Codoped direct-gap semiconductor scintillators
Abstract
Fast, bright inorganic scintillators at room temperature are based on radiative electron-hole recombination in direct-gap semiconductors, e.g. CdS and ZnO. The direct-gap semiconductor is codoped with two different impurity atoms to convert the semiconductor to a fast, high luminosity scintillator. The codopant scheme is based on dopant band to dopant trap recombination. One dopant provides a significant concentration of carriers of one type (electrons or holes) and the other dopant traps carriers of the other type. Examples include CdS:In,Te; CdS:In,Ag; CdS:In,Na; ZnO:Ga,P; ZnO:Ga,N; ZnO:Ga,S; and GaN:Ge,Mg.
- Inventors:
- Issue Date:
- Research Org.:
- Univ. of California, Oakland, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1175746
- Patent Number(s):
- 7048872
- Assignee:
- The Regents of the University of California (Oakland, CA)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C09 - DYES C09K - MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- DOE Contract Number:
- AC03-76SF00098
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 47 OTHER INSTRUMENTATION
Citation Formats
Derenzo, Stephen E., Bourret-Courchesne, Edith, Weber, Marvin J., and Klintenberg, Mattias K. Codoped direct-gap semiconductor scintillators. United States: N. p., 2006.
Web.
Derenzo, Stephen E., Bourret-Courchesne, Edith, Weber, Marvin J., & Klintenberg, Mattias K. Codoped direct-gap semiconductor scintillators. United States.
Derenzo, Stephen E., Bourret-Courchesne, Edith, Weber, Marvin J., and Klintenberg, Mattias K. Tue .
"Codoped direct-gap semiconductor scintillators". United States. https://www.osti.gov/servlets/purl/1175746.
@article{osti_1175746,
title = {Codoped direct-gap semiconductor scintillators},
author = {Derenzo, Stephen E. and Bourret-Courchesne, Edith and Weber, Marvin J. and Klintenberg, Mattias K.},
abstractNote = {Fast, bright inorganic scintillators at room temperature are based on radiative electron-hole recombination in direct-gap semiconductors, e.g. CdS and ZnO. The direct-gap semiconductor is codoped with two different impurity atoms to convert the semiconductor to a fast, high luminosity scintillator. The codopant scheme is based on dopant band to dopant trap recombination. One dopant provides a significant concentration of carriers of one type (electrons or holes) and the other dopant traps carriers of the other type. Examples include CdS:In,Te; CdS:In,Ag; CdS:In,Na; ZnO:Ga,P; ZnO:Ga,N; ZnO:Ga,S; and GaN:Ge,Mg.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2006},
month = {5}
}
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