Method of making diode structures
Abstract
A method of making a diode structure includes the step of depositing a transparent electrode layer of any one or more of the group ZnO, ZnS and CdO onto a substrate layer, and depositing an active semiconductor junction having an n-type layer and a p-type layer onto the transparent electrode layer under process conditions that avoid substantial degradation of the electrode layer. A back electrode coating layer is applied to form a diode structure.
- Inventors:
- Issue Date:
- Research Org.:
- University Of Toledo, Toledo, OH (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1176011
- Patent Number(s):
- 7141863
- Application Number:
- 10/722,643
- Assignee:
- University Of Toledo
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- AAT-1-30620-09, NDJ-1-30630-02
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Compaan, Alvin D., and Gupta, Akhlesh. Method of making diode structures. United States: N. p., 2006.
Web.
Compaan, Alvin D., & Gupta, Akhlesh. Method of making diode structures. United States.
Compaan, Alvin D., and Gupta, Akhlesh. Tue .
"Method of making diode structures". United States. https://www.osti.gov/servlets/purl/1176011.
@article{osti_1176011,
title = {Method of making diode structures},
author = {Compaan, Alvin D. and Gupta, Akhlesh},
abstractNote = {A method of making a diode structure includes the step of depositing a transparent electrode layer of any one or more of the group ZnO, ZnS and CdO onto a substrate layer, and depositing an active semiconductor junction having an n-type layer and a p-type layer onto the transparent electrode layer under process conditions that avoid substantial degradation of the electrode layer. A back electrode coating layer is applied to form a diode structure.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Nov 28 00:00:00 EST 2006},
month = {Tue Nov 28 00:00:00 EST 2006}
}
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