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Title: Solar cell with silicon oxynitride dielectric layer

Abstract

Solar cells with silicon oxynitride dielectric layers and methods of forming silicon oxynitride dielectric layers for solar cell fabrication are described. For example, an emitter region of a solar cell includes a portion of a substrate having a back surface opposite a light receiving surface. A silicon oxynitride (SiO.sub.xN.sub.y, 0

Inventors:
;
Issue Date:
Research Org.:
SunPower Corporation, San Jose, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1178674
Patent Number(s):
9018516
Application Number:
13/720,417
Assignee:
SunPower Corporation (San Jose, CA)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
DOE Contract Number:  
FC36-07GO17043
Resource Type:
Patent
Resource Relation:
Patent File Date: 2012 Dec 19
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE

Citation Formats

Shepherd, Michael, and Smith, David D. Solar cell with silicon oxynitride dielectric layer. United States: N. p., 2015. Web.
Shepherd, Michael, & Smith, David D. Solar cell with silicon oxynitride dielectric layer. United States.
Shepherd, Michael, and Smith, David D. Tue . "Solar cell with silicon oxynitride dielectric layer". United States. https://www.osti.gov/servlets/purl/1178674.
@article{osti_1178674,
title = {Solar cell with silicon oxynitride dielectric layer},
author = {Shepherd, Michael and Smith, David D},
abstractNote = {Solar cells with silicon oxynitride dielectric layers and methods of forming silicon oxynitride dielectric layers for solar cell fabrication are described. For example, an emitter region of a solar cell includes a portion of a substrate having a back surface opposite a light receiving surface. A silicon oxynitride (SiO.sub.xN.sub.y, 0},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2015},
month = {4}
}

Patent:

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