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Title: Piezo-phototronic sensor

Abstract

A device includes a substrate having a first surface. A piezoelectric nanowire is disposed on the first surface of the substrate. The piezoelectric nanowire has a first end and an opposite second end. The piezoelectric nanowire is subjected to an amount of strain. A first Schottky contact is in electrical communication with the first end of the piezoelectric nanowire. A second Schottky contact is in electrical communication with the second end of the piezoelectric nanowire. A bias voltage source is configured to impart a bias voltage between the first Schottky contact and the second Schottky contact. A mechanism is configured to measure current flowing through the piezoelectric nanowire. The amount of strain is selected so that a predetermined current will flow through the piezoelectric nanowire when light of a selected intensity is applied to a first location on the piezoelectric nanowire.

Inventors:
; ;
Issue Date:
Research Org.:
Georgia Tech Research Corporation, Atlanta, GA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1176523
Patent Number(s):
8,558,329
Application Number:
12/945,077
Assignee:
Georgia Tech Research Corporation (Atlanta, GA)
DOE Contract Number:  
FG02-07ER46394
Resource Type:
Patent
Resource Relation:
Patent File Date: 2010 Nov 12
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Wang, Zhong L., Hu, Youfan, and Zhang, Yan. Piezo-phototronic sensor. United States: N. p., 2013. Web.
Wang, Zhong L., Hu, Youfan, & Zhang, Yan. Piezo-phototronic sensor. United States.
Wang, Zhong L., Hu, Youfan, and Zhang, Yan. Tue . "Piezo-phototronic sensor". United States. https://www.osti.gov/servlets/purl/1176523.
@article{osti_1176523,
title = {Piezo-phototronic sensor},
author = {Wang, Zhong L. and Hu, Youfan and Zhang, Yan},
abstractNote = {A device includes a substrate having a first surface. A piezoelectric nanowire is disposed on the first surface of the substrate. The piezoelectric nanowire has a first end and an opposite second end. The piezoelectric nanowire is subjected to an amount of strain. A first Schottky contact is in electrical communication with the first end of the piezoelectric nanowire. A second Schottky contact is in electrical communication with the second end of the piezoelectric nanowire. A bias voltage source is configured to impart a bias voltage between the first Schottky contact and the second Schottky contact. A mechanism is configured to measure current flowing through the piezoelectric nanowire. The amount of strain is selected so that a predetermined current will flow through the piezoelectric nanowire when light of a selected intensity is applied to a first location on the piezoelectric nanowire.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2013},
month = {10}
}

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