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Title: Method and apparatus for fabricating a thin-film solar cell utilizing a hot wire chemical vapor deposition technique

Abstract

A thin-film solar cell is provided. The thin-film solar cell comprises an a-SiGe:H (1.6 eV) n-i-p solar cell having a deposition rate of at least ten (10) .ANG./second for the a-SiGe:H intrinsic layer by hot wire chemical vapor deposition. A method for fabricating a thin film solar cell is also provided. The method comprises depositing a n-i-p layer at a deposition rate of at least ten (10) .ANG./second for the a-SiGe:H intrinsic layer.

Inventors:
;
Issue Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1175951
Patent Number(s):
7,122,736
Application Number:
10/485,715
Assignee:
Midwest Research Institute (Kansas City, MO)
DOE Contract Number:  
AC36-99GO10337
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY

Citation Formats

Wang, Qi, and Iwaniczko, Eugene. Method and apparatus for fabricating a thin-film solar cell utilizing a hot wire chemical vapor deposition technique. United States: N. p., 2006. Web.
Wang, Qi, & Iwaniczko, Eugene. Method and apparatus for fabricating a thin-film solar cell utilizing a hot wire chemical vapor deposition technique. United States.
Wang, Qi, and Iwaniczko, Eugene. Tue . "Method and apparatus for fabricating a thin-film solar cell utilizing a hot wire chemical vapor deposition technique". United States. https://www.osti.gov/servlets/purl/1175951.
@article{osti_1175951,
title = {Method and apparatus for fabricating a thin-film solar cell utilizing a hot wire chemical vapor deposition technique},
author = {Wang, Qi and Iwaniczko, Eugene},
abstractNote = {A thin-film solar cell is provided. The thin-film solar cell comprises an a-SiGe:H (1.6 eV) n-i-p solar cell having a deposition rate of at least ten (10) .ANG./second for the a-SiGe:H intrinsic layer by hot wire chemical vapor deposition. A method for fabricating a thin film solar cell is also provided. The method comprises depositing a n-i-p layer at a deposition rate of at least ten (10) .ANG./second for the a-SiGe:H intrinsic layer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2006},
month = {10}
}

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