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Title: Lithium-drifted silicon detector with segmented contacts

Abstract

A method and apparatus for creating both segmented and unsegmented radiation detectors which can operate at room temperature. The devices include a metal contact layer, and an n-type blocking contact formed from a thin layer of amorphous semiconductor. In one embodiment the material beneath the n-type contact is n-type material, such as lithium compensated silicon that forms the active region of the device. The active layer has been compensated to a degree at which the device may be fully depleted at low bias voltages. A p-type blocking contact layer, or a p-type donor material can be formed beneath a second metal contact layer to complete the device structure. When the contacts to the device are segmented, the device is capable of position sensitive detection and spectroscopy of ionizing radiation, such as photons, electrons, and ions.

Inventors:
;
Issue Date:
Research Org.:
The Regents of the University of California, Oakland, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1175789
Patent Number(s):
7,060,523
Application Number:
10/845,600
Assignee:
The Regents of the University of California (Oakland, CA)
DOE Contract Number:  
AC03-76SF00098
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY

Citation Formats

Tindall, Craig S., and Luke, Paul N. Lithium-drifted silicon detector with segmented contacts. United States: N. p., 2006. Web.
Tindall, Craig S., & Luke, Paul N. Lithium-drifted silicon detector with segmented contacts. United States.
Tindall, Craig S., and Luke, Paul N. Tue . "Lithium-drifted silicon detector with segmented contacts". United States. https://www.osti.gov/servlets/purl/1175789.
@article{osti_1175789,
title = {Lithium-drifted silicon detector with segmented contacts},
author = {Tindall, Craig S. and Luke, Paul N.},
abstractNote = {A method and apparatus for creating both segmented and unsegmented radiation detectors which can operate at room temperature. The devices include a metal contact layer, and an n-type blocking contact formed from a thin layer of amorphous semiconductor. In one embodiment the material beneath the n-type contact is n-type material, such as lithium compensated silicon that forms the active region of the device. The active layer has been compensated to a degree at which the device may be fully depleted at low bias voltages. A p-type blocking contact layer, or a p-type donor material can be formed beneath a second metal contact layer to complete the device structure. When the contacts to the device are segmented, the device is capable of position sensitive detection and spectroscopy of ionizing radiation, such as photons, electrons, and ions.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2006},
month = {6}
}

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Works referenced in this record:

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Thick silicon strip detectors
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