Narrow energy band gap gallium arsenide nitride semi-conductors and an ion-cut-synthesis method for producing the same

Weng, Xiaojun; Goldman, Rachel S.

Title: Narrow energy band gap gallium arsenide nitride semi-conductors and an ion-cut-synthesis method for producing the same

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Abstract

A method for forming a semi-conductor material is provided that comprises forming a donor substrate constructed of GaAs, providing a receiver substrate, implanting nitrogen into the donor substrate to form an implanted layer comprising GaAs and nitrogen. The implanted layer is bonded to the receiver substrate and annealed to form GaAsN and nitrogen micro-blisters in the implanted layer. The micro-blisters allow the implanted layer to be cleaved from the donor substrate.

Inventors:: Weng, Xiaojun; Goldman, Rachel S.

Issue Date:: 2006-06-06

Research Org.:: Univ. of Michigan, Ann Arbor, MI (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1175777

Patent Number(s):: 7056815

Application Number:: 10/706,737

Assignee:: The Regents of the University of Michigan (Ann Arbor, MI)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L21/76254 - {with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond}
H01L21/2654 - {in AIIIBV compounds}

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Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Weng, Xiaojun, and Goldman, Rachel S. Narrow energy band gap gallium arsenide nitride semi-conductors and an ion-cut-synthesis method for producing the same.  United States: N. p., 2006. 
        Web.

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                    Weng, Xiaojun, & Goldman, Rachel S. Narrow energy band gap gallium arsenide nitride semi-conductors and an ion-cut-synthesis method for producing the same.  United States.

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                    Weng, Xiaojun, and Goldman, Rachel S. Tue .  
        "Narrow energy band gap gallium arsenide nitride semi-conductors and an ion-cut-synthesis method for producing the same".  United States.  https://www.osti.gov/servlets/purl/1175777.

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@article{osti_1175777,

  title        = {Narrow energy band gap gallium arsenide nitride semi-conductors and an ion-cut-synthesis method for producing the same},

  author       = {Weng, Xiaojun and Goldman, Rachel S.},

  abstractNote = {A method for forming a semi-conductor material is provided that comprises forming a donor substrate constructed of GaAs, providing a receiver substrate, implanting nitrogen into the donor substrate to form an implanted layer comprising GaAs and nitrogen. The implanted layer is bonded to the receiver substrate and annealed to form GaAsN and nitrogen micro-blisters in the implanted layer. The micro-blisters allow the implanted layer to be cleaved from the donor substrate.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2006},

  month        = {6}

}

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