Epitaxial strengthening of crystals
Abstract
An epitaxial layer is used to place the surface of a crystal in compression o as to greatly increase the durability of the crystal such as a laser medium crystal.
- Inventors:
- Issue Date:
- Research Org.:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1176589
- Patent Number(s):
- H000557
- Application Number:
- 06/927993
- Assignee:
- The United States of America as represented by the United States Department of Energy (Washington, DC)
- DOE Contract Number:
- W-7405-ENG-48
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 1986 Nov 07
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 38 RADIATION CHEMISTRY, RADIOCHEMISTRY, AND NUCLEAR CHEMISTRY; statutory invention registration
Citation Formats
Morris, Robert C., Marion II, Ohn E., and Gaultieri, Devlin M. Epitaxial strengthening of crystals. United States: N. p., 1988.
Web.
Morris, Robert C., Marion II, Ohn E., & Gaultieri, Devlin M. Epitaxial strengthening of crystals. United States.
Morris, Robert C., Marion II, Ohn E., and Gaultieri, Devlin M. Tue .
"Epitaxial strengthening of crystals". United States. https://www.osti.gov/servlets/purl/1176589.
@article{osti_1176589,
title = {Epitaxial strengthening of crystals},
author = {Morris, Robert C. and Marion II, Ohn E. and Gaultieri, Devlin M.},
abstractNote = {An epitaxial layer is used to place the surface of a crystal in compression o as to greatly increase the durability of the crystal such as a laser medium crystal.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1988},
month = {12}
}
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