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Title: Field-effect P-N junction

This disclosure provides systems, methods, and apparatus related to field-effect p-n junctions. In one aspect, a device includes an ohmic contact, a semiconductor layer disposed on the ohmic contact, at least one rectifying contact disposed on the semiconductor layer, a gate including a layer disposed on the at least one rectifying contact and the semiconductor layer and a gate contact disposed on the layer. A lateral width of the rectifying contact is less than a semiconductor depletion width of the semiconductor layer. The gate contact is electrically connected to the ohmic contact to create a self-gating feedback loop that is configured to maintain a gate electric field of the gate.
Inventors:
;
Issue Date:
OSTI Identifier:
1179021
Assignee:
The Regents of the University of California (Oakland, CA) CHO
Patent Number(s):
9,024,367
Application Number:
13/773,985
Contract Number:
AC02-05CH11231
Resource Relation:
Patent File Date: 2013 Feb 22
Research Org:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 14 SOLAR ENERGY

Other works cited in this record:

Experimental realization of field effect a-Si:H solar cells
journal, March 2003

Photon-induced degradation in metal–insulator–semiconductor solar cells
journal, November 2001

Computer analysis of induced-inversion layer MOS solar cells
journal, March 1984

Influence of external bias on photoelectric properties of silicon MIS/IL structures
journal, June 1998

Current transport in metal-semiconductor barriers
journal, November 1966

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