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Title: Epitaxial strengthening of crystals

Abstract

An epitaxial layer is used to place the surface of a crystal in compression o as to greatly increase the durability of the crystal such as a laser medium crystal.

Inventors:
; ;
Issue Date:
Research Org.:
US Department of Energy (USDOE), Washington DC (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1176589
Patent Number(s):
H000557
Assignee:
United States Of America, Department Of Energy
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 38 RADIATION CHEMISTRY, RADIOCHEMISTRY, AND NUCLEAR CHEMISTRY

Citation Formats

Morris, Robert C., Marion II, Ohn E., and Gaultieri, Devlin M.. Epitaxial strengthening of crystals. United States: N. p., 1988. Web.
Morris, Robert C., Marion II, Ohn E., & Gaultieri, Devlin M.. Epitaxial strengthening of crystals. United States.
Morris, Robert C., Marion II, Ohn E., and Gaultieri, Devlin M.. Tue . "Epitaxial strengthening of crystals". United States. https://www.osti.gov/servlets/purl/1176589.
@article{osti_1176589,
title = {Epitaxial strengthening of crystals},
author = {Morris, Robert C. and Marion II, Ohn E. and Gaultieri, Devlin M.},
abstractNote = {An epitaxial layer is used to place the surface of a crystal in compression o as to greatly increase the durability of the crystal such as a laser medium crystal.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1988},
month = {12}
}

Patent:

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