Selective etching of silicon carbide films
Abstract
A method of etching silicon carbide using a nonmetallic mask layer. The method includes providing a silicon carbide substrate; forming a non-metallic mask layer by applying a layer of material on the substrate; patterning the mask layer to expose underlying areas of the substrate; and etching the underlying areas of the substrate with a plasma at a first rate, while etching the mask layer at a rate lower than the first rate.
- Inventors:
- Issue Date:
- Research Org.:
- Sandia National Lab. (SNL-CA), Livermore, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1176038
- Patent Number(s):
- 7151277
- Application Number:
- 10/613,508
- Assignee:
- The Regents of the University of California (Oakland, CA)
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B81 - MICROSTRUCTURAL TECHNOLOGY B81C - PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- 9782
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2003 Jul 03
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Gao, Di, Howe, Roger T., and Maboudian, Roya. Selective etching of silicon carbide films. United States: N. p., 2006.
Web.
Gao, Di, Howe, Roger T., & Maboudian, Roya. Selective etching of silicon carbide films. United States.
Gao, Di, Howe, Roger T., and Maboudian, Roya. Tue .
"Selective etching of silicon carbide films". United States. https://www.osti.gov/servlets/purl/1176038.
@article{osti_1176038,
title = {Selective etching of silicon carbide films},
author = {Gao, Di and Howe, Roger T. and Maboudian, Roya},
abstractNote = {A method of etching silicon carbide using a nonmetallic mask layer. The method includes providing a silicon carbide substrate; forming a non-metallic mask layer by applying a layer of material on the substrate; patterning the mask layer to expose underlying areas of the substrate; and etching the underlying areas of the substrate with a plasma at a first rate, while etching the mask layer at a rate lower than the first rate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2006},
month = {12}
}
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.
Works referenced in this record:
Micromechanical properties of silicon-carbide thin films deposited using single-source chemical-vapor deposition
journal, July 2001
- Stoldt, C. R.; Fritz, M. C.; Carraro, C.
- Applied Physics Letters, Vol. 79, Issue 3, p. 347-349
Response surface methodology applied to silicon trench etching in Cl2/HBr/O2 using transformer coupled plasma technique
journal, June 2002
- Hung, C. C.; Lin, H. C.; Shih, H. C.
- Solid-State Electronics, Vol. 46, Issue 6
Simulations and experiments of etching of silicon in HBr plasmas for high aspect ratio features
journal, January 2002
- Hwang, Helen H.; Meyyappan, M.; Mathad, G. S.
- Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 20, Issue 6
Operation of α(6H)-SiC pressure sensor at 500 °C
journal, April 1998
- Okojie, Robert S.; Ned, Alexander A.; Kurtz, Anthony D.
- Sensors and Actuators A: Physical, Vol. 66, Issue 1-3
Evaluation of MEMS materials of construction for implantable medical devices
journal, July 2002
- Kotzar, Geoffrey; Freas, Mark; Abel, Phillip
- Biomaterials, Vol. 23, Issue 13
Simultaneous etching of polysilicon materials with different doping types by low-damage transformer-coupled plasma technique
journal, September 2002
- Hung, Chi-Chao; Lin, Horng-Chih; Wang, Meng-Fan
- Microelectronic Engineering, Vol. 63, Issue 4
Transformer coupled plasma dielectric etch for 0.25 μm technologies
journal, January 2000
- Delsol, R.; Setton, M.; Vinet, F.
- Microelectronic Engineering, Vol. 50, Issue 1-4
Silicon carbide micro-reaction-sintering using micromachined silicon molds
journal, March 2001
- Tanaka, S.; Sugimoto, S.; Li, J. -F.
- Journal of Microelectromechanical Systems, Vol. 10, Issue 1
High-Pressure Bipropellant Microrocket Engine
journal, July 2001
- London, A. P.; Epstein, A. H.; Kerrebrock, J. L.
- Journal of Propulsion and Power, Vol. 17, Issue 4
High rate etching of SiC using inductively coupled plasma reactive ion etching in SF6-based gas mixtures
journal, October 1999
- Khan, F. A.; Adesida, I.
- Applied Physics Letters, Vol. 75, Issue 15
Ultradeep, low-damage dry etching of SiC
journal, February 2000
- Cho, H.; Leerungnawarat, P.; Hays, D. C.
- Applied Physics Letters, Vol. 76, Issue 6
Chemical contribution of oxygen to silicon carbide plasma etching kinetics in a distributed electron cyclotron resonance (DECR) reactor
journal, March 1999
- Lanois, Frédéric; Planson, Dominique; Locatelli, Marie-Laure
- Journal of Electronic Materials, Vol. 28, Issue 3
Silicon carbide as a new MEMS technology
journal, May 2000
- Sarro, Pasqualina M.
- Sensors and Actuators A: Physical, Vol. 82, Issue 1-3
A low-temperature CVD process for silicon carbide MEMS
journal, April 2002
- Stoldt, Conrad R.; Carraro, Carlo; Ashurst, W. Robert
- Sensors and Actuators A: Physical, Vol. 97-98
A Review of SiC Reactive Ion Etching in Fluorinated Plasmas
journal, July 1997
- Yih, P. H.; Saxena, V.; Steckl, A. J.
- physica status solidi (b), Vol. 202, Issue 1, p. 605-642
Etching of 3C-SiC using CHF[sub 3]/O[sub 2] and CHF[sub 3]/O[sub 2]/He plasmas at 1.75 Torr
journal, March 1998
- Fleischman, Aaron J.
- Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 16, Issue 2
Silicon carbide for microelectromechanical systems
journal, March 2000
- Mehregany, M.; Zorman, C. A.; Roy, S.
- International Materials Reviews, Vol. 45, Issue 3
Angle etch control for silicon carbide power devices
journal, July 1996
- Lanois, F.; Lassagne, P.; Planson, D.
- Applied Physics Letters, Vol. 69, Issue 2
Deep reactive ion etching of silicon carbide
journal, January 2001
- Tanaka, S.; Rajanna, K.; Abe, T.
- Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 19, Issue 6
High-selectivity etching of polycrystalline 3C-SiC films using HBr-based transformer coupled plasma
journal, March 2003
- Gao, Di; Howe, Roger T.; Maboudian, Roya
- Applied Physics Letters, Vol. 82, Issue 11