Thin film solar cells by selenization sulfurization using diethyl selenium as a selenium precursor
Abstract
A method of forming a CIGSS absorber layer includes the steps of providing a metal precursor, and selenizing the metal precursor using diethyl selenium to form a selenized metal precursor layer (CIGSS absorber layer). A high efficiency solar cell includes a CIGSS absorber layer formed by a process including selenizing a metal precursor using diethyl selenium to form the CIGSS absorber layer.
- Inventors:
- Issue Date:
- Research Org.:
- Univ. of Central Florida, Orlando, FL (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1176200
- Patent Number(s):
- 7632701
- Application Number:
- 11/745,621
- Assignee:
- University Of Central Florida
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- XXL-5-44205-08
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 14 SOLAR ENERGY
Citation Formats
Dhere, Neelkanth G., and Kadam, Ankur A. Thin film solar cells by selenization sulfurization using diethyl selenium as a selenium precursor. United States: N. p., 2009.
Web.
Dhere, Neelkanth G., & Kadam, Ankur A. Thin film solar cells by selenization sulfurization using diethyl selenium as a selenium precursor. United States.
Dhere, Neelkanth G., and Kadam, Ankur A. Tue .
"Thin film solar cells by selenization sulfurization using diethyl selenium as a selenium precursor". United States. https://www.osti.gov/servlets/purl/1176200.
@article{osti_1176200,
title = {Thin film solar cells by selenization sulfurization using diethyl selenium as a selenium precursor},
author = {Dhere, Neelkanth G. and Kadam, Ankur A.},
abstractNote = {A method of forming a CIGSS absorber layer includes the steps of providing a metal precursor, and selenizing the metal precursor using diethyl selenium to form a selenized metal precursor layer (CIGSS absorber layer). A high efficiency solar cell includes a CIGSS absorber layer formed by a process including selenizing a metal precursor using diethyl selenium to form the CIGSS absorber layer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2009},
month = {12}
}
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Works referenced in this record:
Selenium- and tellurium-centred radicals
journal, December 1993
- Deryagina, Eleonora N.; Voronkov, Mikhail G.; Korchevin, N. A.
- Russian Chemical Reviews, Vol. 62, Issue 12