Methods for forming thin-film heterojunction solar cells from I-III-VI2

Mickelsen, Reid A.; Chen, Wen S.

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Title: Methods for forming thin-film heterojunction solar cells from I-III-VI₂

Abstract

An improved thin-film, large area solar cell, and methods for forming the same, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI₂ chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order of about 2.5 microns to about 5.0 microns (≅2.5 $$\mu$$m to .congruent.5.0 .mu.m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the

Inventors:: Mickelsen, Reid A.; Chen, Wen S.

Issue Date:: Tue Aug 13 00:00:00 EDT 1985

Research Org.:: The Boeing Company, Seattle, WA (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1176687

Patent Number(s):: RE31968

Application Number:: 06/620,637

Assignee:: The Boeing Company (Seattle, WA)

DOE Contract Number:: EG-77-C-01-4042; XJ-9-8021-1

Resource Type:: Patent

Resource Relation:: Patent File Date: 1984 Jun 14

Country of Publication:: United States

Language:: English

Subject:: 14 SOLAR ENERGY; 36 MATERIALS SCIENCE

Citation Formats


                    Mickelsen, Reid A., and Chen, Wen S. Methods for forming thin-film heterojunction solar cells from I-III-VI2.  United States: N. p., 1985. 
        Web.

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                    Mickelsen, Reid A., & Chen, Wen S. Methods for forming thin-film heterojunction solar cells from I-III-VI2.  United States.

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                    Mickelsen, Reid A., and Chen, Wen S. Tue .  
        "Methods for forming thin-film heterojunction solar cells from I-III-VI2".  United States.  https://www.osti.gov/servlets/purl/1176687.

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@article{osti_1176687,

  title        = {Methods for forming thin-film heterojunction solar cells from I-III-VI2},

  author       = {Mickelsen, Reid A. and Chen, Wen S.},

  abstractNote = {An improved thin-film, large area solar cell, and methods for forming the same, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order of about 2.5 microns to about 5.0 microns (≅2.5 $\mu$m to .congruent.5.0 .mu.m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {Tue Aug 13 00:00:00 EDT 1985},

  month        = {Tue Aug 13 00:00:00 EDT 1985}

}

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Works referenced in this record:

CuInS ₂ thin‐film homojunction solar cells
journal, July 1977

Kazmerski, L. L.; Sanborn, G. A.
Journal of Applied Physics, Vol. 48, Issue 7
https://doi.org/10.1063/1.324058

Photovoltaic properties and junction formation in CuInSe ₂
journal, June 1977

Tell, B.; Bridenbaugh, P. M.
Journal of Applied Physics, Vol. 48, Issue 6
https://doi.org/10.1063/1.324012

Multicomponent tetrahedral compounds for solar cells
journal, July 1977

Wagner, Sigurd; Bridenbaugh, P. M.
Journal of Crystal Growth, Vol. 39, Issue 1
https://doi.org/10.1016/0022-0248(77)90162-2

Growth of CuInSe₂ films using molecular beam epitaxy
journal, March 1979

White, F. R.; Clark, A. H.; Graf, M. C.
Journal of Vacuum Science and Technology, Vol. 16, Issue 2
https://doi.org/10.1116/1.569928

Photovoltaic properties ofp‐njunctions in CuInS₂
journal, July 1979

Tell, B.; Thiel, F. A.
Journal of Applied Physics, Vol. 50, Issue 7
https://doi.org/10.1063/1.325604

Photovoltaic Effect in CuInSe₂/CdS Heterojunctions
journal, May 1977

Kokubun, Yoshihiro; Wada, Masanobu
Japanese Journal of Applied Physics, Vol. 16, Issue 5
https://doi.org/10.1143/JJAP.16.879

High photocurrent polycrystalline thin‐film CdS/CuInSe₂solar cell^a
journal, March 1980

Mickelsen, R. A.; Chen, Wen S.
Applied Physics Letters, Vol. 36, Issue 5
https://doi.org/10.1063/1.91491

Growth of CuInSe₂on CdS using molecular beam epitaxy
journal, January 1979

White, F. R.; Clark, A. H.; Graf, M. C.
Journal of Applied Physics, Vol. 50, Issue 1
https://doi.org/10.1063/1.325624

Motion of p ‐ n junctions in CuInSe ₂
journal, April 1976

Tell, B.; Wagner, Sigurd; Bridenbaugh, P. M.
Applied Physics Letters, Vol. 28, Issue 8
https://doi.org/10.1063/1.88796

CuInSe ₂ /CdS heterojunction photovoltaic detectors
journal, October 1974

Wagner, Sigurd; Shay, J. L.; Migliorato, P.
Applied Physics Letters, Vol. 25, Issue 8
https://doi.org/10.1063/1.1655537

Growth and characterization of thin‐film compound semiconductor photovoltaic heterojunctions
journal, January 1977

Kazmerski, L. L.; White, F. R.; Ayyagari, M. S.
Journal of Vacuum Science and Technology, Vol. 14, Issue 1
https://doi.org/10.1116/1.569173

Auger electron spectroscopy studies of I–III–VI₂ chalcopyrite compounds
journal, March 1978

Kazmerski, L. L.; Sprague, D. L.; Cooper, R. B.
Journal of Vacuum Science and Technology, Vol. 15, Issue 2
https://doi.org/10.1116/1.569561

Structural and electrical properties of CuInSe2 epitaxial layers prepared by single-source evaporation
journal, December 1980

Neumann, H.; Nowak, E.; Schumann, B.
Thin Solid Films, Vol. 74, Issue 2
https://doi.org/10.1016/0040-6090(80)90081-4

Preparation of amorphous CuInSe2 thin films
journal, June 1980

Durný, R.; Hill, A. E.; Tomlinson, R. D.
Thin Solid Films, Vol. 69, Issue 2
https://doi.org/10.1016/0040-6090(80)90044-9

Thin‐film CuInSe ₂ /CdS heterojunction solar cells
journal, August 1976

Kazmerski, L. L.; White, F. R.; Morgan, G. K.
Applied Physics Letters, Vol. 29, Issue 4
https://doi.org/10.1063/1.89041

Some observations on the effect of evaporation source temperature on the composition of CuInSe2 thin films
journal, January 1980

Tomlinson, R. D.; Omezi, D.; Parkes, J.
Thin Solid Films, Vol. 65, Issue 2
https://doi.org/10.1016/0040-6090(80)90261-8

Auger analysis of CdS—CuInSe₂thin-film solar cells
journal, April 1977

Kazmerski, L. L.; Cooper, R. B.; White, F. R.
IEEE Transactions on Electron Devices, Vol. 24, Issue 4
https://doi.org/10.1109/T-ED.1977.18766

Copper Indium Diselenide for CdS: CuInSe2 Solar Cells
book, January 1981

Don, E. R.; Baber, S. R.; Hill, R.
Photovoltaic Solar Energy Conference
https://doi.org/10.1007/978-94-009-8423-3_147

p −InP/ n −CdS solar cells and photovoltaic detectors
journal, March 1975

Wagner, Sigurd; Shay, J. L.; Bachmann, K. J.
Applied Physics Letters, Vol. 26, Issue 5
https://doi.org/10.1063/1.88131

Efficient CuInSe ₂ /CdS solar cells
journal, July 1975

Shay, J. L.; Wagner, Sigurd; Kasper, H. M.
Applied Physics Letters, Vol. 27, Issue 2
https://doi.org/10.1063/1.88372

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Similar Records

Title: Methods for forming thin-film heterojunction solar cells from I-III-VI2

Abstract

Citation Formats

CuInS 2 thin‐film homojunction solar cells journal, July 1977

Photovoltaic properties and junction formation in CuInSe 2 journal, June 1977

Multicomponent tetrahedral compounds for solar cells journal, July 1977

Growth of CuInSe2 films using molecular beam epitaxy journal, March 1979

Photovoltaic properties ofp‐njunctions in CuInS2 journal, July 1979

Photovoltaic Effect in CuInSe2/CdS Heterojunctions journal, May 1977

High photocurrent polycrystalline thin‐film CdS/CuInSe2solar cella journal, March 1980

Growth of CuInSe2on CdS using molecular beam epitaxy journal, January 1979

Motion of p ‐ n junctions in CuInSe 2 journal, April 1976

CuInSe 2 /CdS heterojunction photovoltaic detectors journal, October 1974

Growth and characterization of thin‐film compound semiconductor photovoltaic heterojunctions journal, January 1977

Auger electron spectroscopy studies of I–III–VI2 chalcopyrite compounds journal, March 1978

Structural and electrical properties of CuInSe2 epitaxial layers prepared by single-source evaporation journal, December 1980

Preparation of amorphous CuInSe2 thin films journal, June 1980

Thin‐film CuInSe 2 /CdS heterojunction solar cells journal, August 1976

Some observations on the effect of evaporation source temperature on the composition of CuInSe2 thin films journal, January 1980

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Title: Methods for forming thin-film heterojunction solar cells from I-III-VI₂

CuInS ₂ thin‐film homojunction solar cells
journal, July 1977

Photovoltaic properties and junction formation in CuInSe ₂
journal, June 1977

Multicomponent tetrahedral compounds for solar cells
journal, July 1977

Growth of CuInSe₂ films using molecular beam epitaxy
journal, March 1979

Photovoltaic properties ofp‐njunctions in CuInS₂
journal, July 1979

Photovoltaic Effect in CuInSe₂/CdS Heterojunctions
journal, May 1977

High photocurrent polycrystalline thin‐film CdS/CuInSe₂solar cell^a
journal, March 1980

Growth of CuInSe₂on CdS using molecular beam epitaxy
journal, January 1979

Motion of p ‐ n junctions in CuInSe ₂
journal, April 1976

CuInSe ₂ /CdS heterojunction photovoltaic detectors
journal, October 1974

Growth and characterization of thin‐film compound semiconductor photovoltaic heterojunctions
journal, January 1977

Auger electron spectroscopy studies of I–III–VI₂ chalcopyrite compounds
journal, March 1978

Structural and electrical properties of CuInSe2 epitaxial layers prepared by single-source evaporation
journal, December 1980

Preparation of amorphous CuInSe2 thin films
journal, June 1980

Thin‐film CuInSe ₂ /CdS heterojunction solar cells
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Some observations on the effect of evaporation source temperature on the composition of CuInSe2 thin films
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p −InP/ n −CdS solar cells and photovoltaic detectors
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Efficient CuInSe ₂ /CdS solar cells
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