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Title: Field-effect P-N junction

Abstract

This disclosure provides systems, methods, and apparatus related to field-effect p-n junctions. In one aspect, a device includes an ohmic contact, a semiconductor layer disposed on the ohmic contact, at least one rectifying contact disposed on the semiconductor layer, a gate including a layer disposed on the at least one rectifying contact and the semiconductor layer and a gate contact disposed on the layer. A lateral width of the rectifying contact is less than a semiconductor depletion width of the semiconductor layer. The gate contact is electrically connected to the ohmic contact to create a self-gating feedback loop that is configured to maintain a gate electric field of the gate.

Inventors:
;
Issue Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1179021
Patent Number(s):
9,024,367
Application Number:
13/773,985
Assignee:
The Regents of the University of California (Oakland, CA)
DOE Contract Number:  
AC02-05CH11231
Resource Type:
Patent
Resource Relation:
Patent File Date: 2013 Feb 22
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 14 SOLAR ENERGY

Citation Formats

Regan, William, and Zettl, Alexander. Field-effect P-N junction. United States: N. p., 2015. Web.
Regan, William, & Zettl, Alexander. Field-effect P-N junction. United States.
Regan, William, and Zettl, Alexander. Tue . "Field-effect P-N junction". United States. https://www.osti.gov/servlets/purl/1179021.
@article{osti_1179021,
title = {Field-effect P-N junction},
author = {Regan, William and Zettl, Alexander},
abstractNote = {This disclosure provides systems, methods, and apparatus related to field-effect p-n junctions. In one aspect, a device includes an ohmic contact, a semiconductor layer disposed on the ohmic contact, at least one rectifying contact disposed on the semiconductor layer, a gate including a layer disposed on the at least one rectifying contact and the semiconductor layer and a gate contact disposed on the layer. A lateral width of the rectifying contact is less than a semiconductor depletion width of the semiconductor layer. The gate contact is electrically connected to the ohmic contact to create a self-gating feedback loop that is configured to maintain a gate electric field of the gate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2015},
month = {5}
}

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