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Title: ZnO/Cu(InGa)Se.sub.2 solar cells prepared by vapor phase Zn doping

Abstract

A process for making a thin film ZnO/Cu(InGa)Se.sub.2 solar cell without depositing a buffer layer and by Zn doping from a vapor phase, comprising: depositing Cu(InGa)Se.sub.2 layer on a metal back contact deposited on a glass substrate; heating the Cu(InGa)Se.sub.2 layer on the metal back contact on the glass substrate to a temperature range between about 100.degree. C. to about 250.degree. C.; subjecting the heated layer of Cu(InGa)Se.sub.2 to an evaporant species from a Zn compound; and sputter depositing ZnO on the Zn compound evaporant species treated layer of Cu(InGa)Se.sub.2.

Inventors:
; ; ; ;
Issue Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1176116
Patent Number(s):
7179677
Application Number:
10/534,217
Assignee:
Midwest Research Institute (Kansas City, MO)
Patent Classifications (CPCs):
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
AC36-99GO10093
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY

Citation Formats

Ramanathan, Kannan, Hasoon, Falah S., Asher, Sarah E., Dolan, James, and Keane, James C. ZnO/Cu(InGa)Se.sub.2 solar cells prepared by vapor phase Zn doping. United States: N. p., 2007. Web.
Ramanathan, Kannan, Hasoon, Falah S., Asher, Sarah E., Dolan, James, & Keane, James C. ZnO/Cu(InGa)Se.sub.2 solar cells prepared by vapor phase Zn doping. United States.
Ramanathan, Kannan, Hasoon, Falah S., Asher, Sarah E., Dolan, James, and Keane, James C. Tue . "ZnO/Cu(InGa)Se.sub.2 solar cells prepared by vapor phase Zn doping". United States. https://www.osti.gov/servlets/purl/1176116.
@article{osti_1176116,
title = {ZnO/Cu(InGa)Se.sub.2 solar cells prepared by vapor phase Zn doping},
author = {Ramanathan, Kannan and Hasoon, Falah S. and Asher, Sarah E. and Dolan, James and Keane, James C.},
abstractNote = {A process for making a thin film ZnO/Cu(InGa)Se.sub.2 solar cell without depositing a buffer layer and by Zn doping from a vapor phase, comprising: depositing Cu(InGa)Se.sub.2 layer on a metal back contact deposited on a glass substrate; heating the Cu(InGa)Se.sub.2 layer on the metal back contact on the glass substrate to a temperature range between about 100.degree. C. to about 250.degree. C.; subjecting the heated layer of Cu(InGa)Se.sub.2 to an evaporant species from a Zn compound; and sputter depositing ZnO on the Zn compound evaporant species treated layer of Cu(InGa)Se.sub.2.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2007},
month = {2}
}

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Works referenced in this record:

Preparation of Zn doped Cu(In,Ga)Se2 thin films by physical vapor deposition for solar cells
journal, June 2003


Charging and discharging of defect states in CIGS/ZnO junctions
journal, February 2000


Surface treatment of CuInGaSe2 thin films and its effect on the photovoltaic properties of solar cells
journal, September 2003


A ZnO/p-CuInSe2 thin film solar cell prepared entirely by spray pyrolysis
journal, April 1982


Buried pn homojunction in Cu(InGa)Se/sub 2/ solar cells formed by intentional Zn doping
conference, January 2000

  • Yamada, A.; Sugiyama, T.; Chaisitsak, S.
  • 28th IEEE Photovoltaic Specialists Conference, Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)
  • https://doi.org/10.1109/PVSC.2000.915871