Epitaxial thin films
Abstract
Epitatial thin films for use as buffer layers for high temperature superconductors, electrolytes in solid oxide fuel cells (SOFC), gas separation membranes or dielectric material in electronic devices, are disclosed. By using CCVD, CACVD or any other suitable deposition process, epitaxial films having pore-free, ideal grain boundaries, and dense structure can be formed. Several different types of materials are disclosed for use as buffer layers in high temperature superconductors. In addition, the use of epitaxial thin films for electrolytes and electrode formation in SOFCs results in densification for pore-free and ideal gain boundary/interface microstructure. Gas separation membranes for the production of oxygen and hydrogen are also disclosed. These semipermeable membranes are formed by high-quality, dense, gas-tight, pinhole free sub-micro scale layers of mixed-conducting oxides on porous ceramic substrates. Epitaxial thin films as dielectric material in capacitors are also taught herein. Capacitors are utilized according to their capacitance values which are dependent on their physical structure and dielectric permittivity. The epitaxial thin films of the current invention form low-loss dielectric layers with extremely high permittivity. This high permittivity allows for the formation of capacitors that can have their capacitance adjusted by applying a DC bias between their electrodes.
- Inventors:
- Issue Date:
- Research Org.:
- MicroCoating Technologies, Inc., Atlanta, GA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1175722
- Patent Number(s):
- 7033637
- Application Number:
- 09/889,237
- Assignee:
- MicroCoating Technologies, Inc. (Atlanta, GA)
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B01 - PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL B01D - SEPARATION
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
- DOE Contract Number:
- FG02-97ER82345
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Hunt, Andrew Tye, Deshpande, Girish, Lin, Wen-Yi, and Jan, Tzyy-Jiuan. Epitaxial thin films. United States: N. p., 2006.
Web.
Hunt, Andrew Tye, Deshpande, Girish, Lin, Wen-Yi, & Jan, Tzyy-Jiuan. Epitaxial thin films. United States.
Hunt, Andrew Tye, Deshpande, Girish, Lin, Wen-Yi, and Jan, Tzyy-Jiuan. Tue .
"Epitaxial thin films". United States. https://www.osti.gov/servlets/purl/1175722.
@article{osti_1175722,
title = {Epitaxial thin films},
author = {Hunt, Andrew Tye and Deshpande, Girish and Lin, Wen-Yi and Jan, Tzyy-Jiuan},
abstractNote = {Epitatial thin films for use as buffer layers for high temperature superconductors, electrolytes in solid oxide fuel cells (SOFC), gas separation membranes or dielectric material in electronic devices, are disclosed. By using CCVD, CACVD or any other suitable deposition process, epitaxial films having pore-free, ideal grain boundaries, and dense structure can be formed. Several different types of materials are disclosed for use as buffer layers in high temperature superconductors. In addition, the use of epitaxial thin films for electrolytes and electrode formation in SOFCs results in densification for pore-free and ideal gain boundary/interface microstructure. Gas separation membranes for the production of oxygen and hydrogen are also disclosed. These semipermeable membranes are formed by high-quality, dense, gas-tight, pinhole free sub-micro scale layers of mixed-conducting oxides on porous ceramic substrates. Epitaxial thin films as dielectric material in capacitors are also taught herein. Capacitors are utilized according to their capacitance values which are dependent on their physical structure and dielectric permittivity. The epitaxial thin films of the current invention form low-loss dielectric layers with extremely high permittivity. This high permittivity allows for the formation of capacitors that can have their capacitance adjusted by applying a DC bias between their electrodes.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2006},
month = {4}
}