Method and apparatus for fabricating a thin-film solar cell utilizing a hot wire chemical vapor deposition technique

Wang, Qi; Iwaniczko, Eugene

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Title: Method and apparatus for fabricating a thin-film solar cell utilizing a hot wire chemical vapor deposition technique

Abstract

A thin-film solar cell is provided. The thin-film solar cell comprises an a-SiGe:H (1.6 eV) n-i-p solar cell having a deposition rate of at least ten (10) .ANG./second for the a-SiGe:H intrinsic layer by hot wire chemical vapor deposition. A method for fabricating a thin film solar cell is also provided. The method comprises depositing a n-i-p layer at a deposition rate of at least ten (10) .ANG./second for the a-SiGe:H intrinsic layer.

Inventors:: Wang, Qi; Iwaniczko, Eugene

Issue Date:: Tue Oct 17 00:00:00 EDT 2006

Research Org.:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1175951

Patent Number(s):: 7122736

Application Number:: 10/485,715

Assignee:: Midwest Research Institute (Kansas City, MO)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/056 - the light-reflecting means being of the back surface reflector [BSR] type
H01L31/075 - the potential barriers being only of the PIN type
H01L31/204 - {including AIVBIV alloys, e.g. SiGe, SiC}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/52 - PV systems with concentrators
Y02E10/548 - Amorphous silicon PV cells

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02P - CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
Y02P70/50 - Manufacturing or production processes characterised by the final manufactured product

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DOE Contract Number:: AC36-99GO10337

Resource Type:: Patent

Resource Relation:: Patent File Date: 2001 Aug 16

Country of Publication:: United States

Language:: English

Subject:: 14 SOLAR ENERGY

Citation Formats


                    Wang, Qi, and Iwaniczko, Eugene. Method and apparatus for fabricating a thin-film solar cell utilizing a hot wire chemical vapor deposition technique.  United States: N. p., 2006. 
        Web.

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                    Wang, Qi, & Iwaniczko, Eugene. Method and apparatus for fabricating a thin-film solar cell utilizing a hot wire chemical vapor deposition technique.  United States.

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                    Wang, Qi, and Iwaniczko, Eugene. Tue .  
        "Method and apparatus for fabricating a thin-film solar cell utilizing a hot wire chemical vapor deposition technique".  United States.  https://www.osti.gov/servlets/purl/1175951.

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@article{osti_1175951,

  title        = {Method and apparatus for fabricating a thin-film solar cell utilizing a hot wire chemical vapor deposition technique},

  author       = {Wang, Qi and Iwaniczko, Eugene},

  abstractNote = {A thin-film solar cell is provided. The thin-film solar cell comprises an a-SiGe:H (1.6 eV) n-i-p solar cell having a deposition rate of at least ten (10) .ANG./second for the a-SiGe:H intrinsic layer by hot wire chemical vapor deposition. A method for fabricating a thin film solar cell is also provided. The method comprises depositing a n-i-p layer at a deposition rate of at least ten (10) .ANG./second for the a-SiGe:H intrinsic layer.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {Tue Oct 17 00:00:00 EDT 2006},

  month        = {Tue Oct 17 00:00:00 EDT 2006}

}

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Works referenced in this record:

Preparation of amorphous hydrogenated silicon-germanium material and solar cells using the thermocatalytic chemical vapor deposition
journal, March 1999

Lill, M.; Schröder, B.
Applied Physics Letters, Vol. 74, Issue 9
https://doi.org/10.1063/1.123525

Low Hydrogen Content, High Quality Hydrogenated Amorphous Silicon Grown by Hot-Wire CVD
journal, January 1999

Nelson, Brent P.; Crandall, Richard S.; Iwaniczko, Eugene
MRS Proceedings, Vol. 557
https://doi.org/10.1557/PROC-557-97

Hydrogenated Amorphous Silicon Germanium Alloys Grown by the Hot-Wire Chemical Vapor Deposition Technique
journal, January 1998

Nelson, Brent P.; Xu, Yueqin; Williamson, D. L.
MRS Proceedings, Vol. 507
https://doi.org/10.1557/PROC-507-447

H Out-Diffusion and Device Performance in n-i-p Solar Cells Utilizing High Temperature Hot Wire a-Si:H i-Layers
journal, January 1998

Mahan, A. H.; Reedy, R. C.; Iwaniczko, E.
MRS Proceedings, Vol. 507
https://doi.org/10.1557/PROC-507-119

a-Si:H-based triple-junction cells prepared at i-layer deposition rates of 10 a/s using a 70 MHz PECVD technique
conference, January 2000

Jones, S. J.; Liu, T.; Deng, X.
28th IEEE Photovoltaic Specialists Conference, Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)
https://doi.org/10.1109/PVSC.2000.916015

Microwave Glow-Discharge Deposition of Amorphous Silicon Based Alloys at High Deposition Rates for Solar Cell Application
journal, January 1995

Guha, S.; Xu, X.; Yang, J.
MRS Proceedings, Vol. 377
https://doi.org/10.1557/PROC-377-621

High Quality Amorphous Silicon Germanium Alloy Solar Cells Made by Hot-wire CVD at 10 Å/s
journal, January 2001

Wang, Qi; Iwaniczko, Eugene; Yang, Jeffrey
MRS Proceedings, Vol. 664
https://doi.org/10.1557/PROC-664-A7.5

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Similar Records

Title: Method and apparatus for fabricating a thin-film solar cell utilizing a hot wire chemical vapor deposition technique

Abstract

Citation Formats

Preparation of amorphous hydrogenated silicon-germanium material and solar cells using the thermocatalytic chemical vapor deposition journal, March 1999

Low Hydrogen Content, High Quality Hydrogenated Amorphous Silicon Grown by Hot-Wire CVD journal, January 1999

Hydrogenated Amorphous Silicon Germanium Alloys Grown by the Hot-Wire Chemical Vapor Deposition Technique journal, January 1998

H Out-Diffusion and Device Performance in n-i-p Solar Cells Utilizing High Temperature Hot Wire a-Si:H i-Layers journal, January 1998

a-Si:H-based triple-junction cells prepared at i-layer deposition rates of 10 a/s using a 70 MHz PECVD technique conference, January 2000

Microwave Glow-Discharge Deposition of Amorphous Silicon Based Alloys at High Deposition Rates for Solar Cell Application journal, January 1995

High Quality Amorphous Silicon Germanium Alloy Solar Cells Made by Hot-wire CVD at 10 Å/s journal, January 2001

Preparation of amorphous hydrogenated silicon-germanium material and solar cells using the thermocatalytic chemical vapor deposition
journal, March 1999

Low Hydrogen Content, High Quality Hydrogenated Amorphous Silicon Grown by Hot-Wire CVD
journal, January 1999

Hydrogenated Amorphous Silicon Germanium Alloys Grown by the Hot-Wire Chemical Vapor Deposition Technique
journal, January 1998

H Out-Diffusion and Device Performance in n-i-p Solar Cells Utilizing High Temperature Hot Wire a-Si:H i-Layers
journal, January 1998

a-Si:H-based triple-junction cells prepared at i-layer deposition rates of 10 a/s using a 70 MHz PECVD technique
conference, January 2000

Microwave Glow-Discharge Deposition of Amorphous Silicon Based Alloys at High Deposition Rates for Solar Cell Application
journal, January 1995

High Quality Amorphous Silicon Germanium Alloy Solar Cells Made by Hot-wire CVD at 10 Å/s
journal, January 2001