Processing materials inside an atmospheric-pressure radiofrequency nonthermal plasma discharge
Abstract
Apparatus for the processing of materials involving placing a material either placed between an radio-frequency electrode and a ground electrode, or which is itself one of the electrodes. This is done in atmospheric pressure conditions. The apparatus effectively etches or cleans substrates, such as silicon wafers, or provides cleaning of spools and drums, and uses a gas containing an inert gas and a chemically reactive gas.
- Inventors:
- Issue Date:
- Research Org.:
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1175695
- Patent Number(s):
- 7025856
- Application Number:
- 09/776,086
- Assignee:
- The Regents of the University of California (Los Alamos, NM)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01J - ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- W-7405-ENG-36
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Selwyn, Gary S., Henins, Ivars, Park, Jaeyoung, and Herrmann, Hans W. Processing materials inside an atmospheric-pressure radiofrequency nonthermal plasma discharge. United States: N. p., 2006.
Web.
Selwyn, Gary S., Henins, Ivars, Park, Jaeyoung, & Herrmann, Hans W. Processing materials inside an atmospheric-pressure radiofrequency nonthermal plasma discharge. United States.
Selwyn, Gary S., Henins, Ivars, Park, Jaeyoung, and Herrmann, Hans W. Tue .
"Processing materials inside an atmospheric-pressure radiofrequency nonthermal plasma discharge". United States. https://www.osti.gov/servlets/purl/1175695.
@article{osti_1175695,
title = {Processing materials inside an atmospheric-pressure radiofrequency nonthermal plasma discharge},
author = {Selwyn, Gary S. and Henins, Ivars and Park, Jaeyoung and Herrmann, Hans W.},
abstractNote = {Apparatus for the processing of materials involving placing a material either placed between an radio-frequency electrode and a ground electrode, or which is itself one of the electrodes. This is done in atmospheric pressure conditions. The apparatus effectively etches or cleans substrates, such as silicon wafers, or provides cleaning of spools and drums, and uses a gas containing an inert gas and a chemically reactive gas.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2006},
month = {4}
}
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