Electric field induced spin-polarized current
Abstract
A device and a method for generating an electric-field-induced spin current are disclosed. A highly spin-polarized electric current is generated using a semiconductor structure and an applied electric field across the semiconductor structure. The semiconductor structure can be a hole-doped semiconductor having finite or zero bandgap or an undoped semiconductor of zero bandgap. In one embodiment, a device for injecting spin-polarized current into a current output terminal includes a semiconductor structure including first and second electrodes, along a first axis, receiving an applied electric field and a third electrode, along a direction perpendicular to the first axis, providing the spin-polarized current. The semiconductor structure includes a semiconductor material whose spin orbit coupling energy is greater than room temperature (300 Kelvin) times the Boltzmann constant. In one embodiment, the semiconductor structure is a hole-doped semiconductor structure, such as a p-type GaAs semiconductor layer.
- Inventors:
- Issue Date:
- Research Org.:
- Stanford Univ., CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1175728
- Patent Number(s):
- 7037807
- Application Number:
- 10/746,050
- Assignee:
- The Board of Trustees of the Leland Stanford Junior University
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC03-76SF00515
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 47 OTHER INSTRUMENTATION
Citation Formats
Murakami, Shuichi, Nagaosa, Naoto, and Zhang, Shoucheng. Electric field induced spin-polarized current. United States: N. p., 2006.
Web.
Murakami, Shuichi, Nagaosa, Naoto, & Zhang, Shoucheng. Electric field induced spin-polarized current. United States.
Murakami, Shuichi, Nagaosa, Naoto, and Zhang, Shoucheng. Tue .
"Electric field induced spin-polarized current". United States. https://www.osti.gov/servlets/purl/1175728.
@article{osti_1175728,
title = {Electric field induced spin-polarized current},
author = {Murakami, Shuichi and Nagaosa, Naoto and Zhang, Shoucheng},
abstractNote = {A device and a method for generating an electric-field-induced spin current are disclosed. A highly spin-polarized electric current is generated using a semiconductor structure and an applied electric field across the semiconductor structure. The semiconductor structure can be a hole-doped semiconductor having finite or zero bandgap or an undoped semiconductor of zero bandgap. In one embodiment, a device for injecting spin-polarized current into a current output terminal includes a semiconductor structure including first and second electrodes, along a first axis, receiving an applied electric field and a third electrode, along a direction perpendicular to the first axis, providing the spin-polarized current. The semiconductor structure includes a semiconductor material whose spin orbit coupling energy is greater than room temperature (300 Kelvin) times the Boltzmann constant. In one embodiment, the semiconductor structure is a hole-doped semiconductor structure, such as a p-type GaAs semiconductor layer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2006},
month = {5}
}
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