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Title: Method of making diode structures

Abstract

A method of making a diode structure includes the step of depositing a transparent electrode layer of any one or more of the group ZnO, ZnS and CdO onto a substrate layer, and depositing an active semiconductor junction having an n-type layer and a p-type layer onto the transparent electrode layer under process conditions that avoid substantial degradation of the electrode layer. A back electrode coating layer is applied to form a diode structure.

Inventors:
;
Issue Date:
Research Org.:
University Of Toledo, Toledo, OH (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1176011
Patent Number(s):
7141863
Application Number:
10/722,643
Assignee:
University Of Toledo
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02P - CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
DOE Contract Number:  
AAT-1-30620-09, NDJ-1-30630-02
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Compaan, Alvin D., and Gupta, Akhlesh. Method of making diode structures. United States: N. p., 2006. Web.
Compaan, Alvin D., & Gupta, Akhlesh. Method of making diode structures. United States.
Compaan, Alvin D., and Gupta, Akhlesh. Tue . "Method of making diode structures". United States. https://www.osti.gov/servlets/purl/1176011.
@article{osti_1176011,
title = {Method of making diode structures},
author = {Compaan, Alvin D. and Gupta, Akhlesh},
abstractNote = {A method of making a diode structure includes the step of depositing a transparent electrode layer of any one or more of the group ZnO, ZnS and CdO onto a substrate layer, and depositing an active semiconductor junction having an n-type layer and a p-type layer onto the transparent electrode layer under process conditions that avoid substantial degradation of the electrode layer. A back electrode coating layer is applied to form a diode structure.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2006},
month = {11}
}

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Works referenced in this record:

Flexible CdTe solar cells on polymer films
journal, January 2001


Heavy p ‐doping of ZnTe by molecular beam epitaxy using a nitrogen plasma source
journal, February 1993