Title: Stacked switchable element and diode combination

Abstract

A device (10) comprises a semiconductor diode (12) and a switchable element (14) positioned in stacked adjacent relationship so that the semiconductor diode (12) and the switchable element (14) are electrically connected in series with one another. The switchable element (14) is switchable from a low-conductance state to a high-conductance state in response to the application of a forming voltage to the switchable element (14).

Inventors:

Branz, Howard M.; Wang, Qi

Issue Date:

2006-06-27

Research Org.:

National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1175810

Patent Number(s):

7067850

Application Number:

10/240,838

Assignee:

Midwest Research Institute (Kansas City, MO)

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L45/1675 - {by etching of pre-deposited switching material layers, e.g. lithography}
H01L45/1233 - {adapted for essentially vertical current flow, e.g. sandwich or pillar type devices}
H01L29/868 - PIN diodes
H01L27/101 - {including resistors or capacitors only}
H01L45/14 - {Selection of switching materials}
H01L27/2409 - {comprising two-terminal selection components, e.g. diodes}
H01L45/085 - {the species being metal cations, e.g. programmable metallization cells}
H01L45/1641 - {Modification of the switching material, e.g. post-treatment, doping}
H01L29/685 - {Hi-Lo semiconductor devices, e.g. memory devices}
H01L45/148 - {Other compounds of groups 13-15, e.g. elemental or compound semiconductors}
H01L45/1266 - {adapted for supplying ionic species}

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DOE Contract Number:  

AC36-99GO10337

Resource Type:

Patent

Country of Publication:

United States

Language:

English

Subject:

42 ENGINEERING