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Title: Memristor comprising film with comb-like structure of nanocolumns of metal oxide embedded in a metal oxide matrix

Films having a comb-like structure of nanocolumns of Sm.sub.2O.sub.3 embedded in a SrTiO.sub.3 formed spontaneously on a substrate surface by pulsed laser deposition. In an embodiment, the nanocolumns had a width of about 20 nm with spaces between nanocolumns of about 10 nm. The films exhibited memristive behavior, and were extremely uniform and tunable. Oxygen deficiencies were located at vertical interfaces between the nanocolumns and the matrix. The substrates may be single-layered or multilayered.
Inventors:
; ;
Issue Date:
OSTI Identifier:
1179223
Assignee:
Los Alamos National Security, LLC (Los Alamos, NM) LANL
Patent Number(s):
9,029,985
Application Number:
14/282,910
Contract Number:
AC52-06NA25396
Resource Relation:
Patent File Date: 2014 May 20
Research Org:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY

Other works cited in this record:

Oxide Double-Layer Nanocrossbar for Ultrahigh-Density Bipolar Resistive Memory
journal, August 2011
  • Chang, Seo Hyoung; Lee, Shin Buhm; Jeon, Dae Young
  • Advanced Materials, Vol. 23, Issue 35, p. 4063-4067
  • DOI: 10.1002/adma.201102395

Local Conduction at the BiFeO3-CoFe2O4 Tubular Oxide Interface
journal, July 2012
  • Hsieh, Ying-Hui; Liou, Jia-Ming; Huang, Bo-Chao
  • Advanced Materials, Vol. 24, Issue 33, p. 4564-4568
  • DOI: 10.1002/adma.201201929

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
journal, July 2011
  • Lee, Myoung-Jae; Lee, Chang Bum; Lee, Dongsoo
  • Nature Materials, Vol. 10, Issue 8, p. 625-630
  • DOI: 10.1038/nmat3070

Coexistence of Filamentary and Homogeneous Resistive Switching in Fe-Doped SrTiO3 Thin-Film Memristive Devices
journal, August 2010
  • Muenstermann, Ruth; Menke, Tobias; Dittmann, Regina
  • Advanced Materials, Vol. 22, Issue 43, p. 4819-4822
  • DOI: 10.1002/adma.201001872

Impact of Defect Distribution on Resistive Switching Characteristics of Sr2TiO4 Thin Films
journal, January 2010
  • Shibuya, Keisuke; Dittmann, Regina; Mi, Shaobo
  • Advanced Materials, Vol. 22, Issue 3, p. 411-414
  • DOI: 10.1002/adma.200901493

Direct Identification of the Conducting Channels in a Functioning Memristive Device
journal, June 2010
  • Strachan, John Paul; Pickett, Matthew D.; Yang, J. Joshua
  • Advanced Materials, Vol. 22, Issue 32, p. 3573-3577
  • DOI: 10.1002/adma.201000186

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
journal, July 2009
  • Waser, Rainer; Dittmann, Regina; Staikov, Georgi
  • Advanced Materials, Vol. 21, Issue 25-26, p. 2632-2663
  • DOI: 10.1002/adma.200900375

Memristive devices for computing
journal, January 2013
  • Yang, J. Joshua; Strukov, Dmitri B.; Stewart, Duncan R.
  • Nature Nanotechnology, Vol. 8, Issue 1, p. 13-24
  • DOI: 10.1038/nnano.2012.240

Materials for fuel-cell technologies
journal, November 2001
  • Steele, Brian C. H.; Heinzel, Angelika
  • Nature, Vol. 414, Issue 6861, p. 345-352
  • DOI: 10.1038/35104620

STEM-EELS imaging of complex oxides and interfaces
journal, January 2012
  • Varela, Maria; Gazquez, Jaume; Pennycook, Stephen J.
  • MRS Bulletin, Vol. 37, Issue 01, p. 29-35
  • DOI: 10.1557/mrs.2011.330

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