Growth of large aluminum nitride single crystals with thermal-gradient control
Abstract
In various embodiments, non-zero thermal gradients are formed within a growth chamber both substantially parallel and substantially perpendicular to the growth direction during formation of semiconductor crystals, where the ratio of the two thermal gradients (parallel to perpendicular) is less than 10, by, e.g., arrangement of thermal shields outside of the growth chamber.
- Inventors:
- Issue Date:
- Research Org.:
- Crystal IS, Inc., Green Island, NY (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1179234
- Patent Number(s):
- 9028612
- Application Number:
- 13/173,213
- Assignee:
- Crystal IS, Inc. (Green Island, NY)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
- DOE Contract Number:
- FC26-08NT01578
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2011 Jun 30
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
Citation Formats
Bondokov, Robert T, Rao, Shailaja P, Gibb, Shawn Robert, and Schowalter, Leo J. Growth of large aluminum nitride single crystals with thermal-gradient control. United States: N. p., 2015.
Web.
Bondokov, Robert T, Rao, Shailaja P, Gibb, Shawn Robert, & Schowalter, Leo J. Growth of large aluminum nitride single crystals with thermal-gradient control. United States.
Bondokov, Robert T, Rao, Shailaja P, Gibb, Shawn Robert, and Schowalter, Leo J. Tue .
"Growth of large aluminum nitride single crystals with thermal-gradient control". United States. https://www.osti.gov/servlets/purl/1179234.
@article{osti_1179234,
title = {Growth of large aluminum nitride single crystals with thermal-gradient control},
author = {Bondokov, Robert T and Rao, Shailaja P and Gibb, Shawn Robert and Schowalter, Leo J},
abstractNote = {In various embodiments, non-zero thermal gradients are formed within a growth chamber both substantially parallel and substantially perpendicular to the growth direction during formation of semiconductor crystals, where the ratio of the two thermal gradients (parallel to perpendicular) is less than 10, by, e.g., arrangement of thermal shields outside of the growth chamber.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2015},
month = {5}
}
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