EUV lithography reticles fabricated without the use of a patterned absorber

Stearns, Daniel G.; Sweeney, Donald W.; Mirkarimi, Paul B.

Title: EUV lithography reticles fabricated without the use of a patterned absorber

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Abstract

Absorber material used in conventional EUVL reticles is eliminated by introducing a direct modulation in the complex-valued reflectance of the multilayer. A spatially localized energy source such as a focused electron or ion beam directly writes a reticle pattern onto the reflective multilayer coating. Interdiffusion is activated within the film by an energy source that causes the multilayer period to contract in the exposed regions. The contraction is accurately determined by the energy dose. A controllable variation in the phase and amplitude of the reflected field in the reticle plane is produced by the spatial modulation of the multilayer period. This method for patterning an EUVL reticle has the advantages (1) avoiding the process steps associated with depositing and patterning an absorber layer and (2) providing control of the phase and amplitude of the reflected field with high spatial resolution.

Inventors:: Stearns, Daniel G.; Sweeney, Donald W.; Mirkarimi, Paul B.

Issue Date:: 2006-05-23

Research Org.:: The EUV LLC, Santa Clara, CA (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1175748

Patent Number(s):: 7049033

Application Number:: 10/631,359

Assignee:: The EUV LLC (Santa Clara, CA)

Patent Classifications (CPCs):: G - PHYSICS G03 - PHOTOGRAPHY G03F - PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES

B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

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G - PHYSICS G03 - PHOTOGRAPHY G03F - PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES
G03F1/24 - Reflection masks

B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
B82Y40/00 - Manufacture or treatment of nanostructures
B82Y10/00 - Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic

G - PHYSICS G03 - PHOTOGRAPHY G03F - PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES
G03F1/34 - Phase-edge PSM, e.g. chromeless PSM

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DOE Contract Number:: W-7405-ENG-48

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: 42 ENGINEERING

Citation Formats


                    Stearns, Daniel G., Sweeney, Donald W., and Mirkarimi, Paul B. EUV lithography reticles fabricated without the use of a patterned absorber.  United States: N. p., 2006. 
        Web.

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                    Stearns, Daniel G., Sweeney, Donald W., & Mirkarimi, Paul B. EUV lithography reticles fabricated without the use of a patterned absorber.  United States.

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                    Stearns, Daniel G., Sweeney, Donald W., and Mirkarimi, Paul B. Tue .  
        "EUV lithography reticles fabricated without the use of a patterned absorber".  United States.  https://www.osti.gov/servlets/purl/1175748.

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@article{osti_1175748,

  title        = {EUV lithography reticles fabricated without the use of a patterned absorber},

  author       = {Stearns, Daniel G. and Sweeney, Donald W. and Mirkarimi, Paul B.},

  abstractNote = {Absorber material used in conventional EUVL reticles is eliminated by introducing a direct modulation in the complex-valued reflectance of the multilayer. A spatially localized energy source such as a focused electron or ion beam directly writes a reticle pattern onto the reflective multilayer coating. Interdiffusion is activated within the film by an energy source that causes the multilayer period to contract in the exposed regions. The contraction is accurately determined by the energy dose. A controllable variation in the phase and amplitude of the reflected field in the reticle plane is produced by the spatial modulation of the multilayer period. This method for patterning an EUVL reticle has the advantages (1) avoiding the process steps associated with depositing and patterning an absorber layer and (2) providing control of the phase and amplitude of the reflected field with high spatial resolution.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2006},

  month        = {5}

}

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