Method to control artifacts of microstructural fabrication
Abstract
New methods for fabrication of silicon microstructures have been developed. In these methods, an etching delay layer is deposited and patterned so as to provide differential control on the depth of features being etched into a substrate material. Compensation for etching-related structural artifacts can be accomplished by proper use of such an etching delay layer.
- Inventors:
- Issue Date:
- Research Org.:
- Sandia National Lab. (SNL-CA), Livermore, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1175909
- Patent Number(s):
- 7105098
- Application Number:
- 10/165,356
- Assignee:
- Sandia Corporation
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B81 - MICROSTRUCTURAL TECHNOLOGY B81C - PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 77 NANOSCIENCE AND NANOTECHNOLOGY
Citation Formats
Shul, Randy J., Willison, Christi G., Schubert, W. Kent, Manginell, Ronald P., Mitchell, Mary-Anne, and Galambos, Paul C. Method to control artifacts of microstructural fabrication. United States: N. p., 2006.
Web.
Shul, Randy J., Willison, Christi G., Schubert, W. Kent, Manginell, Ronald P., Mitchell, Mary-Anne, & Galambos, Paul C. Method to control artifacts of microstructural fabrication. United States.
Shul, Randy J., Willison, Christi G., Schubert, W. Kent, Manginell, Ronald P., Mitchell, Mary-Anne, and Galambos, Paul C. Tue .
"Method to control artifacts of microstructural fabrication". United States. https://www.osti.gov/servlets/purl/1175909.
@article{osti_1175909,
title = {Method to control artifacts of microstructural fabrication},
author = {Shul, Randy J. and Willison, Christi G. and Schubert, W. Kent and Manginell, Ronald P. and Mitchell, Mary-Anne and Galambos, Paul C.},
abstractNote = {New methods for fabrication of silicon microstructures have been developed. In these methods, an etching delay layer is deposited and patterned so as to provide differential control on the depth of features being etched into a substrate material. Compensation for etching-related structural artifacts can be accomplished by proper use of such an etching delay layer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2006},
month = {9}
}
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