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Title: Methods for forming thin-film heterojunction solar cells from I-III-VI2

Abstract

An improved thin-film, large area solar cell, and methods for forming the same, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order of about 2.5 microns to about 5.0 microns (≅2.5 $$\mu$$m to .congruent.5.0 .mu.m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the

Inventors:
;
Issue Date:
Research Org.:
The Boeing Company, Seattle, WA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1176687
Patent Number(s):
RE31968
Application Number:
06/620,637
Assignee:
The Boeing Company (Seattle, WA)
DOE Contract Number:  
EG-77-C-01-4042; XJ-9-8021-1
Resource Type:
Patent
Resource Relation:
Patent File Date: 1984 Jun 14
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE

Citation Formats

Mickelsen, Reid A., and Chen, Wen S.. Methods for forming thin-film heterojunction solar cells from I-III-VI2. United States: N. p., 1985. Web.
Mickelsen, Reid A., & Chen, Wen S.. Methods for forming thin-film heterojunction solar cells from I-III-VI2. United States.
Mickelsen, Reid A., and Chen, Wen S.. Tue . "Methods for forming thin-film heterojunction solar cells from I-III-VI2". United States. https://www.osti.gov/servlets/purl/1176687.
@article{osti_1176687,
title = {Methods for forming thin-film heterojunction solar cells from I-III-VI2},
author = {Mickelsen, Reid A. and Chen, Wen S.},
abstractNote = {An improved thin-film, large area solar cell, and methods for forming the same, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order of about 2.5 microns to about 5.0 microns (≅2.5 $\mu$m to .congruent.5.0 .mu.m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1985},
month = {8}
}

Works referenced in this record:

CuInS 2 thin‐film homojunction solar cells
journal, July 1977


Photovoltaic properties and junction formation in CuInSe 2
journal, June 1977


Multicomponent tetrahedral compounds for solar cells
journal, July 1977


Growth of CuInSe2 films using molecular beam epitaxy
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Photovoltaic properties ofpnjunctions in CuInS2
journal, July 1979


Photovoltaic Effect in CuInSe2/CdS Heterojunctions
journal, May 1977


High photocurrent polycrystalline thin‐film CdS/CuInSe2solar cella
journal, March 1980


Growth of CuInSe2on CdS using molecular beam epitaxy
journal, January 1979


Motion of pn junctions in CuInSe 2
journal, April 1976


CuInSe 2 /CdS heterojunction photovoltaic detectors
journal, October 1974


Growth and characterization of thin‐film compound semiconductor photovoltaic heterojunctions
journal, January 1977


Auger electron spectroscopy studies of I–III–VI2 chalcopyrite compounds
journal, March 1978


Structural and electrical properties of CuInSe2 epitaxial layers prepared by single-source evaporation
journal, December 1980


Preparation of amorphous CuInSe2 thin films
journal, June 1980


Thin‐film CuInSe 2 /CdS heterojunction solar cells
journal, August 1976


Some observations on the effect of evaporation source temperature on the composition of CuInSe2 thin films
journal, January 1980


Auger analysis of CdS—CuInSe2thin-film solar cells
journal, April 1977


Copper Indium Diselenide for CdS: CuInSe2 Solar Cells
book, January 1981


p −InP/ n −CdS solar cells and photovoltaic detectors
journal, March 1975


Efficient CuInSe 2 /CdS solar cells
journal, July 1975