skip to main content
DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Ultratough single crystal boron-doped diamond

Abstract

The invention relates to a single crystal boron doped CVD diamond that has a toughness of at least about 22 MPa m.sup.1/2. The invention further relates to a method of manufacturing single crystal boron doped CVD diamond. The growth rate of the diamond can be from about 20-100 .mu.m/h.

Inventors:
 [1];  [1];  [1];  [1]
  1. Carnegie Inst. for Science, Washington, DC (United States)
Issue Date:
Research Org.:
Carnegie Inst. of Washington, Washington, DC (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1179032
Patent Number(s):
9023306
Application Number:
12/435,565
Assignee:
Carnegie Institution of Washington (Washington, DC)
Patent Classifications (CPCs):
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
Resource Type:
Patent
Resource Relation:
Patent File Date: 2009 May 05
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Hemley, Russell J, Mao, Ho-Kwang, Yan, Chih-Shiue, and Liang, Qi. Ultratough single crystal boron-doped diamond. United States: N. p., 2015. Web.
Hemley, Russell J, Mao, Ho-Kwang, Yan, Chih-Shiue, & Liang, Qi. Ultratough single crystal boron-doped diamond. United States.
Hemley, Russell J, Mao, Ho-Kwang, Yan, Chih-Shiue, and Liang, Qi. Tue . "Ultratough single crystal boron-doped diamond". United States. https://www.osti.gov/servlets/purl/1179032.
@article{osti_1179032,
title = {Ultratough single crystal boron-doped diamond},
author = {Hemley, Russell J and Mao, Ho-Kwang and Yan, Chih-Shiue and Liang, Qi},
abstractNote = {The invention relates to a single crystal boron doped CVD diamond that has a toughness of at least about 22 MPa m.sup.1/2. The invention further relates to a method of manufacturing single crystal boron doped CVD diamond. The growth rate of the diamond can be from about 20-100 .mu.m/h.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2015},
month = {5}
}

Patent:

Save / Share:

Works referenced in this record:

Optical-quality diamond growth from CO2-containing gas chemistries
journal, March 1999


Effect of oxygen addition on microwave plasma CVD of diamond from CH4-H2 mixture
journal, January 1989


The effect of carbon and nitrogen implantation on the abrasion resistance of type IIa (110) diamond
journal, January 1993

  • Anderson, Gregory C.; Prawer, Steven; Johnston, Peter
  • Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 80-81, p. 1451-1455
  • https://doi.org/10.1016/0168-583X(93)90818-Q

A Critical Evaluation of Indentation Techniques for Measuring Fracture Toughness: I, Direct Crack Measurements
journal, September 1981


Stresses generated by inhomogeneous distributions of inclusions in diamonds
journal, January 1997


What does 'harder than diamond' mean?
journal, September 2004


Growth-sector dependence of optical features in large synthetic diamonds
journal, July 1990


Characterization of nitrogen doped chemical vapor deposited single crystal diamond before and after high pressure, high temperature annealing
journal, September 2004


Computational studies of elementary steps relating to boron doping during diamond chemical vapour deposition
journal, January 2005


Boron, the Dominant Acceptor in Semiconducting Diamond
journal, May 1973


The toughness of free-standing CVD diamond
journal, March 2004


Fracture of synthetic diamond
journal, September 1995


Boron-related infra-red absorption in homoepitaxial diamond films
journal, October 1998


Accurate measurement of fracture toughness of free standing diamond films by three-point bending tests with sharp pre-cracked specimens
journal, September 2000


Effect of nitrogen addition on the morphology and structure of boron-doped nanostructured diamond films
journal, December 2003


Enhancing the mechanical properties of single-crystal CVD diamond
journal, August 2009


Optical and electrical characterization of boron-doped diamond films
journal, May 1995


Enhanced optical properties of chemical vapor deposited single crystal diamond by low-pressure/high-temperature annealing
journal, November 2008


Morphology of heavily B-doped diamond films
journal, November 1993


Direct evidence of interaction between dislocations and point defects in diamond
journal, May 2005


Mechanical properties of diamond and cubic BN at different temperatures and deformation rates
journal, July 1993


Potential for diamond fibres and diamond fibre composites
journal, June 1994


On the Vickers Indentation Fracture Toughness Test
journal, March 2007


Structural changes in CVD diamond film by boron and nitrogen doping
journal, April 2000


Indentation hardness of nano-polycrystalline diamond prepared from graphite by direct conversion
journal, October 2004


Theoretical Strength and Cleavage of Diamond
journal, May 2000


Sintered Superhard Materials
journal, May 1980


Very high growth rate chemical vapor deposition of single-crystal diamond
journal, September 2002


Ultrahard diamond single crystals from chemical vapor deposition
journal, March 2004