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Title: Growth of large aluminum nitride single crystals with thermal-gradient control

Abstract

In various embodiments, non-zero thermal gradients are formed within a growth chamber both substantially parallel and substantially perpendicular to the growth direction during formation of semiconductor crystals, where the ratio of the two thermal gradients (parallel to perpendicular) is less than 10, by, e.g., arrangement of thermal shields outside of the growth chamber.

Inventors:
; ; ;
Issue Date:
Research Org.:
Crystal IS, Inc., Green Island, NY (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1179234
Patent Number(s):
9028612
Application Number:
13/173,213
Assignee:
Crystal IS, Inc. (Green Island, NY)
Patent Classifications (CPCs):
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
DOE Contract Number:  
FC26-08NT01578
Resource Type:
Patent
Resource Relation:
Patent File Date: 2011 Jun 30
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY

Citation Formats

Bondokov, Robert T, Rao, Shailaja P, Gibb, Shawn Robert, and Schowalter, Leo J. Growth of large aluminum nitride single crystals with thermal-gradient control. United States: N. p., 2015. Web.
Bondokov, Robert T, Rao, Shailaja P, Gibb, Shawn Robert, & Schowalter, Leo J. Growth of large aluminum nitride single crystals with thermal-gradient control. United States.
Bondokov, Robert T, Rao, Shailaja P, Gibb, Shawn Robert, and Schowalter, Leo J. Tue . "Growth of large aluminum nitride single crystals with thermal-gradient control". United States. https://www.osti.gov/servlets/purl/1179234.
@article{osti_1179234,
title = {Growth of large aluminum nitride single crystals with thermal-gradient control},
author = {Bondokov, Robert T and Rao, Shailaja P and Gibb, Shawn Robert and Schowalter, Leo J},
abstractNote = {In various embodiments, non-zero thermal gradients are formed within a growth chamber both substantially parallel and substantially perpendicular to the growth direction during formation of semiconductor crystals, where the ratio of the two thermal gradients (parallel to perpendicular) is less than 10, by, e.g., arrangement of thermal shields outside of the growth chamber.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2015},
month = {5}
}

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