Title: Nanocrystal structures

Abstract

A structure including a grating and a semiconductor nanocrystal layer on the grating, can be a laser. The semiconductor nanocrystal layer can include a plurality of semiconductor nanocrystals including a Group II–VI compound, the nanocrystals being distributed in a metal oxide matrix. The grating can have a periodicity from 200 nm to 500 nm.

Inventors:

Eisler, Hans J.; Sundar, Vikram C.; Walsh, Michael E.; Klimov, Victor I.; Bawendi, Moungi G.; Smith, Henry I.

Issue Date:

2006-12-19

Research Org.:

Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1176035

Patent Number(s):

7150910

Application Number:

10/294,742

Assignee:

Massachusetts Institute of Technology (Cambridge, MA)

Patent Classifications (CPCs):

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

G - PHYSICS G02 - OPTICS G02B - OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS

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C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

C30B29/605 - {Products containing multiple oriented crystallites, e.g. columnar crystallites}
C30B5/00 - Single-crystal growth from gels

G - PHYSICS G02 - OPTICS G02B - OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS

G02B6/122 - Basic optical elements, e.g. light-guiding paths

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02381 - {Silicon, silicon germanium, germanium}
H01L21/0242 - {Crystalline insulating materials}
H01L21/0243 - {Surface structure}
H01L21/02521 - {Materials}
H01L21/02601 - {Nanoparticles
H01L29/06 - characterised by their shape
H01L29/20 - including, apart from doping materials or other impurities, only AIIIBV compounds
H01L29/22 - including, apart from doping materials or other impurities, only AIIBVI compounds
H01L29/26 - including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24 {, e.g. alloys}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

Y10S977/813 - Of specified inorganic semiconductor composition, e.g. periodic table group IV-VI compositions

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

Y10T428/12528 - Semiconductor component
Y10T428/24917 - including metal layer
Y10T428/252 - Glass or ceramic [i.e., fired or glazed clay, cement, etc.] [porcelain, quartz, etc.]
Y10T428/31678 - Of metal

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Resource Type:

Patent

Country of Publication:

United States

Language:

English

Subject:

77 NANOSCIENCE AND NANOTECHNOLOGY