Solar cell with silicon oxynitride dielectric layer
Abstract
Solar cells with silicon oxynitride dielectric layers and methods of forming silicon oxynitride dielectric layers for solar cell fabrication are described. For example, an emitter region of a solar cell includes a portion of a substrate having a back surface opposite a light receiving surface. A silicon oxynitride (SiO.sub.xN.sub.y, 0
- Inventors:
- Issue Date:
- Research Org.:
- SunPower Corporation, San Jose, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1178674
- Patent Number(s):
- 9018516
- Application Number:
- 13/720,417
- Assignee:
- SunPower Corporation (San Jose, CA)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- FC36-07GO17043
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2012 Dec 19
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; 36 MATERIALS SCIENCE
Citation Formats
Shepherd, Michael, and Smith, David D. Solar cell with silicon oxynitride dielectric layer. United States: N. p., 2015.
Web.
Shepherd, Michael, & Smith, David D. Solar cell with silicon oxynitride dielectric layer. United States.
Shepherd, Michael, and Smith, David D. Tue .
"Solar cell with silicon oxynitride dielectric layer". United States. https://www.osti.gov/servlets/purl/1178674.
@article{osti_1178674,
title = {Solar cell with silicon oxynitride dielectric layer},
author = {Shepherd, Michael and Smith, David D},
abstractNote = {Solar cells with silicon oxynitride dielectric layers and methods of forming silicon oxynitride dielectric layers for solar cell fabrication are described. For example, an emitter region of a solar cell includes a portion of a substrate having a back surface opposite a light receiving surface. A silicon oxynitride (SiO.sub.xN.sub.y, 0},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2015},
month = {4}
}
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Works referenced in this record:
Trench process and structure for backside contact solar cells with polysilicon doped regions
patent, October 2010
- Smith, David D.
- US Patent Document 7,812,250
Simplified Back Contact for Polysilicon Emitter Solar Cells
patent-application, December 2009
- Borden, Peter G.; Xu, Li
- US Patent Application 12/421570; 20090314341