Deposition of dopant impurities and pulsed energy drive-in
Abstract
A semiconductor doping process which enhances the dopant incorporation achievable using the Gas Immersion Laser Doping (GILD) technique. The enhanced doping is achieved by first depositing a thin layer of dopant atoms on a semiconductor surface followed by exposure to one or more pulses from either a laser or an ion-beam which melt a portion of the semiconductor to a desired depth, thus causing the dopant atoms to be incorporated into the molten region. After the molten region recrystallizes the dopant atoms are electrically active. The dopant atoms are deposited by plasma enhanced chemical vapor deposition (PECVD) or other known deposition techniques.
- Inventors:
- Issue Date:
- Research Org.:
- Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1176707
- Patent Number(s):
- RE39988
- Application Number:
- 10/768,656; 5,918,140
- Assignee:
- The Regents of the University of California (Oakland, CA)
- DOE Contract Number:
- W-7405-ENG-48
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2001 Jun 29
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Wickboldt, Paul, Carey, Paul G., Smith, Patrick M., and Ellingboe, Albert R. Deposition of dopant impurities and pulsed energy drive-in. United States: N. p., 2008.
Web.
Wickboldt, Paul, Carey, Paul G., Smith, Patrick M., & Ellingboe, Albert R. Deposition of dopant impurities and pulsed energy drive-in. United States.
Wickboldt, Paul, Carey, Paul G., Smith, Patrick M., and Ellingboe, Albert R. Tue .
"Deposition of dopant impurities and pulsed energy drive-in". United States. https://www.osti.gov/servlets/purl/1176707.
@article{osti_1176707,
title = {Deposition of dopant impurities and pulsed energy drive-in},
author = {Wickboldt, Paul and Carey, Paul G. and Smith, Patrick M. and Ellingboe, Albert R.},
abstractNote = {A semiconductor doping process which enhances the dopant incorporation achievable using the Gas Immersion Laser Doping (GILD) technique. The enhanced doping is achieved by first depositing a thin layer of dopant atoms on a semiconductor surface followed by exposure to one or more pulses from either a laser or an ion-beam which melt a portion of the semiconductor to a desired depth, thus causing the dopant atoms to be incorporated into the molten region. After the molten region recrystallizes the dopant atoms are electrically active. The dopant atoms are deposited by plasma enhanced chemical vapor deposition (PECVD) or other known deposition techniques.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2008},
month = {1}
}
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