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Title: Growth of large aluminum nitride single crystals with thermal-gradient control

Abstract

In various embodiments, non-zero thermal gradients are formed within a growth chamber both substantially parallel and substantially perpendicular to the growth direction during formation of semiconductor crystals, where the ratio of the two thermal gradients (parallel to perpendicular) is less than 10, by, e.g., arrangement of thermal shields outside of the growth chamber.

Inventors:
; ; ;
Issue Date:
Research Org.:
Crystal IS, Inc., Green Island, NY (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1179234
Patent Number(s):
9,028,612
Application Number:
13/173,213
Assignee:
Crystal IS, Inc. (Green Island, NY)
DOE Contract Number:  
FC26-08NT01578
Resource Type:
Patent
Resource Relation:
Patent File Date: 2011 Jun 30
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY

Citation Formats

Bondokov, Robert T, Rao, Shailaja P, Gibb, Shawn Robert, and Schowalter, Leo J. Growth of large aluminum nitride single crystals with thermal-gradient control. United States: N. p., 2015. Web.
Bondokov, Robert T, Rao, Shailaja P, Gibb, Shawn Robert, & Schowalter, Leo J. Growth of large aluminum nitride single crystals with thermal-gradient control. United States.
Bondokov, Robert T, Rao, Shailaja P, Gibb, Shawn Robert, and Schowalter, Leo J. Tue . "Growth of large aluminum nitride single crystals with thermal-gradient control". United States. https://www.osti.gov/servlets/purl/1179234.
@article{osti_1179234,
title = {Growth of large aluminum nitride single crystals with thermal-gradient control},
author = {Bondokov, Robert T and Rao, Shailaja P and Gibb, Shawn Robert and Schowalter, Leo J},
abstractNote = {In various embodiments, non-zero thermal gradients are formed within a growth chamber both substantially parallel and substantially perpendicular to the growth direction during formation of semiconductor crystals, where the ratio of the two thermal gradients (parallel to perpendicular) is less than 10, by, e.g., arrangement of thermal shields outside of the growth chamber.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2015},
month = {5}
}

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An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
journal, May 2006

  • Taniyasu, Yoshitaka; Kasu, Makoto; Makimoto, Toshiki
  • Nature, Vol. 441, Issue 7091, p. 325-328
  • DOI: 10.1038/nature04760

Intentional control of n -type conduction for Si-doped AlN and AlXGa1−XN (0.42⩽x<1)
journal, August 2002

  • Taniyasu, Yoshitaka; Kasu, Makoto; Kobayashi, Naoki
  • Applied Physics Letters, Vol. 81, Issue 7
  • DOI: 10.1063/1.1499738

Chemical Mechanical Polishing of Gallium Nitride
journal, January 2002

  • Tavernier, P. R.; Margalith, T.; Coldren, L. A.
  • Electrochemical and Solid-State Letters, Vol. 5, Issue 8, p. G61-G64
  • DOI: 10.1149/1.1485807

Determination of the concentration of oxygen dissolved in the AlN lattice by hot gas extraction from AlN ceramics
journal, January 1991


Dislocations in GaN-Based Laser Diodes on Epitaxial Lateral Overgrown GaN Layers
journal, November 2001


Radiation induced recombination processes in AIN ceramics
journal, September 2001


Spectral properties of AIN ceramics
conference, February 1997

  • Trinkler, L.; Berzina, Baiba; Sils, Janis
  • International Conference on Advanced Optical Materials and Devices, SPIE Proceedings
  • DOI: 10.1117/12.266513

Stimulated luminescence of AlN ceramics induced by ultraviolet radiation
journal, October 2001


Solid-state lighting: lamps, chips, and materials for tomorrow
journal, May 2004


The nitrogen vacancy in aluminium nitride
journal, January 2006