONDUCTOR LIGHT-EMITTING DEVICE
patent-application, October 2008

Hsu, Chih Peng; Ma, Chih Pang; Chan, Shih Hsiung
US Patent Application \t12/031473; 20080246047
URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220080246047%22.PGNR.&OS=DN/20080246047&RS=DN/20080246047

Semiconductor light-emitting device, method for manufacturing the same, and light-emitting apparatus including the same
patent-application, October 2008

Kususe, Takeshi; Sakamoto, Takahiko
US Patent Application 12/155841; 20080251808
URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220080251808%22.PGNR.&OS=DN/20080251808&RS=DN/20080251808

Light emitting diode chip
patent-application, October 2008

Zimmerman, Scott M.; Beeson, Karl W.; Livesay, William R.
US Patent Application 12/148888; 20080258165
URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220080258165%22.PGNR.&OS=DN/20080258165&RS=DN/20080258165

Semiconductor Light Emitting Device, Illumination Module, Illumination Apparatus, Method For Manufacturing Semiconductor Light Emitting Device, and Method For Manufacturing Semiconductor Light Emitting Element
patent-application, January 2009

Nagai, Hideo
US Patent Application 11/720258; 20090008654
URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220090008654%22.PGNR.&OS=DN/20090008654&RS=DN/20090008654

PATTERNED LIGHT EMITTING DEVICES
patent-application, January 2009

Erchak, Alexei A.
US Patent Application \t12/173293; 20090014742
URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220090014742%22.PGNR.&OS=DN/20090014742&RS=DN/20090014742

Group III nitride-based compound semiconductor light emitting device
patent-application, February 2009

Saito, Yoshiki; Yajima, Takayoshi; Ushida, Yasuhisa
US Patent Application 12/219455; 20090039373
URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220090039373%22.PGNR.&OS=DN/20090039373&RS=DN/20090039373

DEEP-EUTECTIC MELT GROWTH OF NITRIDE CRYSTALS
patent-application, February 2009

Slack, Glen A.; Schujman, Sandra B.
US Patent Application \t12/126334; 20090050050
URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220090050050%22.PGNR.&OS=DN/20090050050&RS=DN/20090050050

WHITE LIGHT LED WITH MULTIPLE ENCAPSULATION LAYERS
patent-application, March 2009

Yen, Jui-Kang; Chen, Yung-Wei; Liu, Tien-Min
US Patent Application \t11/851216; 20090065791
URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220090065791%22.PGNR.&OS=DN/20090065791&RS=DN/20090065791

METHOD OF MAKING AN LED DEVICE HAVING A DOME LENS
patent-application, March 2009

Thompson, D. Scott; Kecman, Fedja
US Patent Application 11/851604; 20090065792
URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220090065792%22.PGNR.&OS=DN/20090065792&RS=DN/20090065792

LIGHT EMITTING DEVICE
patent-application, March 2009

Hoshina, Takaharu
US Patent Application 12/278320; 20090078957
URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220090078957%22.PGNR.&OS=DN/20090078957&RS=DN/20090078957

LED with current confinement structure and surface roughening
patent-application, May 2009

Denbaars, Steven P.; Nakamura, Shuji; Batres, Max
US Patent Application \t12/079486; 20090121246
URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220090121246%22.PGNR.&OS=DN/20090121246&RS=DN/20090121246

HIGH LIGHT EXTRACTION EFFICIENCY LIGHT EMITTING DIODE (LED) USING GLASS PACKAGING
patent-application, May 2009

\tDenBaars, Steven P.; Nakamura, Shuji; Masui, Hisashi
US Patent Application 12/275136; 20090121250
URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220090121250%22.PGNR.&OS=DN/20090121250&RS=DN/20090121250

Substrate-free light emitting diode chip
patent-application, June 2009

Zimmerman, Scott M.; Beeson, Karl W.; Livesay, William R.
US Patent Application 12/221304; 20090140279
URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220090140279%22.PGNR.&OS=DN/20090140279&RS=DN/20090140279

LIGHT OUTPUT ENHANCED GALLIUM NITRIDE BASED THIN LIGHT EMITTING DIODE
patent-application, June 2009

Sonoda, Junichi; Nakamura, Shuji; Iso, Kenji
US Patent Application 12/325939; 20090141502
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PROTECTION OF SIGE DURING ETCH AND CLEAN OPERATIONS
patent-application, June 2009

Chakravarti, Ashima B.; Luo, Zhijiong; Mo, Renee
US Patent Application \t11/954802; 20090155969
URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220090155969%22.PGNR.&OS=DN/20090155969&RS=DN/20090155969

NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD OF PRODUCING SAME
patent-application, June 2009

Uematsu, Koji; Hirota, Ryu; Nakahata, Seiji
US Patent Application 12/388983; 20090155989
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LIGHT EMITTING DIODE STRUCTURE AND METHOD FOR FABRICATING THE SAME
patent-application, June 2009

Lin, Hung-Cheng; Lee, Chia-Ming; Chyi, Jen-Inn
US Patent Application 11/963558; 20090159910
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LIGHT EMITTING DEVICE
patent-application, July 2009

Yamada, Motokazu; Inobe, Mototaka; Izuno, Kunihiro
US Patent Application 12/341189; 20090166657
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LIGHT EMITTING DEVICES WITH HIGH EFFICIENCY PHOSPOR STRUCTURES
patent-application, July 2009

Chakraborty, Arpan; Keller, Bernd
US Patent Application 11/969508; 20090173958
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Led with substrate modifications for enhanced light extraction and method of making same
patent-application, September 2009

Batres, Max; Ibbetson, James; Li, Ting
US Patent Application 12/384277; 20090233394
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AlGaN SUBSTRATE AND PRODUCTION METHOD THEREOF
patent-application, September 2009

Amano, Hiroshi; Bando, Akira
US Patent Application 12/434916; 20090239357
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LEDs using single crystalline phosphor and methods of fabricating same
patent-application, October 2009

Chakraborty, Arpan
US Patent Application 12/082444; 20090256163
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SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME
patent-application, October 2009

Ueda, Tetsuzo
US Patent Application 12/490200; 20090261372
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SEMICONDUCTOR LIGHT EMITTING DEVICE
patent-application, October 2009

Choi, Sung Min
US Patent Application 12/428868; 20090267098
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LIGHT-EMITTING DIODE AND METHOD FOR FABRICATION THEREOF
patent-application, November 2009

Nabekura, Wataru; Takeuchi, Ryouichi
US Patent Application \t12/158914; 20090278148
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NITRIDE SEMICONDUCTOR HETEROSTRUCTURES AND RELATED METHODS
patent-application, November 2009

Schowalter, Leo J.; Smart, Joseph A.; Liu, Shiwen
US Patent Application 11/503660; 20090283028
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Light emitting elements, light emitting devices including light emitting elements and methods of manufacturing such light emitting elements and/or devices
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Kim, Yu-Sik; Lee, Seung-Jae
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LED WITH IMPROVED EXTERNAL LIGHT EXTRACTION EFFICIENCY
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LIU, WEN-HUANG; Dan, Chung-Che
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SEMICONDUCTOR LIGHT-EMITTING DEVICE
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Hattori, Yasushi; Saito, Shinji; Hiramatsu, Ryosuke
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LIGHT EMITTING DEVICE
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Lee, Jong Lam; Lee, Jae Ho; Yoon, Yeo Jin
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Diode having high brightness and method thereof
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Yoo, Myung Cheol
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HIGHLY EFFICIENT GALLIUM NITRIDE BASED LIGHT EMITTING DIODES VIA SURFACE ROUGHENING
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Fujii, Tetsuo; Gao, Yan; Hu, Evelyn L.
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BOND PAD DESIGN FOR ENHANCING LIGHT EXTRACTION FROM LED CHIPS
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Li, Ting
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NITRIDE SEMICONDUCTOR HETEROSTRUCTURES AND RELATED METHODS
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Schowalter, Leo J.; Smart, Joseph A.; Liu, Shiwen
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Doped Aluminum Nitride Crystals and Methods of Making Them
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Slack, Glen A.; Schowalter, Leo J.
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THICK PSEUDOMORPHIC NITRIDE EPITAXIAL LAYERS
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Grandusky, James R.; Schowalter, Leo J.; Gibb, Shawn R.
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In-line Fluid Treatment by UV Radiation
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Bettles, Timothy J.; Berger, Steven; Schujman, Sandra B.
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ALUMINUM NITRIDE BULK CRYSTALS HAVING HIGH TRANSPARENCY TO ULTRAVIOLET LIGHT AND METHODS OF FORMING THEM
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Schujman, Sandra B.; Rao, Shailaja P.; Bondokov, Robert T.
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LIGHT EMITTING DIODES WITH SMOOTH SURFACE FOR REFLECTIVE ELECTRODE
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Lin, Chao-Kun; Liu, Heng
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METHOD AND APPARATUS FOR PRODUCING LARGE, SINGLE-CRYSTALS OF ALUMINUM NITRIDE
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Schowalter, Leo J.; Slack, Glen A.; Rojo, J. Carlos
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POLYCRYSTALLINE ALUMINUM NITRIDE MATERIAL AND METHOD OF PRODUCTION THEREOF
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Moody, Baxter; Dalmau, Rafael; Henshall, David
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THICK PSEUDOMORPHIC NITRIDE EPITAXIAL LAYERS
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Grandusky, James R.; Schowalter, Leo J.; Gibb, Shawn R.
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LARGE ALUMINUM NITRIDE CRYSTALS WITH REDUCED DEFECTS AND METHODS OF MAKING THEM
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Bondokov, Robert T.; Morgan, Kenneth E.; Slack, Glen A.
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DEFECT REDUCTION IN SEEDED ALUMINUM NITRIDE CRYSTAL GROWTH
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Bondokov, Robert T.; Morgan, Kenneth E.; Schowalter, Leo
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METHOD AND APPARATUS FOR PRODUCING LARGE, SINGLE-CRYSTALS OF ALUMINUM NITRIDE
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\tSchowalter, Leo; Slack, Glen A.; Rojo, Juan Carlos
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LARGE ALUMINUM NITRIDE CRYSTALS WITH REDUCED DEFECTS AND METHODS OF MAKING THEM
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Bondokov, Robert; Morgan, Kenneth E.; Slack, Glen A.
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PHOTON EXTRACTION FROM NITRIDE ULTRAVIOLET LIGHT-EMITTING DEVICES
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Schowalter, Leo J.; Chen, Jianfeng; Grandusky, James R.
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DOPED ALUMINUM NITRIDE CRYSTALS AND METHODS OF MAKING THEM
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\tSlack, Glen A.; Schowalter, Leo J.
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PSEUDOMORPHIC ELECTRONIC AND OPTOELECTRONIC DEVICES HAVING PLANAR CONTACTS
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\tGrandusky, James R.; Schowalter, Leo J.; Jamil, Muhammad
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Carlos Rojo, J.; Schowalter, Leo J.; Gaska, Remis
Journal of Crystal Growth, Vol. 240, Issue 3-4, p. 508-512
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Progress in the Preparation of Aluminum Nitride Substrates from Bulk Crystals
journal, January 2002

Rojo, J. C.; Schowalter, L. J.; Slack, Glen
MRS Proceedings, Vol. 722
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Report on the growth of bulk aluminum nitride and subsequent substrate preparation
journal, October 2001

Carlos Rojo, J.; Slack, Glen A.; Morgan, Kenneth
Journal of Crystal Growth, Vol. 231, Issue 3, p. 317-321
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Reduction of oxygen contamination in AlN
journal, December 2003

Salzman, J.; Prawer, S.; Meyler, B.
physica status solidi (c), Vol. 0, Issue 7, p. 2541-2544
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Crucible materials for growth of aluminum nitride crystals
journal, July 2005

Schlesser, R.; Dalmau, R.; Zhuang, D.
Journal of Crystal Growth, Vol. 281, Issue 1, p. 75-80
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Seeded growth of AlN bulk single crystals by sublimation
journal, June 2002

Schlesser, R.; Dalmau, R.; Sitar, Z.
Journal of Crystal Growth, Vol. 241, Issue 4, p. 416-420
DOI: 10.1016/S0022-0248(02)01319-2

Comparison of various buffer schemes to grow GaN on large-area Si(111) substrates using metal-organic chemical-vapor deposition
journal, May 2003

Venugopal, R.; Wan, J.; Melloch, M.
Journal of Electronic Materials, Vol. 32, Issue 5, p. 371-374
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Synthesis of the Cubic Form of Boron Nitride
journal, March 1961

Wentorf, R. H.
The Journal of Chemical Physics, Vol. 34, Issue 3, p. 809-812
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Low resistivity aluminum nitride: carbon (AlN : C) films grown by metal organic chemical vapor deposition
journal, March 1996

Wongchotigul, K.; Chen, N.; Zhang, D. P.
Materials Letters, Vol. 26, Issue 4-5, p. 223-226
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Preparation of GaN Single Crystals Using a Na Flux
journal, February 1997

Yamane, Hisanori; Shimada, Masahiko; Clarke, Simon J.
Chemistry of Materials, Vol. 9, Issue 2, p. 413-416
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Growth of nitride crystals, BN, AlN and GaN by using a Na flux
journal, April 2000

Yano, M.; Okamoto, M.; Yap, Y. K.
Diamond and Related Materials, Vol. 9, Issue 3-6, p. 512-515
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Enhancement of light extraction from light emitting diodes
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Zhmakin, A. I.
Physics Reports, Vol. 498, Issue 4-5, p. 189-241
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Seeded growth of AlN single crystals by physical vapor transport
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Zhuang, D.; Herro, Z. G.; Schlesser, R.
Journal of Crystal Growth, Vol. 287, Issue 2, p. 372-375
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Very low dislocation density AlN substrates for device applications
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Schujman, Sandra B.; Schowalter, Leo J.; Liu, Wayne
Gallium Nitride Materials and Devices, Vol. 6121
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Investigation of Oxygen-Related Luminescence Centres in AlN Ceramics
journal, May 2000

Schweizer, S.; Rogulis, U.; Spaeth, J.-M.
physica status solidi (b), Vol. 219, Issue 1, p. 171-180
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Photoluminescence properties of AlN homoepilayers with different orientations
journal, July 2008

Sedhain, A.; Nepal, N.; Nakarmi, M. L.
Applied Physics Letters, Vol. 93, Issue 4, Article No. 041905
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On mechanisms of sublimation growth of AlN bulk crystals
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Segal, A. S.; Karpov, S. Yu.; Makarov, Yu. N.
Journal of Crystal Growth, Vol. 211, Issue 1-4, p. 68-72
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III-nitride blue and UV photonic-crystal light-emitting diodes
conference, October 2004

Shakya, Jagat B.; Kim, Kyoung Hoon; Oder, Tom N.
Fourth International Conference on Solid State Lighting, Vol. 5530
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Luminescence properties of wurtzite AlN nanotips
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Shi, Shih-Chen; Chen, Chia Fu; Chattopadhyay, Surojit
Applied Physics Letters, Vol. 89, Issue 16, Article No. 163127
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High-quality and crack-free Al_xGa_1−xN (x∼0.2) grown on sapphire by a two-step growth method
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Shih, C. F.; Keh, M. Y.; Wang, Y. N.
Journal of Crystal Growth, Vol. 277, Issue 1-4, p. 44-50
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Physical vapor transport growth of large AlN crystals
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Singh, N. B.; Berghmans, A.; Zhang, H.
Journal of Crystal Growth, Vol. 250, Issue 1-2, p. 107-112
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Ain single crystals
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Slack, G. A.; McNelly, T. F.
Journal of Crystal Growth, Vol. 42, p. 560-563
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Growth of high purity AlN crystals
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Slack, Glen A.; McNelly, T. F.
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The growth and optical properties of large, high-quality AlN single crystals
journal, November 2004

Strassburg, Martin; Senawiratne, Jayantha; Dietz, Nikolaus
Journal of Applied Physics, Vol. 96, Issue 10, p. 5870-5876
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Phase relationships in the system Y-A1-O-N
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Sun, W. Y.; Huang, Z. K.; Tien, T. Y.
Materials Letters, Vol. 11, Issue 3-4, p. 67-69
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Degradation in AlGaInN lasers
journal, December 2003

Takeya, Motonobu; Mizuno, Takashi; Sasaki, Tomomi
physica status solidi (c), Vol. 0, Issue 7, p. 2292-2295
DOI: 10.1002/pssc.200303324

An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
journal, May 2006

Taniyasu, Yoshitaka; Kasu, Makoto; Makimoto, Toshiki
Nature, Vol. 441, Issue 7091, p. 325-328
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Chemical Mechanical Polishing of Gallium Nitride
journal, January 2002

Tavernier, P. R.; Margalith, T.; Coldren, L. A.
Electrochemical and Solid-State Letters, Vol. 5, Issue 8, p. G61-G64
DOI: 10.1149/1.1485807

Determination of the concentration of oxygen dissolved in the AlN lattice by hot gas extraction from AlN ceramics
journal, January 1991

Thomas, Andreas; Müller, Gerd
Journal of the European Ceramic Society, Vol. 8, Issue 1, p. 11-19
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Dislocations in GaN-Based Laser Diodes on Epitaxial Lateral Overgrown GaN Layers
journal, November 2001

Tomiya, S.; Nakajima, H.; Funato, K.
physica status solidi (a), Vol. 188, Issue 1, p. 69-72
DOI: 10.1002/1521-396X(200111)188:1<69::AID-PSSA69>3.0.CO;2-8

Stimulated luminescence of AlN ceramics induced by ultraviolet radiation
journal, October 2001

Trinkler, L.; Bøtter-Jensen, L.; Christensen, P.
Radiation Measurements, Vol. 33, Issue 5, p. 731-735
DOI: 10.1016/S1350-4487(01)00093-2

Solid-state lighting: lamps, chips, and materials for tomorrow
journal, May 2004

Tsao, J. Y.
IEEE Circuits and Devices Magazine, Vol. 20, Issue 3, p. 28-37
DOI: 10.1109/MCD.2004.1304539

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