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Title: Selective etching of silicon carbide films

Abstract

A method of etching silicon carbide using a nonmetallic mask layer. The method includes providing a silicon carbide substrate; forming a non-metallic mask layer by applying a layer of material on the substrate; patterning the mask layer to expose underlying areas of the substrate; and etching the underlying areas of the substrate with a plasma at a first rate, while etching the mask layer at a rate lower than the first rate.

Inventors:
; ;
Issue Date:
Research Org.:
Univ. of California, Oakland, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1176038
Patent Number(s):
7151277
Application Number:
10/613,508
Assignee:
The Regents of the University of California (Oakland, CA)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
B - PERFORMING OPERATIONS B81 - MICROSTRUCTURAL TECHNOLOGY B81C - PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
DOE Contract Number:  
9782
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Gao, Di, Howe, Roger T., and Maboudian, Roya. Selective etching of silicon carbide films. United States: N. p., 2006. Web.
Gao, Di, Howe, Roger T., & Maboudian, Roya. Selective etching of silicon carbide films. United States.
Gao, Di, Howe, Roger T., and Maboudian, Roya. Tue . "Selective etching of silicon carbide films". United States. https://www.osti.gov/servlets/purl/1176038.
@article{osti_1176038,
title = {Selective etching of silicon carbide films},
author = {Gao, Di and Howe, Roger T. and Maboudian, Roya},
abstractNote = {A method of etching silicon carbide using a nonmetallic mask layer. The method includes providing a silicon carbide substrate; forming a non-metallic mask layer by applying a layer of material on the substrate; patterning the mask layer to expose underlying areas of the substrate; and etching the underlying areas of the substrate with a plasma at a first rate, while etching the mask layer at a rate lower than the first rate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2006},
month = {12}
}

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Works referenced in this record:

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