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Title: Electric field induced spin-polarized current

Abstract

A device and a method for generating an electric-field-induced spin current are disclosed. A highly spin-polarized electric current is generated using a semiconductor structure and an applied electric field across the semiconductor structure. The semiconductor structure can be a hole-doped semiconductor having finite or zero bandgap or an undoped semiconductor of zero bandgap. In one embodiment, a device for injecting spin-polarized current into a current output terminal includes a semiconductor structure including first and second electrodes, along a first axis, receiving an applied electric field and a third electrode, along a direction perpendicular to the first axis, providing the spin-polarized current. The semiconductor structure includes a semiconductor material whose spin orbit coupling energy is greater than room temperature (300 Kelvin) times the Boltzmann constant. In one embodiment, the semiconductor structure is a hole-doped semiconductor structure, such as a p-type GaAs semiconductor layer.

Inventors:
; ;
Issue Date:
Research Org.:
Stanford Univ., CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1175728
Patent Number(s):
7037807
Application Number:
10/746,050
Assignee:
The Board of Trustees of the Leland Stanford Junior University
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
AC03-76SF00515
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION

Citation Formats

Murakami, Shuichi, Nagaosa, Naoto, and Zhang, Shoucheng. Electric field induced spin-polarized current. United States: N. p., 2006. Web.
Murakami, Shuichi, Nagaosa, Naoto, & Zhang, Shoucheng. Electric field induced spin-polarized current. United States.
Murakami, Shuichi, Nagaosa, Naoto, and Zhang, Shoucheng. Tue . "Electric field induced spin-polarized current". United States. https://www.osti.gov/servlets/purl/1175728.
@article{osti_1175728,
title = {Electric field induced spin-polarized current},
author = {Murakami, Shuichi and Nagaosa, Naoto and Zhang, Shoucheng},
abstractNote = {A device and a method for generating an electric-field-induced spin current are disclosed. A highly spin-polarized electric current is generated using a semiconductor structure and an applied electric field across the semiconductor structure. The semiconductor structure can be a hole-doped semiconductor having finite or zero bandgap or an undoped semiconductor of zero bandgap. In one embodiment, a device for injecting spin-polarized current into a current output terminal includes a semiconductor structure including first and second electrodes, along a first axis, receiving an applied electric field and a third electrode, along a direction perpendicular to the first axis, providing the spin-polarized current. The semiconductor structure includes a semiconductor material whose spin orbit coupling energy is greater than room temperature (300 Kelvin) times the Boltzmann constant. In one embodiment, the semiconductor structure is a hole-doped semiconductor structure, such as a p-type GaAs semiconductor layer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2006},
month = {5}
}

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Works referenced in this record:

Universal Intrinsic Spin Hall Effect
journal, March 2004


Hall-Like Effect Induced by Spin-Orbit Interaction
journal, July 1999


Spin Hall Effect in the Presence of Spin Diffusion
journal, July 2000


Electrical spin injection in a ferromagnetic semiconductor heterostructure
journal, December 1999


Spin Hall Effect
journal, August 1999


Dissipationless Quantum Spin Current at Room Temperature
journal, September 2003