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Title: Method for cleaning a solar cell surface opening made with a solar etch paste

Abstract

A thin silicon solar cell having a back dielectric passivation and rear contact with local back surface field is described. Specifically, the solar cell may be fabricated from a crystalline silicon wafer having a thickness from 50 to 500 micrometers. A barrier layer and a dielectric layer are applied at least to the back surface of the silicon wafer to protect the silicon wafer from deformation when the rear contact is formed. At least one opening is made to the dielectric layer. An aluminum contact that provides a back surface field is formed in the opening and on the dielectric layer. The aluminum contact may be applied by screen printing an aluminum paste having from one to 12 atomic percent silicon and then applying a heat treatment at 750 degrees Celsius.

Inventors:
;
Issue Date:
Research Org.:
Georgia Tech Research Corporation, Atlanta, GA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1176386
Patent Number(s):
7,741,225
Application Number:
12/116,132
Assignee:
Georgia Tech Research Corporation (Atlanta, GA) OSTI
DOE Contract Number:  
FC36-07GO17023
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 14 SOLAR ENERGY

Citation Formats

Rohatgi, Ajeet, and Meemongkolkiat, Vichai. Method for cleaning a solar cell surface opening made with a solar etch paste. United States: N. p., 2010. Web.
Rohatgi, Ajeet, & Meemongkolkiat, Vichai. Method for cleaning a solar cell surface opening made with a solar etch paste. United States.
Rohatgi, Ajeet, and Meemongkolkiat, Vichai. Tue . "Method for cleaning a solar cell surface opening made with a solar etch paste". United States. https://www.osti.gov/servlets/purl/1176386.
@article{osti_1176386,
title = {Method for cleaning a solar cell surface opening made with a solar etch paste},
author = {Rohatgi, Ajeet and Meemongkolkiat, Vichai},
abstractNote = {A thin silicon solar cell having a back dielectric passivation and rear contact with local back surface field is described. Specifically, the solar cell may be fabricated from a crystalline silicon wafer having a thickness from 50 to 500 micrometers. A barrier layer and a dielectric layer are applied at least to the back surface of the silicon wafer to protect the silicon wafer from deformation when the rear contact is formed. At least one opening is made to the dielectric layer. An aluminum contact that provides a back surface field is formed in the opening and on the dielectric layer. The aluminum contact may be applied by screen printing an aluminum paste having from one to 12 atomic percent silicon and then applying a heat treatment at 750 degrees Celsius.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2010},
month = {6}
}

Patent:

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