Selective etching of silicon carbide films

Gao, Di; Howe, Roger T.; Maboudian, Roya

Title: Selective etching of silicon carbide films

Abstract

A method of etching silicon carbide using a nonmetallic mask layer. The method includes providing a silicon carbide substrate; forming a non-metallic mask layer by applying a layer of material on the substrate; patterning the mask layer to expose underlying areas of the substrate; and etching the underlying areas of the substrate with a plasma at a first rate, while etching the mask layer at a rate lower than the first rate.

Inventors:: Gao, Di; Howe, Roger T.; Maboudian, Roya

Issue Date:: 2006-12-19

Research Org.:: Sandia National Lab. (SNL-CA), Livermore, CA (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1176038

Patent Number(s):: 7151277

Application Number:: 10/613,508

Assignee:: The Regents of the University of California (Oakland, CA)

Patent Classifications (CPCs):: B - PERFORMING OPERATIONS B81 - MICROSTRUCTURAL TECHNOLOGY B81C - PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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B - PERFORMING OPERATIONS B81 - MICROSTRUCTURAL TECHNOLOGY B81C - PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
B81C1/00595 - {Control etch selectivity}
B81C2201/0109 - Sacrificial layers not provided for in B81C2201/0107 - B81C2201/0108
B81C2201/0132 - Dry etching, i.e. plasma etching, barrel etching, reactive ion etching [RIE], sputter etching or ion milling

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L21/0475 - {Changing the shape of the semiconductor body, e.g. forming recesses,

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DOE Contract Number:: 9782

Resource Type:: Patent

Resource Relation:: Patent File Date: 2003 Jul 03

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Gao, Di, Howe, Roger T., and Maboudian, Roya. Selective etching of silicon carbide films.  United States: N. p., 2006. 
        Web.

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                    Gao, Di, Howe, Roger T., & Maboudian, Roya. Selective etching of silicon carbide films.  United States.

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                    Gao, Di, Howe, Roger T., and Maboudian, Roya. Tue .  
        "Selective etching of silicon carbide films".  United States.  https://www.osti.gov/servlets/purl/1176038.

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@article{osti_1176038,

  title        = {Selective etching of silicon carbide films},

  author       = {Gao, Di and Howe, Roger T. and Maboudian, Roya},

  abstractNote = {A method of etching silicon carbide using a nonmetallic mask layer. The method includes providing a silicon carbide substrate; forming a non-metallic mask layer by applying a layer of material on the substrate; patterning the mask layer to expose underlying areas of the substrate; and etching the underlying areas of the substrate with a plasma at a first rate, while etching the mask layer at a rate lower than the first rate.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2006},

  month        = {12}

}

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Works referenced in this record:

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Gao, Di; Howe, Roger T.; Maboudian, Roya
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Similar Records

Title: Selective etching of silicon carbide films

Abstract

Citation Formats

Micromechanical properties of silicon-carbide thin films deposited using single-source chemical-vapor deposition journal, July 2001

Response surface methodology applied to silicon trench etching in Cl2/HBr/O2 using transformer coupled plasma technique journal, June 2002

Simulations and experiments of etching of silicon in HBr plasmas for high aspect ratio features journal, January 2002

Operation of α(6H)-SiC pressure sensor at 500 °C journal, April 1998

Evaluation of MEMS materials of construction for implantable medical devices journal, July 2002

Simultaneous etching of polysilicon materials with different doping types by low-damage transformer-coupled plasma technique journal, September 2002

Transformer coupled plasma dielectric etch for 0.25 μm technologies journal, January 2000

Silicon carbide micro-reaction-sintering using micromachined silicon molds journal, March 2001

High-Pressure Bipropellant Microrocket Engine journal, July 2001

High rate etching of SiC using inductively coupled plasma reactive ion etching in SF6-based gas mixtures journal, October 1999

Ultradeep, low-damage dry etching of SiC journal, February 2000

Chemical contribution of oxygen to silicon carbide plasma etching kinetics in a distributed electron cyclotron resonance (DECR) reactor journal, March 1999

Silicon carbide as a new MEMS technology journal, May 2000

A low-temperature CVD process for silicon carbide MEMS journal, April 2002

Etching of 3C-SiC using CHF[sub 3]/O[sub 2] and CHF[sub 3]/O[sub 2]/He plasmas at 1.75 Torr journal, March 1998

Silicon carbide for microelectromechanical systems journal, March 2000

Angle etch control for silicon carbide power devices journal, July 1996

Deep reactive ion etching of silicon carbide journal, January 2001

High-selectivity etching of polycrystalline 3C-SiC films using HBr-based transformer coupled plasma journal, March 2003

Micromechanical properties of silicon-carbide thin films deposited using single-source chemical-vapor deposition
journal, July 2001

Response surface methodology applied to silicon trench etching in Cl2/HBr/O2 using transformer coupled plasma technique
journal, June 2002

Simulations and experiments of etching of silicon in HBr plasmas for high aspect ratio features
journal, January 2002

Operation of α(6H)-SiC pressure sensor at 500 °C
journal, April 1998

Evaluation of MEMS materials of construction for implantable medical devices
journal, July 2002

Simultaneous etching of polysilicon materials with different doping types by low-damage transformer-coupled plasma technique
journal, September 2002

Transformer coupled plasma dielectric etch for 0.25 μm technologies
journal, January 2000

Silicon carbide micro-reaction-sintering using micromachined silicon molds
journal, March 2001

High-Pressure Bipropellant Microrocket Engine
journal, July 2001

High rate etching of SiC using inductively coupled plasma reactive ion etching in SF6-based gas mixtures
journal, October 1999

Ultradeep, low-damage dry etching of SiC
journal, February 2000

Chemical contribution of oxygen to silicon carbide plasma etching kinetics in a distributed electron cyclotron resonance (DECR) reactor
journal, March 1999

Silicon carbide as a new MEMS technology
journal, May 2000

A low-temperature CVD process for silicon carbide MEMS
journal, April 2002

Etching of 3C-SiC using CHF[sub 3]/O[sub 2] and CHF[sub 3]/O[sub 2]/He plasmas at 1.75 Torr
journal, March 1998

Silicon carbide for microelectromechanical systems
journal, March 2000

Angle etch control for silicon carbide power devices
journal, July 1996

Deep reactive ion etching of silicon carbide
journal, January 2001

High-selectivity etching of polycrystalline 3C-SiC films using HBr-based transformer coupled plasma
journal, March 2003