Growth of large aluminum nitride single crystals with thermal-gradient control
In various embodiments, non-zero thermal gradients are formed within a growth chamber both substantially parallel and substantially perpendicular to the growth direction during formation of semiconductor crystals, where the ratio of the two thermal gradients (parallel to perpendicular) is less than 10, by, e.g., arrangement of thermal shields outside of the growth chamber.
- Issue Date:
- OSTI Identifier:
- 1179234
- Assignee:
- Crystal IS, Inc. (Green Island, NY) NETL
- Patent Number(s):
- 9,028,612
- Application Number:
- 13/173,213
- Contract Number:
- FC26-08NT01578
- Resource Relation:
- Patent File Date: 2011 Jun 30
- Research Org:
- Crystal IS, Inc., Green Island, NY (United States)
- Sponsoring Org:
- USDOE
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
- Full Text
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