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Title: Ultratough single crystal boron-doped diamond

The invention relates to a single crystal boron doped CVD diamond that has a toughness of at least about 22 MPa m.sup.1/2. The invention further relates to a method of manufacturing single crystal boron doped CVD diamond. The growth rate of the diamond can be from about 20-100 .mu.m/h.
Inventors:
 [1];  [1];  [1];  [1]
  1. Carnegie Inst. for Science, Washington, DC (United States)
Issue Date:
OSTI Identifier:
1179032
Assignee:
Carnegie Institution of Washington (Washington, DC) Y-12
Patent Number(s):
9,023,306
Application Number:
12/435,565
Resource Relation:
Patent File Date: 2009 May 05
Research Org:
Carnegie Institution of Washington, Washington, DC (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Works referenced in this record:

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