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Title: Codoped direct-gap semiconductor scintillators

Abstract

Fast, bright inorganic scintillators at room temperature are based on radiative electron-hole recombination in direct-gap semiconductors, e.g. CdS and ZnO. The direct-gap semiconductor is codoped with two different impurity atoms to convert the semiconductor to a fast, high luminosity scintillator. The codopant scheme is based on dopant band to dopant trap recombination. One dopant provides a significant concentration of carriers of one type (electrons or holes) and the other dopant traps carriers of the other type. Examples include CdS:In,Te; CdS:In,Ag; CdS:In,Na; ZnO:Ga,P; ZnO:Ga,N; ZnO:Ga,S; and GaN:Ge,Mg.

Inventors:
; ; ;
Issue Date:
Research Org.:
Univ. of California, Oakland, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1175746
Patent Number(s):
7048872
Assignee:
The Regents of the University of California (Oakland, CA)
Patent Classifications (CPCs):
C - CHEMISTRY C09 - DYES C09K - MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
DOE Contract Number:  
AC03-76SF00098
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION

Citation Formats

Derenzo, Stephen E., Bourret-Courchesne, Edith, Weber, Marvin J., and Klintenberg, Mattias K.. Codoped direct-gap semiconductor scintillators. United States: N. p., 2006. Web.
Derenzo, Stephen E., Bourret-Courchesne, Edith, Weber, Marvin J., & Klintenberg, Mattias K.. Codoped direct-gap semiconductor scintillators. United States.
Derenzo, Stephen E., Bourret-Courchesne, Edith, Weber, Marvin J., and Klintenberg, Mattias K.. Tue . "Codoped direct-gap semiconductor scintillators". United States. https://www.osti.gov/servlets/purl/1175746.
@article{osti_1175746,
title = {Codoped direct-gap semiconductor scintillators},
author = {Derenzo, Stephen E. and Bourret-Courchesne, Edith and Weber, Marvin J. and Klintenberg, Mattias K.},
abstractNote = {Fast, bright inorganic scintillators at room temperature are based on radiative electron-hole recombination in direct-gap semiconductors, e.g. CdS and ZnO. The direct-gap semiconductor is codoped with two different impurity atoms to convert the semiconductor to a fast, high luminosity scintillator. The codopant scheme is based on dopant band to dopant trap recombination. One dopant provides a significant concentration of carriers of one type (electrons or holes) and the other dopant traps carriers of the other type. Examples include CdS:In,Te; CdS:In,Ag; CdS:In,Na; ZnO:Ga,P; ZnO:Ga,N; ZnO:Ga,S; and GaN:Ge,Mg.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2006},
month = {5}
}

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Works referenced in this record:

High Conductivity in Gallium-Doped Zinc Oxide Powders
journal, January 1996


A fast inorganic scintillator
journal, June 1968


Intrinsic n -type versus p -type doping asymmetry and the defect physics of ZnO
journal, January 2001


Donor–acceptor pair transitions in ZnO substrate material
journal, December 2001


Optical Absorption Edges of ZnO and CdS
journal, January 1965


Edge emission of n-type conducting ZnO and CdS
journal, November 1966


Superfast timing performance from ZnO scintillators
journal, June 2003

  • Simpson, P. J.; Tjossem, R.; Hunt, A. W.
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 505, Issue 1-2
  • https://doi.org/10.1016/S0168-9002(03)01025-8