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Title: Formation of thin-film resistors on silicon substrates

Abstract

The formation of thin-film resistors by the ion implantation of a metallic conductive layer in the surface of a layer of phosphosilicate glass or borophosphosilicate glass which is deposited on a silicon substrate. The metallic conductive layer materials comprise one of the group consisting of tantalum, ruthenium, rhodium, platinum and chromium silicide. The resistor is formed and annealed prior to deposition of metal, e.g. aluminum, on the substrate.

Inventors:
;
Issue Date:
Research Org.:
The United States of America as represented by the Secretary of the Air Force, Washington, DC (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1176587
Patent Number(s):
H000546
Application Number:
02/716,089
Assignee:
The United States of America as represented by the Secretary of the Air Force (Washington, DC) OSTI
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Schnable, George L., and Wu, Chung P. Formation of thin-film resistors on silicon substrates. United States: N. p., 1988. Web.
Schnable, George L., & Wu, Chung P. Formation of thin-film resistors on silicon substrates. United States.
Schnable, George L., and Wu, Chung P. Tue . "Formation of thin-film resistors on silicon substrates". United States. https://www.osti.gov/servlets/purl/1176587.
@article{osti_1176587,
title = {Formation of thin-film resistors on silicon substrates},
author = {Schnable, George L. and Wu, Chung P.},
abstractNote = {The formation of thin-film resistors by the ion implantation of a metallic conductive layer in the surface of a layer of phosphosilicate glass or borophosphosilicate glass which is deposited on a silicon substrate. The metallic conductive layer materials comprise one of the group consisting of tantalum, ruthenium, rhodium, platinum and chromium silicide. The resistor is formed and annealed prior to deposition of metal, e.g. aluminum, on the substrate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1988},
month = {11}
}

Patent:

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