Growth of large aluminum nitride single crystals with thermal-gradient control

Bondokov, Robert T; Rao, Shailaja P; Gibb, Shawn Robert; Schowalter, Leo J

Title: Growth of large aluminum nitride single crystals with thermal-gradient control

Abstract

In various embodiments, non-zero thermal gradients are formed within a growth chamber both substantially parallel and substantially perpendicular to the growth direction during formation of semiconductor crystals, where the ratio of the two thermal gradients (parallel to perpendicular) is less than 10, by, e.g., arrangement of thermal shields outside of the growth chamber.

Inventors:: Bondokov, Robert T; Rao, Shailaja P; Gibb, Shawn Robert; Schowalter, Leo J

Issue Date:: 2015-05-12

Research Org.:: Crystal IS, Inc., Green Island, NY (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1179234

Patent Number(s):: 9028612

Application Number:: 13/173,213

Assignee:: Crystal IS, Inc. (Green Island, NY)

Patent Classifications (CPCs):: C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

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C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
C30B23/002 - {Controlling or regulating}
C30B23/06 - Heating of the deposition chamber, the substrate or the materials to be evaporated
C30B29/403 - {AIII-nitrides}
C30B23/025 - {characterised by the substrate}

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DOE Contract Number:: FC26-08NT01578

Resource Type:: Patent

Resource Relation:: Patent File Date: 2011 Jun 30

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY

Citation Formats


                    Bondokov, Robert T, Rao, Shailaja P, Gibb, Shawn Robert, and Schowalter, Leo J. Growth of large aluminum nitride single crystals with thermal-gradient control.  United States: N. p., 2015. 
        Web.

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                    Bondokov, Robert T, Rao, Shailaja P, Gibb, Shawn Robert, & Schowalter, Leo J. Growth of large aluminum nitride single crystals with thermal-gradient control.  United States.

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                    Bondokov, Robert T, Rao, Shailaja P, Gibb, Shawn Robert, and Schowalter, Leo J. Tue .  
        "Growth of large aluminum nitride single crystals with thermal-gradient control".  United States.  https://www.osti.gov/servlets/purl/1179234.

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@article{osti_1179234,

  title        = {Growth of large aluminum nitride single crystals with thermal-gradient control},

  author       = {Bondokov, Robert T and Rao, Shailaja P and Gibb, Shawn Robert and Schowalter, Leo J},

  abstractNote = {In various embodiments, non-zero thermal gradients are formed within a growth chamber both substantially parallel and substantially perpendicular to the growth direction during formation of semiconductor crystals, where the ratio of the two thermal gradients (parallel to perpendicular) is less than 10, by, e.g., arrangement of thermal shields outside of the growth chamber.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2015},

  month        = {5}

}

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Indium–Tin Oxide/Al Reflective Electrodes for Ultraviolet Light-Emitting Diodes
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The nitrogen vacancy in aluminium nitride
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Vail, J. M.; Chevrier, D. K.; Pandey, R.
Journal of Physics: Condensed Matter, Vol. 18, Issue 7
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Title: Growth of large aluminum nitride single crystals with thermal-gradient control

Abstract

Citation Formats

Improved dc characteristics of AlGaN/GaN high-electron-mobility transistors on AlN/sapphire templates journal, August 2002

On the preparation, optical properties and electrical behaviour of aluminium nitride journal, April 1967

Pinholes, Dislocations and Strain Relaxation in InGaN journal, January 1998

Characterization of Aluminum Nitride Crystals Grown by Sublimation journal, December 2001

Growth of AlN crystals on AlN/SiC seeds by AlN powder sublimation in nitrogen atmosphere journal, January 2004

Some effects of oxygen impurities on AlN and GaN journal, December 2002

DX -center formation in wurtzite and zinc-blende Al x Ga 1 − x N journal, January 1998

Effect of point defects on the decay of the longitudinal optical mode journal, May 2002

Photoluminescence studies of impurity transitions in AlGaN alloys journal, August 2006

Codoping method for the fabrication of low-resistivity wide band-gap semiconductors in p-type GaN, p-type AlN and n-type diamond: prediction versus experiment journal, September 2001

Theoretical investigation of native defects, impurities, and complexes in aluminum nitride journal, April 2002

Deep-ultraviolet emission of AlGaN/AlN quantum wells on bulk AlN journal, December 2002

Enhancement of near-UV GaN LED light extraction efficiency by GaN/sapphire template patterning journal, July 2012

F-Type Centers in Neutron-Irradiated AIN journal, January 1990

Sublimation growth and characterization of bulk aluminum nitride single crystals journal, August 1997

Ir/Ag reflector for high-performance GaN-based near UV light emitting diodes journal, August 2006

Polarization-dependent below band-gap optical absorption of aluminum nitride bulk crystals journal, April 2008

PVT growth of bulk AlN crystals with low oxygen contamination journal, December 2003

Characterization of bulk AlN with low oxygen content journal, September 2004

Point defect content and optical transitions in bulk aluminum nitride crystals journal, June 2009

Deep level defects and doping in high Al mole fraction AlGaN journal, January 2003

Optical constants of epitaxial AlGaN films and their temperature dependence journal, November 1997

Light Output Enhancement of UV Light-Emitting Diodes With Embedded Distributed Bragg Reflector journal, May 2011

Structural and optical properties of near-UV LEDs grown on V-grooved sapphire substrates fabricated by wet etching journal, January 2007

Milliwatt power AlGaN quantum well deep ultraviolet light emitting diodes journal, November 2003

Efficiency enhancement of UV/blue light emitting diodes via nanoscaled epitaxial lateral overgrowth of GaN on a SiO2 nanorod-array patterned sapphire substrate journal, November 2008

Lattice Vibration Spectra of Aluminum Nitride journal, June 1967

Phase equilibria pertinent to the growth of cubic boron nitride journal, May 1972

Ultraviolet electroluminescence from ordered ZnO nanorod array/p-GaN light emitting diodes journal, April 2012

The estimation of maximum growth rate for aluminium nitride crystals grown by direct sublimation journal, November 1992

The synthesis of aluminum nitride single crystals journal, March 1974

Sublimation Growth of Bulk AlN Crystals: Materials Compatibility and Crystal Quality journal, January 2002

Properties of Bulk AlN grown by thermodecomposition of AlCl3⋅NH3 journal, September 2003

Shallow donors in GaN journal, November 2003

Optical studies of bulk and homoepitaxial films of III–V nitride semiconductors journal, July 2005

Electrical conductivity of materials from mixed aluminum and silicon nitrides journal, November 1970

The formation of nanopipes caused by donor impurities in GaN: A theoretical study for the case of oxygen journal, March 1999

AlGaN-Based 355 nm UV Light-Emitting Diodes with High Power Efficiency journal, February 2012

Photoluminescence Intensity and Spectral Distribution of GaN Films on SiC Substrates — The Dependence on Dislocation Density and Structure journal, November 1999

Electron Paramagnetic Center in Neutron-Irradiated AlN journal, April 1990

Enhanced light output of GaN-based near-UV light-emitting diodes by using nanopatterned indium tin oxide electrodes journal, March 2006

Fabrication of moth-eye structure on p-GaN layer of GaN-based LEDs for improvement of light extraction journal, July 2009

Study of cathodoluminescence spectroscopy of aluminum nitride conference, September 1996

Improvement of Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes journal, November 2011

Improvement of light extraction efficiency of UV-LED grown on low-dislocation-density AlGaN journal, November 2003

InGaN/AlGaN Ultraviolet Light-Emitting Diode with a Ti 3 O 5 /Al 2 O 3 Distributed Bragg Reflector journal, December 2008

Optical properties of AlN determined by vacuum ultraviolet spectroscopy and spectroscopic ellipsometry data journal, November 1999

n-type AlN layer by Si ion implantation journal, May 2006

The luminescence properties of AlN with manganese and rare earth activators under ultraviolet and cathode-ray excitation journal, January 1970

Equilibrium pressure of N2 over GaN and high pressure solution growth of GaN journal, January 1984

Sublimation Growth of AlN in Vacuum and in a Gas Atmosphere journal, November 1999

Formation of Solid Solution of Al1-xSixN (0<x≤ 12%) Ternary Alloy journal, October 2001

High-Efficiency Nitride-Based Light-Emitting Diodes with Moth-Eye Structure journal, October 2005

Oxygen behavior in aluminum nitride journal, November 2005

Phonon dynamics in AlN lattice contaminated by oxygen journal, October 2006

Enhancement of light extraction efficiency of ultraviolet light emitting diodes by patterning of SiO2 nanosphere arrays journal, February 2009

The BeO — MgO system journal, January 1964

Thick AlN layers grown by HVPE journal, July 2005

Light extraction analysis of GaN-based light-emitting diodes with surface texture and/or patterned substrate journal, January 2007

A Global Growth Rate Model for Aluminum Nitride Sublimation journal, January 2002

Misfit Dislocation Generation in InGaN Epilayers on Free-Standing GaN journal, June 2006

Enhancement of light extraction in ultraviolet light-emitting diodes using nanopixel contact design with Al reflector journal, February 2010

Enhancement of (AlGaIn)N near-UV LED efficiency using freestanding GaN substrate journal, May 2008

Optically detected electron paramagnetic resonance of AlN single crystals journal, January 1999

Defects in epitaxial multilayers: I. Misfit dislocations journal, December 1974

Defects and defect identification in group III-nitrides journal, February 2000

Sublimation growth of AlN bulk crystals in Ta crucibles journal, July 2005

Optical Absorption and Cathodoluminescence of Epitaxial Aluminum Nitride Films journal, July 1982

Electron Spin Resonance Analysis of Lattice Defects in Polycrystalline Aluminum Nitride journal, June 1997

Effects of Al composition on luminescence properties of europium implanted AlxGa1−xN (0 ≤ x ≤ 1) journal, December 2003

Photoluminescence studies of impurity transitions in Mg-doped AlGaN alloys journal, March 2009

Deep impurity transitions involving cation vacancies and complexes in AlGaN alloys journal, May 2005

Optical properties of the nitrogen vacancy in AlN epilayers journal, February 2004

Li3[ScN2]: The First Nitridoscandate(III)—Tetrahedral Sc Coordination and Unusual MX2 Framework journal, September 2003

Recent Developments in Nitride Chemistry journal, October 1998

340–350 nm GaN-free UV-LEDs journal, November 2003

AlGaN-based ultraviolet light-emitting diodes grown on bulk AlN substrates journal, February 2004

Improved dc characteristics of AlGaN/GaN high-electron-mobility transistors on AlN/sapphire templates
journal, August 2002

On the preparation, optical properties and electrical behaviour of aluminium nitride
journal, April 1967

Pinholes, Dislocations and Strain Relaxation in InGaN
journal, January 1998

Characterization of Aluminum Nitride Crystals Grown by Sublimation
journal, December 2001

Growth of AlN crystals on AlN/SiC seeds by AlN powder sublimation in nitrogen atmosphere
journal, January 2004

Some effects of oxygen impurities on AlN and GaN
journal, December 2002

$DX$ -center formation in wurtzite and zinc-blende ${Al}_{x} {Ga}_{1 - x} N$
journal, January 1998

Effect of point defects on the decay of the longitudinal optical mode
journal, May 2002

Photoluminescence studies of impurity transitions in AlGaN alloys
journal, August 2006

Codoping method for the fabrication of low-resistivity wide band-gap semiconductors in p-type GaN, p-type AlN and n-type diamond: prediction versus experiment
journal, September 2001

Theoretical investigation of native defects, impurities, and complexes in aluminum nitride
journal, April 2002

Deep-ultraviolet emission of AlGaN/AlN quantum wells on bulk AlN
journal, December 2002

Enhancement of near-UV GaN LED light extraction efficiency by GaN/sapphire template patterning
journal, July 2012

F-Type Centers in Neutron-Irradiated AIN
journal, January 1990

Sublimation growth and characterization of bulk aluminum nitride single crystals
journal, August 1997

Ir/Ag reflector for high-performance GaN-based near UV light emitting diodes
journal, August 2006

Polarization-dependent below band-gap optical absorption of aluminum nitride bulk crystals
journal, April 2008

PVT growth of bulk AlN crystals with low oxygen contamination
journal, December 2003

Characterization of bulk AlN with low oxygen content
journal, September 2004

Point defect content and optical transitions in bulk aluminum nitride crystals
journal, June 2009

Deep level defects and doping in high Al mole fraction AlGaN
journal, January 2003

Optical constants of epitaxial AlGaN films and their temperature dependence
journal, November 1997

Light Output Enhancement of UV Light-Emitting Diodes With Embedded Distributed Bragg Reflector
journal, May 2011

Structural and optical properties of near-UV LEDs grown on V-grooved sapphire substrates fabricated by wet etching
journal, January 2007

Milliwatt power AlGaN quantum well deep ultraviolet light emitting diodes
journal, November 2003

Efficiency enhancement of UV/blue light emitting diodes via nanoscaled epitaxial lateral overgrowth of GaN on a SiO₂ nanorod-array patterned sapphire substrate
journal, November 2008

Lattice Vibration Spectra of Aluminum Nitride
journal, June 1967

Phase equilibria pertinent to the growth of cubic boron nitride
journal, May 1972

Ultraviolet electroluminescence from ordered ZnO nanorod array/p-GaN light emitting diodes
journal, April 2012

The estimation of maximum growth rate for aluminium nitride crystals grown by direct sublimation
journal, November 1992

The synthesis of aluminum nitride single crystals
journal, March 1974

Sublimation Growth of Bulk AlN Crystals: Materials Compatibility and Crystal Quality
journal, January 2002

Properties of Bulk AlN grown by thermodecomposition of AlCl₃⋅NH₃
journal, September 2003

Shallow donors in GaN
journal, November 2003

Optical studies of bulk and homoepitaxial films of III–V nitride semiconductors
journal, July 2005

Electrical conductivity of materials from mixed aluminum and silicon nitrides
journal, November 1970

The formation of nanopipes caused by donor impurities in GaN: A theoretical study for the case of oxygen
journal, March 1999

AlGaN-Based 355 nm UV Light-Emitting Diodes with High Power Efficiency
journal, February 2012

Photoluminescence Intensity and Spectral Distribution of GaN Films on SiC Substrates — The Dependence on Dislocation Density and Structure
journal, November 1999

Electron Paramagnetic Center in Neutron-Irradiated AlN
journal, April 1990

Enhanced light output of GaN-based near-UV light-emitting diodes by using nanopatterned indium tin oxide electrodes
journal, March 2006

Fabrication of moth-eye structure on p-GaN layer of GaN-based LEDs for improvement of light extraction
journal, July 2009

Study of cathodoluminescence spectroscopy of aluminum nitride
conference, September 1996

Improvement of Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes
journal, November 2011

Improvement of light extraction efficiency of UV-LED grown on low-dislocation-density AlGaN
journal, November 2003

InGaN/AlGaN Ultraviolet Light-Emitting Diode with a Ti ₃ O ₅ /Al ₂ O ₃ Distributed Bragg Reflector
journal, December 2008

Optical properties of AlN determined by vacuum ultraviolet spectroscopy and spectroscopic ellipsometry data
journal, November 1999

n-type AlN layer by Si ion implantation
journal, May 2006

The luminescence properties of AlN with manganese and rare earth activators under ultraviolet and cathode-ray excitation
journal, January 1970

Equilibrium pressure of N₂ over GaN and high pressure solution growth of GaN
journal, January 1984

Sublimation Growth of AlN in Vacuum and in a Gas Atmosphere
journal, November 1999

Formation of Solid Solution of Al1-xSixN (0<x≤ 12%) Ternary Alloy
journal, October 2001

High-Efficiency Nitride-Based Light-Emitting Diodes with Moth-Eye Structure
journal, October 2005

Oxygen behavior in aluminum nitride
journal, November 2005

Phonon dynamics in AlN lattice contaminated by oxygen
journal, October 2006

Enhancement of light extraction efficiency of ultraviolet light emitting diodes by patterning of SiO₂ nanosphere arrays
journal, February 2009

The BeO — MgO system
journal, January 1964

Thick AlN layers grown by HVPE
journal, July 2005

Light extraction analysis of GaN-based light-emitting diodes with surface texture and/or patterned substrate
journal, January 2007

A Global Growth Rate Model for Aluminum Nitride Sublimation
journal, January 2002

Misfit Dislocation Generation in InGaN Epilayers on Free-Standing GaN
journal, June 2006

Enhancement of light extraction in ultraviolet light-emitting diodes using nanopixel contact design with Al reflector
journal, February 2010

Enhancement of (AlGaIn)N near-UV LED efficiency using freestanding GaN substrate
journal, May 2008

Optically detected electron paramagnetic resonance of AlN single crystals
journal, January 1999

Defects in epitaxial multilayers: I. Misfit dislocations
journal, December 1974

Defects and defect identification in group III-nitrides
journal, February 2000

Sublimation growth of AlN bulk crystals in Ta crucibles
journal, July 2005

Optical Absorption and Cathodoluminescence of Epitaxial Aluminum Nitride Films
journal, July 1982

Electron Spin Resonance Analysis of Lattice Defects in Polycrystalline Aluminum Nitride
journal, June 1997

Effects of Al composition on luminescence properties of europium implanted Al_xGa_1−xN (0 ≤ x ≤ 1)
journal, December 2003

Photoluminescence studies of impurity transitions in Mg-doped AlGaN alloys
journal, March 2009

Deep impurity transitions involving cation vacancies and complexes in AlGaN alloys
journal, May 2005

Optical properties of the nitrogen vacancy in AlN epilayers
journal, February 2004

Li3[ScN2]: The First Nitridoscandate(III)—Tetrahedral Sc Coordination and Unusual MX2 Framework
journal, September 2003

Recent Developments in Nitride Chemistry
journal, October 1998

340–350 nm GaN-free UV-LEDs
journal, November 2003

AlGaN-based ultraviolet light-emitting diodes grown on bulk AlN substrates
journal, February 2004

Mass transfer in AlN crystal growth at high temperatures
journal, March 2004

Correlation between biaxial stress and free exciton transition in AlN epilayers
journal, September 2007

Study on photoluminescence of GaN-based UV-LEDs with refractive index gradient polymeric nanopatterns
journal, July 2011