ZnO/Cu(InGa)Se2 solar cells prepared by vapor phase Zn doping
Abstract
A process for making a thin film ZnO/Cu(InGa)Se2 solar cell without depositing a buffer layer and by Zn doping from a vapor phase, comprising: depositing Cu(InGa)Se2 layer on a metal back contact deposited on a glass substrate; heating the Cu(InGa)Se2 layer on the metal back contact on the glass substrate to a temperature range between about 100° C. to about 250° C.; subjecting the heated layer of Cu(InGa)Se2 to an evaporant species from a Zn compound; and sputter depositing ZnO on the Zn compound evaporant species treated layer of Cu(InGa)Se2.
- Inventors:
- Issue Date:
- Research Org.:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1176116
- Patent Number(s):
- 7179677
- Application Number:
- 10/534,217
- Assignee:
- Midwest Research Institute (Kansas City, MO)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- AC36-99GO10093
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2003 Sep 03
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY
Citation Formats
Ramanathan, Kannan, Hasoon, Falah S., Asher, Sarah E., Dolan, James, and Keane, James C. ZnO/Cu(InGa)Se2 solar cells prepared by vapor phase Zn doping. United States: N. p., 2007.
Web.
Ramanathan, Kannan, Hasoon, Falah S., Asher, Sarah E., Dolan, James, & Keane, James C. ZnO/Cu(InGa)Se2 solar cells prepared by vapor phase Zn doping. United States.
Ramanathan, Kannan, Hasoon, Falah S., Asher, Sarah E., Dolan, James, and Keane, James C. Tue .
"ZnO/Cu(InGa)Se2 solar cells prepared by vapor phase Zn doping". United States. https://www.osti.gov/servlets/purl/1176116.
@article{osti_1176116,
title = {ZnO/Cu(InGa)Se2 solar cells prepared by vapor phase Zn doping},
author = {Ramanathan, Kannan and Hasoon, Falah S. and Asher, Sarah E. and Dolan, James and Keane, James C.},
abstractNote = {A process for making a thin film ZnO/Cu(InGa)Se2 solar cell without depositing a buffer layer and by Zn doping from a vapor phase, comprising: depositing Cu(InGa)Se2 layer on a metal back contact deposited on a glass substrate; heating the Cu(InGa)Se2 layer on the metal back contact on the glass substrate to a temperature range between about 100° C. to about 250° C.; subjecting the heated layer of Cu(InGa)Se2 to an evaporant species from a Zn compound; and sputter depositing ZnO on the Zn compound evaporant species treated layer of Cu(InGa)Se2.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2007},
month = {2}
}
Works referenced in this record:
Preparation of Zn doped Cu(In,Ga)Se2 thin films by physical vapor deposition for solar cells
journal, June 2003
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Charging and discharging of defect states in CIGS/ZnO junctions
journal, February 2000
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Ga2O3 segregation in Cu(In, Ga)Se2/ZnO superstrate solar cells and its impact on their photovoltaic properties
journal, February 2002
- Terheggen, M.; Heinrich, H.; Kostorz, G.
- Thin Solid Films, Vol. 403-404
Surface treatment of CuInGaSe2 thin films and its effect on the photovoltaic properties of solar cells
journal, September 2003
- Ramanathan, K.; Hasoon, F. S.; Smith, S.
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A ZnO/p-CuInSe2 thin film solar cell prepared entirely by spray pyrolysis
journal, April 1982
- Tomar, M. S.; Garcia, F. J.
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Buried pn homojunction in Cu(InGa)Se/sub 2/ solar cells formed by intentional Zn doping
conference, January 2000
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