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Title: High average power pockels cell

Abstract

A high average power pockels cell is disclosed which reduces the effect of thermally induced strains in high average power laser technology. The pockels cell includes an elongated, substantially rectangular crystalline structure formed from a KDP-type material to eliminate shear strains. The X- and Y-axes are oriented substantially perpendicular to the edges of the crystal cross-section and to the C-axis direction of propagation to eliminate shear strains.

Inventors:
Issue Date:
Research Org.:
Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1176624
Patent Number(s):
H000868
Application Number:
06/827703
Assignee:
The United States of America as represented by the United States Department of Energy (Washington, DC)
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Resource Relation:
Patent File Date: 1986 Feb 10
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; 36 MATERIALS SCIENCE; statutory invention registration

Citation Formats

Daly, Thomas P. High average power pockels cell. United States: N. p., 1991. Web.
Daly, Thomas P. High average power pockels cell. United States.
Daly, Thomas P. Tue . "High average power pockels cell". United States. https://www.osti.gov/servlets/purl/1176624.
@article{osti_1176624,
title = {High average power pockels cell},
author = {Daly, Thomas P.},
abstractNote = {A high average power pockels cell is disclosed which reduces the effect of thermally induced strains in high average power laser technology. The pockels cell includes an elongated, substantially rectangular crystalline structure formed from a KDP-type material to eliminate shear strains. The X- and Y-axes are oriented substantially perpendicular to the edges of the crystal cross-section and to the C-axis direction of propagation to eliminate shear strains.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1991},
month = {1}
}

Works referenced in this record:

Lossless KD*P Pockels Cell for High-Power Q Switching
journal, May 1971


Strain Effects in Electrooptic Light Modulators
journal, April 1964