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Title: Growth of large aluminum nitride single crystals with thermal-gradient control

In various embodiments, non-zero thermal gradients are formed within a growth chamber both substantially parallel and substantially perpendicular to the growth direction during formation of semiconductor crystals, where the ratio of the two thermal gradients (parallel to perpendicular) is less than 10, by, e.g., arrangement of thermal shields outside of the growth chamber.
Inventors:
; ; ;
Issue Date:
OSTI Identifier:
1179234
Assignee:
Crystal IS, Inc. (Green Island, NY) NETL
Patent Number(s):
9,028,612
Application Number:
13/173,213
Contract Number:
FC26-08NT01578
Resource Relation:
Patent File Date: 2011 Jun 30
Research Org:
Crystal IS, Inc., Green Island, NY (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY

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