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Title: Apparatus and process for deposition of hard carbon films

Abstract

A process and an apparatus for depositing thin, amorphous carbon films having extreme hardness on a substrate is described. An enclosed chamber maintained at less than atmospheric pressure houses the substrate and plasma producing elements. A first electrode is comprised of a cavity enclosed within an RF coil which excites the plasma. A substrate located on a second electrode is excited by radio frequency power applied to the substrate. A magnetic field confines the plasma produced by the first electrode to the area away from the walls of the chamber and focuses the plasma onto the substrate thereby yielding film deposits having higher purity and having more rapid buildup than other methods of the prior art.

Inventors:
;
Issue Date:
Research Org.:
SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1176591
Patent Number(s):
H000566
Application Number:
06/804680
Assignee:
The United States of America as represented by the United States Department of Energy (Washington, DC)
DOE Contract Number:  
AC03-76SF00515
Resource Type:
Patent
Resource Relation:
Patent File Date: 1985 Dec 04
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 70 PLASMA PHYSICS AND FUSION TECHNOLOGY; statutory invention registration

Citation Formats

Nyaiesh, Ali R., and Garwin, Edward L. Apparatus and process for deposition of hard carbon films. United States: N. p., 1989. Web.
Nyaiesh, Ali R., & Garwin, Edward L. Apparatus and process for deposition of hard carbon films. United States.
Nyaiesh, Ali R., and Garwin, Edward L. Tue . "Apparatus and process for deposition of hard carbon films". United States. https://www.osti.gov/servlets/purl/1176591.
@article{osti_1176591,
title = {Apparatus and process for deposition of hard carbon films},
author = {Nyaiesh, Ali R. and Garwin, Edward L.},
abstractNote = {A process and an apparatus for depositing thin, amorphous carbon films having extreme hardness on a substrate is described. An enclosed chamber maintained at less than atmospheric pressure houses the substrate and plasma producing elements. A first electrode is comprised of a cavity enclosed within an RF coil which excites the plasma. A substrate located on a second electrode is excited by radio frequency power applied to the substrate. A magnetic field confines the plasma produced by the first electrode to the area away from the walls of the chamber and focuses the plasma onto the substrate thereby yielding film deposits having higher purity and having more rapid buildup than other methods of the prior art.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1989},
month = {1}
}