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Title: Methods for forming thin-film heterojunction solar cells from I-III-VI.sub. 2

Abstract

An improved thin-film, large area solar cell, and methods for forming the same, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI.sub.2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order ot about 2.5 microns to about 5.0 microns (.congruent.2.5 .mu.m to .congruent.5.0 .mu.m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the The Government has rights in this invention pursuant to Contract No. EG-77-C-01-4042, Subcontract No. XJ-9-8021-1 awarded by the U.S. Department of Energy.

Inventors:
;
Issue Date:
Research Org.:
The Boeing Company, Seattle, WA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1176687
Patent Number(s):
RE31968
Application Number:
06/620,637
Assignee:
The Boeing Company (Seattle, WA)
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE

Citation Formats

Mickelsen, Reid A., and Chen, Wen S. Methods for forming thin-film heterojunction solar cells from I-III-VI.sub. 2. United States: N. p., 1985. Web.
Mickelsen, Reid A., & Chen, Wen S. Methods for forming thin-film heterojunction solar cells from I-III-VI.sub. 2. United States.
Mickelsen, Reid A., and Chen, Wen S. Tue . "Methods for forming thin-film heterojunction solar cells from I-III-VI.sub. 2". United States. https://www.osti.gov/servlets/purl/1176687.
@article{osti_1176687,
title = {Methods for forming thin-film heterojunction solar cells from I-III-VI.sub. 2},
author = {Mickelsen, Reid A. and Chen, Wen S.},
abstractNote = {An improved thin-film, large area solar cell, and methods for forming the same, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI.sub.2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order ot about 2.5 microns to about 5.0 microns (.congruent.2.5 .mu.m to .congruent.5.0 .mu.m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the The Government has rights in this invention pursuant to Contract No. EG-77-C-01-4042, Subcontract No. XJ-9-8021-1 awarded by the U.S. Department of Energy.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1985},
month = {8}
}

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