Photovoltaic healing of non-uniformities in semiconductor devices
Abstract
A method of making a photovoltaic device using light energy and a solution to normalize electric potential variations in the device. A semiconductor layer having nonuniformities comprising areas of aberrant electric potential deviating from the electric potential of the top surface of the semiconductor is deposited onto a substrate layer. A solution containing an electrolyte, at least one bonding material, and positive and negative ions is applied over the top surface of the semiconductor. Light energy is applied to generate photovoltage in the semiconductor, causing a redistribution of the ions and the bonding material to the areas of aberrant electric potential. The bonding material selectively bonds to the nonuniformities in a manner such that the electric potential of the nonuniformities is normalized relative to the electric potential of the top surface of the semiconductor layer. A conductive electrode layer is then deposited over the top surface of the semiconductor layer.
- Inventors:
- Issue Date:
- Research Org.:
- University Of Toledo, Toledo, OH (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1175896
- Patent Number(s):
- 7098058
- Application Number:
- 11/035,170
- Assignee:
- University Of Toledo
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- NERL-NDJ-1-30630-02
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING
Citation Formats
Karpov, Victor G., Roussillon, Yann, Shvydka, Diana, Compaan, Alvin D., and Giolando, Dean M. Photovoltaic healing of non-uniformities in semiconductor devices. United States: N. p., 2006.
Web.
Karpov, Victor G., Roussillon, Yann, Shvydka, Diana, Compaan, Alvin D., & Giolando, Dean M. Photovoltaic healing of non-uniformities in semiconductor devices. United States.
Karpov, Victor G., Roussillon, Yann, Shvydka, Diana, Compaan, Alvin D., and Giolando, Dean M. Tue .
"Photovoltaic healing of non-uniformities in semiconductor devices". United States. https://www.osti.gov/servlets/purl/1175896.
@article{osti_1175896,
title = {Photovoltaic healing of non-uniformities in semiconductor devices},
author = {Karpov, Victor G. and Roussillon, Yann and Shvydka, Diana and Compaan, Alvin D. and Giolando, Dean M.},
abstractNote = {A method of making a photovoltaic device using light energy and a solution to normalize electric potential variations in the device. A semiconductor layer having nonuniformities comprising areas of aberrant electric potential deviating from the electric potential of the top surface of the semiconductor is deposited onto a substrate layer. A solution containing an electrolyte, at least one bonding material, and positive and negative ions is applied over the top surface of the semiconductor. Light energy is applied to generate photovoltage in the semiconductor, causing a redistribution of the ions and the bonding material to the areas of aberrant electric potential. The bonding material selectively bonds to the nonuniformities in a manner such that the electric potential of the nonuniformities is normalized relative to the electric potential of the top surface of the semiconductor layer. A conductive electrode layer is then deposited over the top surface of the semiconductor layer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2006},
month = {8}
}
Works referenced in this record:
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conference, January 2002
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conference, January 2000
- Karpov, V. G.; Harju, R.; Dorer, G.
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